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1.发明授权
公开(公告)号：KR101155108B1
公开(公告)日：2012-06-11
申请号：KR1020090038534
申请日：2009-04-30
Applicant: 국민대학교산학협력단
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/792 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/42348 , H01L29/7881
Abstract: Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.
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2.发明公开저온 선택 증착기술을 이용한 비광학적 방식의 금속배선 형성방법, 이를 이용하여 제조된 ＴＦＴ의 제조방법, 및 ＴＦＴ 기판의 제조방법 失效使用低温选择性沉积的非光学工艺形成金属接线及其方法，使用其制造TFT和TFT基板的TFT和方法
公开(公告)号：KR1020060112375A
公开(公告)日：2006-11-01
申请号：KR1020050034695
申请日：2005-04-26
Applicant: 국민대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L21/28562 , H01L21/76817 , H01L21/76867 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78678
Abstract: A method for forming a metal interconnection is provided to guarantee a simplified process by forming a low-resistive multilayered thin film of a Cu/Co structure while using an ALD or MOCVD method of a Co thin film and a Cu thin film and a micro contact printing method. Metal is deposited on a substrate by a micro contact printing method wherein OTS(octadecyltrichlorosilane) of a second pattern made of a reverse pattern of a desired first pattern is formed. A Co thin film(24) is deposited on the front surface of the substrate. A Co thin film is selectively deposited only in a region where OTS(22a) is not formed, made of the same pattern as the first pattern. The substrate region of the first pattern in which the OTS is not formed is a hydrophilic region where a nucleus can easily be generated. The substrate region of the second pattern in which the OTS is formed is a hydrophobic region where a nucleus is difficult to generate.
Abstract translation: 提供一种用于形成金属互连的方法，以通过在使用Co薄膜和Cu薄膜和微触点的ALD或MOCVD方法的同时形成Cu / Co结构的低电阻多层薄膜来保证简化的工艺 打印方式。 金属通过微接触印刷法沉积在基底上，其中形成由所需第一图案的反向图案制成的第二图案的OTS（十八烷基三氯硅烷）。 Co基薄膜（24）沉积在衬底的前表面上。 仅在不形成OTS（22a）的区域中选择性地沉积Co薄膜，由与第一图案相同的图案制成。 不形成OTS的第一图案的基板区域是容易产生核的亲水区域。 其中形成OTS的第二图案的衬底区域是难以产生核的疏水区域。
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3.发明授权저온 선택 증착기술을 이용한 비광학적 방식의 금속배선 형성방법, 이를 이용하여 제조된 ＴＦＴ의 제조방법, 및 ＴＦＴ 기판의 제조방법 失效通过使用低温选择性沉积的非光学方法形成金属布线的方法，使用其制造TFT和TFT基板的方法
公开(公告)号：KR100725251B1
公开(公告)日：2007-06-04
申请号：KR1020050034695
申请日：2005-04-26
Applicant: 국민대학교산학협력단
IPC: H01L29/786
Abstract: 본 발명은 마이크로 컨택 프린팅 방법에 의해 기판의 일부영역을 소수성 영역으로 표면개질을 실시한 후 저온에서 선택적인 증착방법으로 금속배선을 형성하고 이를 이용하여 TFT를 제작할 수 있는 단순화된 저온 선택 증착기술을 이용한 비광학적 방식의 금속배선과 그의 형성방법, 이를 이용하여 제조된 TFT와 TFT의 제조방법, 및 TFT 기판의 제조방법에 관한 것이다.
본 발명의 금속배선은 자기조립단분자막(SAMs)을 이용한 마이크로 컨택 프린팅 방법으로 표면의 선택적인 계면 처리를 통하여 자기조립단분자막을 패턴닝 한 후, ALD 또는 MOCVD 방법으로 처리된 표면위에 선택적으로 Co 및 Cu를 증착하여 금속배선 패턴을 형성한다. 본 발명은 저온 공정이 가능하여 증착면의 종류를 글래스, 실리콘, 플라스틱기판, 전도성 폴리머 등으로 다양화 할 수 있다.
금속배선, Co 선택 증착, 자기조립단분자막, 마이크로 컨택 프린팅, 저온증착, TFT, 유연기판-
Patent Agency Ranking4.发明公开
公开(公告)号：KR1020100119428A
公开(公告)日：2010-11-09
申请号：KR1020090038534
申请日：2009-04-30
Applicant: 국민대학교산학협력단
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/792 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L29/517
Abstract: PURPOSE: A charge storage layer, a forming method thereof, a nonvolatile memory device thereof, and a manufacturing method thereof are provided to easily control the density and size of the charge storage layer of a nonvolatile memory device. CONSTITUTION: A tunneling oxide film(11) is formed on the semiconductor substrate. The charge storage layer is discontinuously formed on the tunneling oxide film and includes at least two dissimilar metal nano crystals. A control oxide film(13) is formed on the metal nano crystal of the charge storage layer and the tunneling oxide film. A control gate(14) is formed on the control oxide film.
