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    자동화건축의 가설시스템 및 이를 이용한 자동화 건축방법
    4.
    发明公开
    자동화건축의 가설시스템 및 이를 이용한 자동화 건축방법 有权
    建筑工程自动化建设系统及使用方法的施工方法

    公开(公告)号：KR1020100002643A

    公开(公告)日：2010-01-07

    申请号：KR1020080062610

    申请日：2008-06-30

    Applicant: 주식회사 씨에스구조엔지니어링 ,  두산건설 주식회사 ,  고려대학교 산학협력단

    Inventor： 박형석 ,  권도형 ,  이보형 ,  강경인 ,  안성훈 ,  김대원

    IPC: B66C23/26 ,  E04G3/20

    CPC classification number: B66C23/26 ,  B66C23/208 ,  B66C2700/012

    Abstract: PURPOSE: A temporary construction system of automatic construction and an automatic construction method using the same are provided to position a working robot on every corner of constructed parts by simplifying the whole structure. CONSTITUTION: A temporary construction system of automatic construction comprises a rail coupler(120), a roof support frame(130), a vertical support frame(140), a lower reinforcement support frame(145), a first horizontal track rail(160a), and a second horizontal track rail(160b). The rail coupler is coupled on the vertical rail to be slid. One end of the roof support fame is installed on the upper part of the rail coupler. The vertical support frame is coupled on the roof support frame downward. The lower reinforce support frame is installed on the lower part of the vertical support frame. The first horizontal track rail is formed at the lower part of the rail coupler.

    Abstract translation: 目的：通过简化整体结构，提供了一种自动施工的临时施工系统和使用该施工方法的自动施工方法，用于将工件机器人定位在构造部件的每个角落。 构造：自动构造的临时构造系统包括轨道耦合器（120），屋顶支撑框架（130），垂直支撑框架（140），下部加强支撑框架（145），第一水平轨道轨道（160a） ，和第二水平轨道轨道（160b）。 轨道耦合器耦合在垂直导轨上以便滑动。 屋顶支撑架的一端安装在导轨联接器的上部。 垂直支撑框架向下连接在屋顶支撑架上。 下加强支撑框架安装在垂直支撑框架的下部。 第一个水平轨道轨道形成在轨道耦合器的下部。

    리그노셀룰로스의 전처리 방법에 따른 최적 당화효소 혼합물 및 이의 제조방법
    6.
    发明公开
    리그노셀룰로스의 전처리 방법에 따른 최적 당화효소 혼합물 및 이의 제조방법 有权
    优化用于差异预处理的纤维素的纤维素混合物及其制备方法

    公开(公告)号：KR1020160005870A

    公开(公告)日：2016-01-18

    申请号：KR1020140084739

    申请日：2014-07-07

    Applicant: 고려대학교 산학협력단

    Inventor： 김경헌 ,  김인정 ,  정주연 ,  박형석 ,  이희진

    IPC: C12N9/00

    CPC classification number: C12P19/14 ,  C12N9/00

    Abstract: 본발명은리그노셀룰로스의전처리방법에따른최적당화효소혼합물및 이의제조방법에관한것으로, 산또는알칼리전처리된셀룰로스계바이오매스에대하여당화에사용하는효소칵테일의적절한조성과혼합비율을제어하여당화율을개선하는효과가있다.

    Abstract translation: 本发明涉及一种根据木质纤维素预处理方法的最佳磺化酶混合物及其制备方法。 混合物和方法通过控制混合速率和适合于用于糖化的酶混合物的组合物相对于酸或碱预处理的基于纤维素的生物质而具有改善糖化速率的效果。 用于糖化木质纤维素的组合物包含与来自酿酒酵母降解体的内切葡聚糖酶，来自Thermobifida fusca的纤维二糖水解酶和源自Saccharophagus降解物的内切木聚糖酶混合的酶混合物，涉及源自黑曲霉的β-葡糖苷酶。

    자동화 건축 시스템 건설공장의 수평이동레일의 추락방지장치
    7.
    发明公开
    자동화 건축 시스템 건설공장의 수평이동레일의 추락방지장치 无效
    自动建筑施工厂移动轨道的落后预防系统

    公开(公告)号：KR1020130015861A

    公开(公告)日：2013-02-14

    申请号：KR1020110078157

    申请日：2011-08-05

    Applicant: 주식회사 씨에스구조엔지니어링 ,  두산건설 주식회사 ,  고려대학교 산학협력단

    Inventor： 박형석 ,  이보형 ,  조훈희 ,  김동인

    IPC: E04G21/14 ,  B65G35/06 ,  B61B13/00

    CPC classification number: E04G21/16 ,  B65G35/06

    Abstract: PURPOSE: The fall prevention device of a horizontal movement rail in a construction factory of an automation architecture system is provided to absorb a micrometric displacement according to up and down movement of the construction factory or a vibration, to comprise a horizontal movement rail to hang on the frame, and to prevent the fall of the horizontal movement rail. CONSTITUTION: The fall prevention device of a horizontal movement rail in a construction factory of an automation architecture system comprises a upper bracket(10), a lower bracket(20), a shock absorber(30), and a connecting bar(40). The upper bracket is mounted at the bottom surface of a frame(1). The lower bracket is mounted at the upper side of a horizontal movement rail(2). The shock absorber is mounted at the upper bracket. The upper part of the connecting bar is connected to the shock absorber and the lower part is detachably combined in the lower bracket.

