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    플라즈마 성막방법
    2.
    发明授权
    플라즈마 성막방법 失效
    等离子体膜形成方法

    公开(公告)号：KR100944557B1

    公开(公告)日：2010-02-25

    申请号：KR1020087029165

    申请日：2005-08-25

    Applicant: 도쿄엘렉트론가부시키가이샤 ,  다이요 닛산 가부시키가이샤 ,  오미 다다히로

    Inventor： 고바야시야스오 ,  니시자와겐이치 ,  가메시마다카토시 ,  이사키류이치로 ,  신리키마나부

    IPC: H01L21/205 ,  H01L21/31

    CPC classification number: H01L21/0212 ,  C23C16/26 ,  C23C16/4402 ,  H01L21/02274 ,  H01L21/3127

    Abstract: 적외선 레이저 흡광방식에 의해 측정된 수분 함유량이 60×10
    -9 체적비 이하인 C
    5 F
    8 가스를 이용하여, 불소첨가 카본막을 성막함으로써, 열적 안정성이 뛰어난 불소첨가 카본막을 얻는 것을 목적으로 한다. C
    5 F
    8 가스의 공급원(1)과 웨이퍼(W)에 대해 C
    5 F
    8 가스를 플라즈마화시켜 불소첨가 카본막을 성막하는 성막처리부(3)의 사이에, 친수성 또는 환원 작용이 있는 표층을 구비한 물질을 충전한 정제기(2)를 설치하고, C
    5 F
    8 가스를 정제기(2)에 통기시킴으로써, C
    5 F
    8 가스의 수분을 제거하여, 예를 들면 수분 함유량이 20×10
    -9 체적비 정도의 C
    5 F
    8 가스를 성막처리부(3)에 도입하여, 불소첨가 카본막을 성막한다. 이렇게 하면, 성막된 불소첨가 카본막에 받아들여지는 수분량이 극히 적어져, 다음의 가열 공정에서 막중의 수분에 기인하는 불소의 이탈이 발생하기 어려워져서, 막의 열적 안정성을 높일 수 있다.

    플라즈마 성막방법 및 그 장치
    5.
    发明公开
    플라즈마 성막방법 및 그 장치 失效
    等离子体薄膜成型方法及其设备

    公开(公告)号：KR1020080066096A

    公开(公告)日：2008-07-15

    申请号：KR1020087016250

    申请日：2005-08-25

    Applicant: 도쿄엘렉트론가부시키가이샤 ,  다이요 닛산 가부시키가이샤 ,  오미 다다히로

    Inventor： 고바야시야스오 ,  니시자와겐이치 ,  가메시마다카토시 ,  이사키류이치로 ,  신리키마나부

    IPC: H01L21/205

    CPC classification number: H01L21/0212 ,  C23C16/26 ,  C23C16/4402 ,  H01L21/02274 ,  H01L21/3127

    Abstract: A plasma film-forming method which comprises providing a purifying chamber (2) packed with a substance having a surface layer exhibiting a hydrophilic property or reducing action between a source (1) for supplying a C5H8 gas and a film-forming treatment section (3) for converting the C5H8 gas so as to have a plasmatic state and forming a fluorine-doped carbon film on a wafer (W), passing a C5H8 gas through the purifying chamber (2) to remove the moisture in the C5H8 gas and introduce the resultant C5H8 gas having a moisture content of, for example, about 20 X 10-9 volume ratio to the film-forming treatment section (3), to form a fluorine-doped carbon film. The above plasma film-forming method allows the reduction of the amount of the water incorporated into the resultant fluorine-doped carbon film to an extremely low level, which results in the decrease of the elimination of fluorine in a subsequent heating step due to the moisture in the resultant film, leading to the higher thermal stability of the film. Specifically, the above method allows the formation of a fluorine-doped carbon film exhibiting excellent thermal stability, by preparing and using a C5H8 gas having a moisture content of 60 X 10-9 volume ratio or less.

