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公开(公告)号：KR1020140000634A
公开(公告)日：2014-01-03
申请号：KR1020130070193
申请日：2013-06-19
Applicant: 엘지이노텍 주식회사 , 고려대학교 산학협력단
CPC classification number: H01L33/10 , H01L33/007 , H01L33/32
Abstract: Disclosed are a method for manufacturing a light emitting diode including a reflective film by using an intermediate layer and the light emitting diode manufactured by the same method. The method for manufacturing the light emitting diode is for manufacturing the light emitting diode including a reflective layer for reflecting the light generated at an active layer positioned between an n-type semiconductor layer and a p-type semiconductor layer, comprising: a step of forming a first reflective film layer; a step of forming an intermediate layer on the first reflective film layer wherein the intermediate layer is formed by components different from those of the first reflective film layer; and a second reflective film layer formed on the intermediate layer. The intermediate layer is made of a metal component diffused into the second reflective film layer at heat treatment. If the intermediate layer made of the metal component diffused into the reflective film layer is inserted into the reflective film layers, thermal stability of the reflective film can be enhanced. [Reference numerals] (110) First reflective film layer; (120) Intermediate layer; (130) Second reflective film layer; (200) Semiconductor layer
Abstract translation: 公开了通过使用中间层制造包括反射膜的发光二极管和通过相同方法制造的发光二极管的方法。 制造发光二极管的方法是用于制造包括用于反射在位于n型半导体层和p型半导体层之间的有源层产生的光的反射层的发光二极管，包括：形成步骤 第一反射膜层; 在第一反射膜层上形成中间层的步骤，其中中间层由与第一反射膜层不同的成分形成; 以及形成在中间层上的第二反射膜层。 中间层由在热处理时扩散到第二反射膜层中的金属成分制成。 如果将扩散到反射膜层中的金属成分制成的中间层插入到反射膜层中，则可以提高反射膜的热稳定性。 （附图标记）（110）第一反射膜层; （120）中间层; （130）第二反射膜层; （200）半导体层
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2.发明公开내부 반사막을 갖는 패턴사파이어 기판을 이용한 갈륨 질화물층을 포함하는 LED 및 내부 반사막을 갖는 패턴사파이어 기판의 제조방법 有权使用具有内部反射层的图案化的SAPPHIRE基板的光电装置及其制造方法
公开(公告)号：KR1020130085278A
公开(公告)日：2013-07-29
申请号：KR1020120006324
申请日：2012-01-19
Applicant: 고려대학교 산학협력단
CPC classification number: H01L33/10 , H01L33/007 , H01L33/0079 , H01L33/22
Abstract: PURPOSE: A LED which has a gallium nitride layer capable of using a pattern sapphire substrate having an internal reflection film and a manufacturing method of the pattern sapphire substrate having the internal reflection film are provided to form the pattern sapphire substrate automatically by the reflection film, thereby enhancing the processing efficiency. CONSTITUTION: A reflection film is laminated on a sapphire substrate. The laminated reflection film is etched. An aluminum layer is laminated on the etched reflection film. The aluminum is oxidized. [Reference numerals] (AA,CC,FF,II,JJ,KK) Sapphire; (BB,EE) Reflection film; (DD) Etching; (GG) Metalizing; (HH) Aluminium
Abstract translation: 目的：提供具有能够使用具有内反射膜的图案蓝宝石衬底的氮化镓层和具有内反射膜的图案蓝宝石衬底的制造方法的LED，以通过反射膜自动形成图案蓝宝石衬底， 从而提高加工效率。 构成：将反射膜层压在蓝宝石衬底上。 蚀刻层叠反射膜。 在蚀刻的反射膜上层叠铝层。 铝被氧化。 （AA，CC，FF，II，JJ，KK）蓝宝石; （BB，EE）反射膜; （DD）蚀刻; （GG）金属化; （HH）铝
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公开(公告)号：KR1020120052790A
公开(公告)日：2012-05-24
申请号：KR1020100114098
申请日：2010-11-16
Applicant: 고려대학교 산학협력단
IPC: H01L33/32
CPC classification number: H01L33/14 , H01L33/007 , H01L33/06 , H01L33/32 , H01L2933/0016
Abstract: PURPOSE: A group III N type nitride based semiconductor device and a manufacturing method thereof are provided to maintain an ohmic property in a thermal process by irradiating an electrode structure with laser to secure a thermal stability. CONSTITUTION: A nitride based active layer(30) is formed on an n type nitride clad layer(20). A p type nitride clad layer(40) is formed on the nitride based active layer. An ohmic contact electrode structure(50) is formed on the p type nitride based clad layer. A support substrate(60) is formed on the ohmic contact electrode structure. An electrode structure(80) is formed on the rear of the n type nitride based clad layer.
