公开(公告)号：KR1020100119428A

公开(公告)日：2010-11-09

申请号：KR1020090038534

申请日：2009-04-30

Applicant: 국민대학교산학협력단

Inventor： 이장식 ,  손병혁 ,  김용무 ,  권정화 ,  신현정 ,  이재갑

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/792 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L29/517

Abstract: PURPOSE: A charge storage layer, a forming method thereof, a nonvolatile memory device thereof, and a manufacturing method thereof are provided to easily control the density and size of the charge storage layer of a nonvolatile memory device. CONSTITUTION: A tunneling oxide film(11) is formed on the semiconductor substrate. The charge storage layer is discontinuously formed on the tunneling oxide film and includes at least two dissimilar metal nano crystals. A control oxide film(13) is formed on the metal nano crystal of the charge storage layer and the tunneling oxide film. A control gate(14) is formed on the control oxide film.

Abstract translation: 目的：提供一种电荷存储层，其形成方法，其非易失性存储器件及其制造方法，以容易地控制非易失性存储器件的电荷存储层的密度和尺寸。 构成：在半导体衬底上形成隧道氧化膜（11）。 电荷存储层不连续地形成在隧道氧化膜上，并且包括至少两种不同的金属纳米晶体。 在电荷存储层的金属纳米晶体和隧道氧化膜上形成控制氧化膜（13）。 控制栅极（14）形成在控制氧化膜上。

公开(公告)号：KR101155108B1

公开(公告)日：2012-06-11

申请号：KR1020090038534

申请日：2009-04-30

Applicant: 국민대학교산학협력단

Inventor： 이장식 ,  손병혁 ,  김용무 ,  권정화 ,  신현정 ,  이재갑

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/792 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881

Abstract: Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.