Abstract translation: 目的：提供一种电荷存储层，其形成方法，其非易失性存储器件及其制造方法，以容易地控制非易失性存储器件的电荷存储层的密度和尺寸。 构成：在半导体衬底上形成隧道氧化膜（11）。 电荷存储层不连续地形成在隧道氧化膜上，并且包括至少两种不同的金属纳米晶体。 在电荷存储层的金属纳米晶体和隧道氧化膜上形成控制氧化膜（13）。 控制栅极（14）形成在控制氧化膜上。
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公开(公告)号：KR101301953B1
公开(公告)日：2013-08-30
申请号：KR1020110089514
申请日：2011-09-05
Applicant: 국민대학교산학협력단
IPC: G01N27/406 , G01N27/02 , C23C16/448 , B82Y40/00
Abstract: 원자층 증착법을 이용하여 형성된 금속산화물 나노튜브를 이용한 센서, 및 이의 제조 방법에 관한 것이다.
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公开(公告)号：KR1020130026106A
公开(公告)日：2013-03-13
申请号：KR1020110089514
申请日：2011-09-05
Applicant: 국민대학교산학협력단
IPC: G01N27/406 , G01N27/02 , C23C16/448 , B82Y40/00
Abstract: PURPOSE: A sensor using a metal oxide nanotube and a manufacturing method of the same are provided to facilitate to change the structure of a nanotube and to adjust the wall thickness of the nanotubes by an atomic layer unit by manufacturing the nanotube through an atomic deposition layer. CONSTITUTION: A manufacturing method for a sensor using metal oxide nanotube(110) comprises the following steps: forming an aluminum oxide nanotube mold; forming a metal oxide thin film on the mold surface of aluminum oxide nanotube with an atomic layer deposition; forming the dual-structured nanotube of an aluminum oxide mold and a metal oxide thin film; depositing a first electrode(130) to the first tip end of the dual-structured nanotube of an aluminum oxide mold and a metal oxide thin film; partially exposing the metal oxide thin film by partially removing the aluminum oxide nanotube mold in the second tip end of the dual-structured nanotube of an aluminum oxide mold and a metal oxide thin film; depositing a second electrode(120) to the second tip end to which metal oxide thin film is partially exposed; and forming a metal oxide nanotube which is equipped with the first and second tip ends by removing the remained aluminum oxide nanotube mold.
Abstract translation: 目的：提供使用金属氧化物纳米管的传感器及其制造方法，以便于改变纳米管的结构，并且通过原子沉积层制造纳米管通过原子层单元调节纳米管的壁厚 。 构成：使用金属氧化物纳米管（110）的传感器的制造方法包括以下步骤：形成氧化铝纳米管模具; 在原子层沉积的氧化铝纳米管的模具表面上形成金属氧化物薄膜; 形成氧化铝模具和金属氧化物薄膜的双结构纳米管; 将第一电极（130）沉积到氧化铝模具和金属氧化物薄膜的双结构纳米管的第一末端; 通过部分去除氧化铝模具和金属氧化物薄膜的双结构纳米管的第二末端中的氧化铝纳米管模具来部分地暴露金属氧化物薄膜; 将第二电极（120）沉积到金属氧化物薄膜部分暴露的第二尖端; 以及通过除去剩余的氧化铝纳米管模具形成配备有第一和第二末端的金属氧化物纳米管。
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公开(公告)号：KR1020130132101A
公开(公告)日：2013-12-04
申请号：KR1020120056224
申请日：2012-05-25
Applicant: 국민대학교산학협력단
Abstract: The present application relates to an electrolyte membrane for a solid oxide fuel cell, a manufacturing method thereof, a solid oxide fuel cell including the electrolyte membrane, and a manufacturing method thereof and, more specifically, to the manufacturing method of the electrolyte membrane for a solid oxide fuel cell.
Abstract translation: 本发明涉及一种固体氧化物型燃料电池用电解质膜及其制造方法，包含该电解质膜的固体氧化物型燃料电池及其制造方法，更具体地说，涉及一种电解质膜的制造方法 固体氧化物燃料电池
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公开(公告)号：KR101016646B1
公开(公告)日：2011-02-25
申请号：KR1020090096412
申请日：2009-10-09
Applicant: 국민대학교산학협력단
CPC classification number: Y02E10/542 , H01L31/18 , H01L31/04
Abstract: PURPOSE: A dye-sensitized solar cell having a photoelectrode which is manufactured through atomic layer deposition and preparing method of the same is provided to improve efficiency by manufacturing a photoelectrode including a semiconductor nano tube and constructing an electronics transmission path. CONSTITUTION: A transparent conduction layer is formed on a substrate(S100). A porous mold is formed on the transparent conduction layer through a semiconductor nanotube(S200). The semiconductor nanotube is formed by depositing a semiconductor layer on the air hole surface of the porous mold through an atomic layer deposition(S300) The array of the semiconductor nanotube is formed by removing porous mold(S400). A dye layer is formed by absorbing dyes in a nano-tube array(S500).
Abstract translation: 目的：提供具有通过原子层沉积制造的光电极及其制备方法的染料敏化太阳能电池，以通过制造包括半导体纳米管的光电极并构建电子传输路径来提高效率。 构成：在基板上形成透明导电层（S100）。 通过半导体纳米管在透明导电层上形成多孔模具（S200）。 通过原子层沉积在多孔模具的气孔表面上沉积半导体层形成半导体纳米管（S300）。通过除去多孔模具形成半导体纳米管的阵列（S400）。 通过吸收纳米管阵列中的染料形成染料层（S500）。
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