公开(公告)号：KR1020020095215A

公开(公告)日：2002-12-20

申请号：KR1020027013885

申请日：2001-04-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  다카하시도시키 ,  고마츠다쿠미

IPC: H05H1/34

CPC classification number: H01J37/32082 ,  H01J37/32532

Abstract: A plasma processing apparatus for plasma processing using a high-density plasma and adaptable to finer microfabrication comprise an electrode plate provided with an upper electrode having a dielectric member or a cavity and a lower electrode serving as a susceptor and opposed to the upper electrode. The size and dielectric constant of the dielectric member are determined so that resonance may be caused by the frequency of high-frequency power fed to the central portion of the back of the electrode and that the electric field is perpendicular to the electrode plate may be produced so as to reduce the uneveness of the distribution of the electric field over the top surface of the electrode.

Abstract translation: 一种使用高密度等离子体等离子体处理的等离子体处理装置，其特征在于，具有具有电介质部件或空腔的上部电极的电极板和作为基座的下部电极，与上部电极相对。 确定电介质构件的尺寸和介电常数，使得可以由馈送到电极背部的中心部分的高频电力的频率引起共振，并且可能产生与电极板垂直的电场 以减少在电极顶表面上的电场分布的不均匀性。

公开(公告)号：KR100934512B1

公开(公告)日：2009-12-29

申请号：KR1020027013885

申请日：2001-04-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  다카하시도시키 ,  고마츠다쿠미

IPC: H05H1/34

CPC classification number: H01J37/32082 ,  H01J37/32532

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract translation: 本发明提供一种等离子体处理装置，该等离子体处理装置具有：配置有电极板的电极板;设置有电介质部件或空洞部的上部电极，其尺寸或介电常数决定为使得在 产生提供给背面中心的高频电力的频率和与电极板正交的电场的频率，以及作为下部电极的基座彼此相对，以减少电的不均匀性 在使用能够应对进一步细化的高密度等离子体的等离子体处理中的电极表面上的场分布。 ＆lt;图像＆GT;

公开(公告)号：KR1020090027255A

公开(公告)日：2009-03-16

申请号：KR1020097001866

申请日：2001-04-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  다카하시도시키 ,  고마츠다쿠미

IPC: H05H1/34 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32082 ,  H01J37/32532

Abstract: A plasma processing apparatus for plasma processing using a high-density plasma and adaptable to finer microfabrication comprise an electrode plate provided with an upper electrode having a dielectric member or a cavity and a lower electrode serving as a susceptor and opposed to the upper electrode. The size and dielectric constant of the dielectric member are determined so that resonance may be caused by the frequency of high-frequency power fed to the central portion of the back of the electrode and that the electric field is perpendicular to the electrode plate may be produced so as to reduce the uneveness of the distribution of the electric field over the top surface of the electrode.

Abstract translation: 一种使用高密度等离子体等离子体处理的等离子体处理装置，其特征在于，具有具有电介质部件或空腔的上部电极的电极板和作为基座的下部电极，与上部电极相对。 确定电介质构件的尺寸和介电常数，使得可以由馈送到电极背部的中心部分的高频电力的频率引起共振，并且可能产生与电极板垂直的电场 以减少在电极顶表面上的电场分布的不均匀性。