    Abstract translation: 一种等离子体成膜方法，其特征在于，提供一种填充有表面层的物质的净化室（2），所述物质具有在供给C5H8气体的源（1）和成膜处理部（3）之间具有亲水性或还原作用 ）将C5H8气体转化为具有等离子体状态并在晶片（W）上形成氟掺杂碳膜，使C5H8气体通过净化室（2）以除去C5H8气体中的水分，并引入 与成膜处理部（3）的水分含量例如为约20×10 -9体积比的所得到的C5H8气体形成氟掺杂碳膜。 上述等离子体成膜方法允许将掺入到所得氟掺杂碳膜中的水的量减少到极低的水平，这导致随后的加热步骤中由于水分而导致的氟的消除减少 在所得膜中导致膜的较高的热稳定性。 具体地说，通过制备和使用水分含量为60×10 -9体积比以下的C5H8气体，能够形成显示优异的热稳定性的氟掺杂碳膜。

    성막 방법 및 성막 장치
    6.
    发明授权
    성막 방법 및 성막 장치 失效
    성막방법및성막장치

    公开(公告)号：KR100930430B1

    公开(公告)日：2009-12-08

    申请号：KR1020077022943

    申请日：2006-04-07

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 가메시마다카토시 ,  가와무라고헤이 ,  고바야시야스오

    IPC: H01L21/20 ,  H01L21/205

    CPC classification number: C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

    Abstract: A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

    Abstract translation: 成膜方法的特征在于，具备在处理室内导入包含无机硅烷气体的处理气体的工序，在该处理室内配置有由含有金属氧化物的陶瓷构成的载置台， 该处理室包括具有含硅非金属薄膜的安装台的表面; 将待处理基板安装在预涂有非金属薄膜的安装台上的步骤; 以及将包含有机硅烷气体的处理气体导入处理室内，在载置于载置台上的基板的表面形成含硅的非金属薄膜的工序。

    플라즈마 성막방법
    7.
    发明公开
    플라즈마 성막방법 失效
    等离子体膜形成方法

    公开(公告)号：KR1020080108370A

    公开(公告)日：2008-12-12

    申请号：KR1020087029165

    申请日：2005-08-25

    Applicant: 도쿄엘렉트론가부시키가이샤 ,  다이요 닛산 가부시키가이샤 ,  오미 다다히로

    Inventor： 고바야시야스오 ,  니시자와겐이치 ,  가메시마다카토시 ,  이사키류이치로 ,  신리키마나부

    IPC: H01L21/205 ,  H01L21/31

    CPC classification number: H01L21/0212 ,  C23C16/26 ,  C23C16/4402 ,  H01L21/02274 ,  H01L21/3127

    Abstract: A plasma film-forming method which comprises providing a purifying chamber (2) packed with a substance having a surface layer exhibiting a hydrophilic property or reducing action between a source (1) for supplying a C5H8 gas and a film-forming treatment section (3) for converting the C5H8 gas so as to have a plasmatic state and forming a fluorine-doped carbon film on a wafer (W), passing a C5H8 gas through the purifying chamber (2) to remove the moisture in the C5H8 gas and introduce the resultant C5H8 gas having a moisture content of, for example, about 20 X 10-9 volume ratio to the film-forming treatment section (3), to form a fluorine-doped carbon film. The above plasma film-forming method allows the reduction of the amount of the water incorporated into the resultant fluorine-doped carbon film to an extremely low level, which results in the decrease of the elimination of fluorine in a subsequent heating step due to the moisture in the resultant film, leading to the higher thermal stability of the film. Specifically, the above method allows the formation of a fluorine-doped carbon film exhibiting excellent thermal stability, by preparing and using a C5H8 gas having a moisture content of 60 X 10-9 volume ratio or less. ® KIPO & WIPO 2009

    Abstract translation: 一种等离子体成膜方法，其特征在于，提供一种填充有表面层的物质的净化室（2），所述物质具有在供给C5H8气体的源（1）和成膜处理部（3）之间具有亲水性或还原作用 ）将C5H8气体转化为具有等离子体状态并在晶片（W）上形成氟掺杂碳膜，使C5H8气体通过净化室（2）以除去C5H8气体中的水分，并引入 与成膜处理部（3）的水分含量例如为约20×10 -9体积比的所得到的C5H8气体形成氟掺杂碳膜。 上述等离子体成膜方法允许将掺入到所得氟掺杂碳膜中的水的量减少到极低的水平，这导致随后的加热步骤中由于水分而导致的氟的消除减少 在所得膜中导致膜的较高的热稳定性。 具体地说，通过制备和使用水分含量为60×10 -9体积比以下的C5H8气体，能够形成显示优异的热稳定性的氟掺杂碳膜。 ®KIPO＆WIPO 2009