    Abstract translation: 目的：提供一种自动化建筑系统建筑工厂水平运动轨道的防坠落装置，用于根据施工厂的上下移动或振动吸收微量位移，包括水平移动导轨，以悬挂 框架，并防止水平运动轨道的跌落。 构成：自动化架构系统的建筑工厂的水平运动轨道的防坠落装置包括上支架（10），下支架（20），减震器（30）和连接杆（40）。 上支架安装在框架（1）的底面。 下支架安装在水平运动导轨（2）的上侧。 减震器安装在上支架上。 连接杆的上部连接到减震器，下部可拆卸地组合在下支架中。

    다중 게이트를 적용한 절연 게이트 바이폴라 트랜지스터 및그 제조 방법
    8.
    发明授权
    다중 게이트를 적용한 절연 게이트 바이폴라 트랜지스터 및그 제조 방법 失效
    다중게이트를적용한절연게이트바이폴라트랜스스터및그제조방

    公开(公告)号：KR100744845B1

    公开(公告)日：2007-08-01

    申请号：KR1020060068375

    申请日：2006-07-21

    Applicant: 고려대학교 산학협력단

    Inventor： 성만영 ,  이한신 ,  박형석

    IPC: H01L29/73

    Abstract: An insulated gate bipolar transistor having multiple gates and a method for manufacturing the same are provided to improve a latch up characteristic by removing a hole current path through a trench process and forming then a gate. A first polycrystal silicon gate(210) is formed in a center portion of a cell, and a second polycrystal silicon gate is formed on a sidewall of the edge of the cell. A first electrode(220) of conductor is formed between the first polycrystal silicon gate and the second polycrystal silicon gate. A second electrode(230) made of conductor is formed adjacent to the second polycrystal silicon gate. The first polycrystal silicon gate penetrates an N-type region and a P-type region.

    Abstract translation: 提供具有多个栅极的绝缘栅双极晶体管及其制造方法，以通过去除通过沟槽工艺的空穴电流路径并形成栅极来提高闩锁特性。 第一多晶硅栅极（210）形成在单元的中心部分中，第二多晶硅栅极形成在单元边缘的侧壁上。 在第一多晶硅栅极和第二多晶硅栅极之间形成导体的第一电极（220）。 由导体制成的第二电极（230）与第二多晶硅栅极相邻地形成。 第一多晶硅栅极穿透N型区域和P型区域。

    다중 트렌치를 적용한 절연 게이트 바이폴라 트랜지스터 및그 제조 방법
    9.
    发明授权
    다중 트렌치를 적용한 절연 게이트 바이폴라 트랜지스터 및그 제조 방법 失效
    다중트렌치를적용한절연게이트바이폴라트랜스스터및그제조방

    公开(公告)号：KR100742779B1

    公开(公告)日：2007-07-26

    申请号：KR1020060068369

    申请日：2006-07-21

    Applicant: 고려대학교 산학협력단

    Inventor： 성만영 ,  이한신 ,  박형석

    IPC: H01L29/70

    Abstract: An insulated gate bipolar transistor using a multiple trench is provided to improve a latch-up characteristic by forming an oxide layer after a portion of a bipolar transistor in which a hole current path is formed is removed by a trench process. A polysilicon gate(220) is formed in the center of a cell in one cell pitch. A trench-type insulation region(210) is formed of the sidewall on the edge of the cell. An electrode(230) is formed between the polysilicon gate and the trench-type insulation region, made of a conductor. The polysilicon gate can have such a depth as to penetrate N-type and P-type regions of a high density and reach an N-type region of a low density.

    Abstract translation: 提供使用多沟槽的绝缘栅双极晶体管，以通过沟槽工艺去除在其中形成有空穴电流路径的双极晶体管的一部分之后形成氧化物层来提高闩锁特性。 多晶硅栅极（220）以一个单元间距形成在单元的中央。 沟槽型绝缘区域（210）由单元边缘上的侧壁形成。 在多晶硅栅极和由导体制成的沟槽型绝缘区域之间形成电极（230）。 多晶硅栅极可以具有穿透高密度的N型区域和P型区域并且达到低密度的N型区域的深度。

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