公开(公告)号：KR1020140020785A

公开(公告)日：2014-02-19

申请号：KR1020130094096

申请日：2013-08-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 구가야스히로 ,  이토나가마사시

IPC: H01L21/027

CPC classification number: H01J37/02 ,  H01J37/32449 ,  H01J37/32825 ,  H01L21/0273

Abstract: The purpose of the prevent invention is to adjust the concentration of processing gas within a surface side when the discharge of the processing gas from a gas supply unit is started. When a wafer (W) is processed by the processing gas within a processing container (2) under the normal pressure atmosphere, a gas supply unit (5) having a gas discharge surface (50) which is faced with the wafer (W) arranged on an arrangement unit (23) is installed. The gas supply unit (5) comprises a gas flow path (51). The flow path length and flow path diameter of the gas flow path (51) are set up so that a gas passing time from a gas supply port (52) to each of multiple gas discharge ports (53) formed on the gas discharge surface (50) is fitted. Therefore, the timing that the processing gas arrives at the gas discharge port (53) is fitted immediately after the discharge start of the processing gas. Therefore, the concentration of the processing gas within a substrate side is fitted and the processing having high in-plane uniformity is executed when the discharge of the processing gas from the gas supply unit (5) is started. [Reference numerals] (100) Control unit; (11) Processing part; (2) Processing container; (200) Processing area; (23) Arrangement unit; (5) Gas providing unit; (50) Gas discharge unit; (51) Gas flow path; (52) Gas supply port; (53) Gas discharge port

Abstract translation: 防止发明的目的是当开始从气体供应单元排出处理气体时调节表面侧内的处理气体的浓度。 当在正常压力的气氛下，处理容器（2）内的处理气体处理晶片（W）时，具有排出面（50）的气体供给单元（5） 在安装单元（23）上。 气体供给单元（5）包括气体流路（51）。 气体流路（51）的流路长度和流路直径被设定为使得从气体供给口（52）到气体排出面（形成在气体排出面上的多个气体排出口53）的气体通过时间 50）。 因此，处理气体到达气体排出口53的时刻在处理气体的排出开始后立即被配置。 因此，当开始从气体供给单元（5）的处理气体的排出时，进行基板侧的处理气体的浓度的进行，并且执行具有高的面内均匀性的处理。 （附图标记）（100）控制单元; （11）加工部件; （2）加工容器; （200）加工区; （23）安排单位; （5）供气单元; （50）排气单元; （51）气体流路; （52）供气口; （53）排气口

公开(公告)号：KR1020110040696A

公开(公告)日：2011-04-20

申请号：KR1020100099026

申请日：2010-10-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미즈나가고오이찌 ,  구가야스히로 ,  가네다마사또시

IPC: H01L21/02 ,  H01L21/027 ,  G03F7/26

CPC classification number: H01L21/67103 ,  H01L21/68735 ,  G03F7/265 ,  G03F7/70691 ,  H01L21/02002 ,  H01L21/0274

Abstract: PURPOSE: A substrate cooling device, substrate cooling method, and recording medium thereof are provided to have a groove for spreading a cooling gas in the circumferential direction of a substrate, thereby uniformly cooling the substrate. CONSTITUTION: A loading plate(11) includes a loading surface on which a substrate is loaded. The loading plate includes a disc(2) configuring the surface of the loading plate and a support unit supporting the disc. A coolant flow path is installed in the loading plate to cool the loading surface. A gas discharging hole(21) discharges a cooling gas to cool a substrate. A gas suctioning hole(22) suctions the cooling gas. A groove(24) spreads the cooling gas in the circumferential direction of the substrate.

Abstract translation: 目的：将基板冷却装置，基板冷却方法及其记录介质设置成具有用于在基板的周向上散布冷却气体的槽，从而均匀地冷却基板。 构成：装载板（11）包括其上装载有基板的装载表面。 装载板包括构成装载板的表面的盘（2）和支撑盘的支撑单元。 冷却剂流路安装在装载板中以冷却装载表面。 气体排出孔（21）排出冷却气体以冷却基板。 吸气孔（22）吸入冷却气体。 凹槽（24）沿着基板的圆周方向扩散冷却气体。

公开(公告)号：KR101559187B1

公开(公告)日：2015-10-12

申请号：KR1020100099026

申请日：2010-10-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미즈나가고오이찌 ,  구가야스히로 ,  가네다마사또시

IPC: H01L21/02 ,  H01L21/027 ,  G03F7/26

CPC classification number: H01L21/67103 ,  H01L21/68735

Abstract: 본발명의과제는균일성높게기판을냉각할수 있는기판냉각장치를제공하는것이다. 기판을적재하는적재면을구비한적재대와, 상기적재면에설치되어, 상기기판의이면을지지하는돌기와, 상기적재면을냉각하기위해상기적재대에설치되어, 냉매가유통하는냉매유로와, 상기적재면의주연부에둘레방향으로복수형성되어, 기판을냉각하기위한냉각가스를토출하는가스토출구와, 상기적재면의중앙부에형성되어, 상기냉각가스를흡인하기위한가스흡인구와, 상기적재면에형성되어, 냉각가스를기판의둘레방향을향해확산시키기위한홈을구비하도록기판냉각장치를구성한다. 이와같이구성함으로써, 상기적재면에적재된기판을균일성높게냉각할수 있다.