    성막 방법 및 성막 장치
    8.
    发明公开
    성막 방법 및 성막 장치 失效
    薄膜成型方法和薄膜成型装置

    公开(公告)号：KR1020070110428A

    公开(公告)日：2007-11-16

    申请号：KR1020077022943

    申请日：2006-04-07

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 가메시마다카토시 ,  가와무라고헤이 ,  고바야시야스오

    IPC: H01L21/20 ,  H01L21/205

    CPC classification number: C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

    Abstract: A film forming method is characterized in that the method is provided with a step of introducing a treatment gas including inorganic silane gas into a treatment chamber, in which a placing table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the treatment chamber including a surface of the placing table with a nonmetal thin film including silicon; a step of placing a substrate to be treated on the placing table precoated with the nonmetal thin film; and a step of introducing a treatment gas including organic silane gas into the treatment chamber, and forming a nonmetal thin film including silicon on a surface of the substrate placed on the placing table.

    Abstract translation: 成膜方法的特征在于，该方法具有将包含无机硅烷气体的处理气体引入处理室的步骤，在该处理室中配置由包含金属氧化物的陶瓷构成的放置台， 所述处理室包括具有包含硅的非金属薄膜的所述放置台的表面; 将待处理的基板放置在预先涂覆有非金属薄膜的放置台上的步骤; 以及将包括有机硅烷气体的处理气体引入处理室的步骤，以及在放置台上的基板的表面上形成包含硅的非金属薄膜。

    플라즈마 성막방법 및 그 장치
    9.
    发明公开
    플라즈마 성막방법 및 그 장치 无效
    等离子体薄膜成型方法及其设备

    公开(公告)号：KR1020070064330A

    公开(公告)日：2007-06-20

    申请号：KR1020077006711

    申请日：2005-08-25

    Applicant: 도쿄엘렉트론가부시키가이샤 ,  다이요 닛산 가부시키가이샤 ,  오미 다다히로

    Inventor： 고바야시야스오 ,  니시자와겐이치 ,  가메시마다카토시 ,  이사키류이치로 ,  신리키마나부

    IPC: H01L21/205 ,  H01L21/31

    CPC classification number: H01L21/0212 ,  C23C16/26 ,  C23C16/4402 ,  H01L21/02274 ,  H01L21/3127

    Abstract: A plasma film-forming method which comprises providing a purifying chamber (2) packed with a substance having a surface layer exhibiting a hydrophilic property or reducing action between a source (1) for supplying a C5H8 gas and a film-forming treatment section (3) for converting the C5H8 gas so as to have a plasmatic state and forming a fluorine-doped carbon film on a wafer (W), passing a C5H8 gas through the purifying chamber (2) to remove the moisture in the C5H8 gas and introduce the resultant C5H8 gas having a moisture content of, for example, about 20 X 10-9 volume ratio to the film-forming treatment section (3), to form a fluorine-doped carbon film. The above plasma film-forming method allows the reduction of the amount of the water incorporated into the resultant fluorine-doped carbon film to an extremely low level, which results in the decrease of the elimination of fluorine in a subsequent heating step due to the moisture in the resultant film, leading to the higher thermal stability of the film. Specifically, the above method allows the formation of a fluorine-doped carbon film exhibiting excellent thermal stability, by preparing and using a C5H8 gas having a moisture content of 60 X 10-9 volume ratio or less.

    Abstract translation: 一种等离子体成膜方法，其特征在于，提供一种填充有表面层的物质的净化室（2），所述物质具有在供给C5H8气体的源（1）和成膜处理部（3）之间具有亲水性或还原作用 ）将C5H8气体转化为具有等离子体状态并在晶片（W）上形成氟掺杂碳膜，使C5H8气体通过净化室（2）以除去C5H8气体中的水分，并引入 与成膜处理部（3）的水分含量例如为约20×10 -9体积比的所得到的C5H8气体形成氟掺杂碳膜。 上述等离子体成膜方法允许将掺入到所得氟掺杂碳膜中的水的量减少到极低的水平，这导致随后的加热步骤中由于水分而导致的氟的消除减少 在所得膜中导致膜的较高的热稳定性。 具体地说，通过制备和使用水分含量为60×10 -9体积比以下的C5H8气体，能够形成显示优异的热稳定性的氟掺杂碳膜。

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