公开(公告)号：KR101363760B1

公开(公告)日：2014-02-18

申请号：KR1020120117717

申请日：2012-10-23

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  권준혁 ,  장삼석 ,  이도한 ,  김상일

IPC: H01L21/20

Abstract: A single crystalline substrate structure includes a single crystalline substrate, a gallium nitride layer formed on the single crystalline substrate including a carbonized nitride layer. Therefore, the gallium nitride layer can be formed by using the carbonize nitride layer pattern as a mask and by inducing the lateral growth of the gallium nitride layer.

Abstract translation: 单晶衬底结构包括单晶衬底，在包含碳化氮化物层的单晶衬底上形成的氮化镓层。 因此，可以通过使用碳化氮化物层图案作为掩模并且通过诱导氮化镓层的横向生长来形成氮化镓层。