Abstract translation: 目的：提供III族N型氮化物基半导体器件及其制造方法，以通过用激光照射电极结构来保持热稳定性来保持热处理中的欧姆特性。 构成：在n型氮化物覆层（20）上形成氮化物基有源层（30）。 在氮化物基活性层上形成p型氮化物覆层（40）。 在p型氮化物基覆盖层上形成欧姆接触电极结构（50）。 支撑衬底（60）形成在欧姆接触电极结构上。 电极结构（80）形成在n型氮化物基覆层的后部。
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公开(公告)号：KR101294246B1
公开(公告)日：2013-08-07
申请号：KR1020120067148
申请日：2012-06-22
Applicant: 엘지이노텍 주식회사 , 고려대학교 산학협력단
IPC: H01L33/46
CPC classification number: H01L33/10 , H01L33/0075 , H01L33/32
Abstract: PURPOSE: A method for manufacturing a light emitting diode having a reflective layer using a middle layer, and the light emitting diode are provided to improve thermal stability by preventing the agglomeration of an Ag based reflection layer. CONSTITUTION: An active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer. A reflection layer reflects the light generated from the active layer. A first reflection layer (110) is formed. A middle layer (120) is formed on the first reflection layer. A second reflection layer (130) is formed on the middle layer. [Reference numerals] (110) First reflection layer; (120) Middle layer; (130) Second reflection layer; (200) Semiconductor layer
Abstract translation: 目的：提供一种制造具有使用中间层的反射层的发光二极管的方法和发光二极管，以通过防止Ag基反射层的聚集来提高热稳定性。 构成：在n型半导体层和p型半导体层之间形成有源层。 反射层反射从有源层产生的光。 形成第一反射层（110）。 在第一反射层上形成中间层（120）。 第二反射层（130）形成在中间层上。 （附图标记）（110）第一反射层; （120）中层; （130）第二反射层; （200）半导体层
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公开(公告)号：KR101188915B1
公开(公告)日：2012-10-09
申请号：KR1020100114098
申请日：2010-11-16
Applicant: 고려대학교 산학협력단
IPC: H01L33/32
Abstract: 본 발명에서는 Ⅲ족 n형 질화물계 반도체 소자에 있어서, 상기 반도체 소자의 n형 질화물계 클래드층에 질화물층이 형성된 구조를 포함하는 것을 특징으로 하는 Ⅲ족 n형 질화물계 반도체 소자가 개시된다. 본 발명의 일 실시예에 따른 Ⅲ족 n형 질화물계 반도체 소자 및 이를 포함하는 발광다이오드 소자는, 레이저 조사에 의해 n형 질화물계 클래드층의 질소가 빠져나오면서 질화물층이 형성되고 n형 질화물계 클래드층에 질소공공(N vacancy)이 형성됨으로써 n형 질화물계 클래드층 표면의 캐리어 농도의 증가로 인한 터널링 현상에 의해 전류이동이 원활해질 뿐만 아니라, 열적 안정성을 확보하여 오믹특성을 유지할 수 있는 장점을 가진다. 따라서, 본 발명에 따르면 전기적 또는 열적 안정성이 향상된 Ⅲ족 n형 질화물계 반도체 소자 및 이를 포함하는 발광다이오드 소자를 사용할 수 있다는 장점이 있다.
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Patent Agency Ranking
公开(公告)号：KR101328416B1
公开(公告)日：2013-11-14
申请号：KR1020120071752
申请日：2012-07-02
Applicant: 고려대학교 산학협력단
IPC: H01L31/0224 , G02F1/1343 , H01L29/40
CPC classification number: H01L31/022466 , G02F1/1343 , H01L31/0392 , H01L31/1884 , H01L33/42 , H01L51/5203
Abstract: The present invention relates to a semiconductor device with a clear electrode and a manufacturing method thereof. The semiconductor with the clear electrode comprises a lower nitride layer, a metal layer formed on the nitride layer, and an upper nitride layer formed on the metal layer. As the metal layer is formed between the nitride layers, the clear electrode is manufactured with excellent property without rare-earth elements. [Reference numerals] (110) Lower nitride layer;(120) Metal layer;(130) Upper nitride layer
Abstract translation: 本发明涉及具有透明电极的半导体器件及其制造方法。 具有透明电极的半导体包括下氮化物层，形成在氮化物层上的金属层和形成在金属层上的上部氮化物层。 由于金属层形成在氮化物层之间，所以透明电极被制造成具有优异的性能而没有稀土元素。 （110）下氮化物层;（120）金属层;（130）上部氮化物层
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公开(公告)号：KR1020130119616A
公开(公告)日：2013-11-01
申请号：KR1020120042550
申请日：2012-04-24
Applicant: 엘지이노텍 주식회사 , 고려대학교 산학협력단
CPC classification number: H01L33/14 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/42
Abstract: A light emitting device includes a first conductivity type semiconductor layer under an active layer, a second conductivity type semiconductor layer arranged on the active layer, a transparent conduction layer arranged on the second conductivity type semiconductor layer, and a current spreading layer arranged between the second conductivity type semiconductor layer and the transparent conduction layer. The current spreading layer includes lines that are separated from each other.
Abstract translation: 发光器件包括有源层下的第一导电类型半导体层，布置在有源层上的第二导电类型半导体层，布置在第二导电类型半导体层上的透明导电层，以及布置在第二导电类型半导体层之间的电流扩散层 导电型半导体层和透明导电层。 电流扩展层包括彼此分离的线。
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公开(公告)号：KR101004868B1
公开(公告)日：2010-12-28
申请号：KR1020080128876
申请日：2008-12-17
Applicant: 삼성엘이디 주식회사 , 고려대학교 산학협력단
Abstract: 본 발명은 질화물 반도체 발광소자 및 그 제조방법에 관한 것으로서, 본 발명은, 도전성 기판; 상기 도전성 기판 상에 순차적으로 형성된 p형 질화물 반도체층, 활성층 및 n형 질화물 반도체층을 구비하는 발광적층체; 상기 n형 질화물 반도체층 상에 형성된 페시베이션층; 및 상기 페시베이션층 상에 형성된 n형 오믹 전극;을 포함하며, 상기 페시베이션층은 상기 n형 오믹 전극과 오믹컨택을 이루는 도전성 물질로 이루어진 질화물 반도체 발광소자를 제공함으로써, 열처리 공정을 거치지 않더라도 열적으로 안정하며 전기적 특성이 우수한 n형 오믹 전극을 형성할 수 있다. 또한, 본 발명에 따르면, 상기와 같은 우수한 열적·전기적 특성을 나타내기 위한 최적화된 질화물 반도체 발광소자의 제조방법을 제공한다.
발광소자, 오믹컨택, 셀레늄, 페시베이션, 표면처리-
公开(公告)号：KR1020100070242A
公开(公告)日：2010-06-25
申请号：KR1020080128876
申请日：2008-12-17
Applicant: 삼성엘이디 주식회사 , 고려대학교 산학협력단
Abstract: PURPOSE: A nitride semiconductor light emitting diode and a manufacturing method thereof equipped with an N-type ohmic electrode are provided to improve electrical characteristic by forming the N-type ohmic electrode in electron beam evaporation. CONSTITUTION: An emitting lamination material equips a p-type nitride semiconductor layer and n-type nitride semiconductor layer on a conductive substrate. A passivation layer(260) is formed on the n-type nitride semiconductor layer. An n-type ohmic electrode(270) is formed on the passivation layer. The passivation layer is included of the conductive material accomplishing the n-type ohmic electrode and ohmic contact.
Abstract translation: 目的：提供一种氮化物半导体发光二极管及其配备有N型欧姆电极的制造方法，以通过在电子束蒸发中形成N型欧姆电极来提高电气特性。 构成：发光层压材料配备导电性基板上的p型氮化物半导体层和n型氮化物半导体层。 钝化层（260）形成在n型氮化物半导体层上。 在钝化层上形成n型欧姆电极（270）。 包括实现n型欧姆电极和欧姆接触的导电材料的钝化层。
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公开(公告)号：KR1020090003446A
公开(公告)日：2009-01-12
申请号：KR1020070056871
申请日：2007-06-11
Applicant: 고려대학교 산학협력단
IPC: H01L33/12
Abstract: The vertical type nitride semiconductor light-emitting device and manufacturing method thereof are provided to use the ohmic electrode material suitable for the gallium polarity. The vertical type nitride semiconductor light-emitting device has N type supporting material layer(230), N type reflective film ohmic contact layer(220), N type GaN cladding layer(210), active layer(240), P-type GaN cladding layer(260) and the P-type transparency ohmic contact layer(270). The In-doped GaN (GaN) buffer layer(250) is formed between the active layer and P-type GaN cladding layer. The P-type GaN cladding layer growing in the In -doped gallium nitride buffer layer has the opposite surface to the P-type transparency ohmic contact layer having the gallium polarity. The In-doped thickness of the gallium nitride buffer layer is about 50~250 nm.
Abstract translation: 提供垂直型氮化物半导体发光器件及其制造方法来使用适用于镓极性的欧姆电极材料。 垂直型氮化物半导体发光器件具有N型支撑材料层（230），N型反射膜欧姆接触层（220），N型GaN覆层（210），有源层（240），P型GaN覆层 层（260）和P型透明欧姆接触层（270）。 In有源GaN（GaN）缓冲层（250）形成在有源层和P型GaN包覆层之间。 在掺杂氮化镓缓冲层中生长的P型GaN覆层具有与具有镓极性的P型透明欧姆接触层相反的表面。 氮化镓缓冲层的In掺杂厚度约为50〜250nm。
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