公开(公告)号：KR101061633B1

公开(公告)日：2011-09-01

申请号：KR1020080080928

申请日：2008-08-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  구마가이아키라 ,  와카바야시사토시

IPC: H01L21/24 ,  H01L21/20

Abstract: 질화 타이타늄막을 성막하는 공정만으로 실리사이드화 반응이 일어나기 쉽게 함으로써 스루풋을 비약적으로 향상시킨다.
웨이퍼 상에 타이타늄 화합물 가스와 환원 가스와 질소 가스를 공급하면서 플라즈마를 생성함으로써 웨이퍼 상에 질화 타이타늄막을 성막하는 공정을 갖고, 이 공정에서 질소 가스는 그 공급 개시부터 소정의 설정 유량에 이르기까지(시간 Ts), 그 공급 유량을 서서히 증가시키도록 공급함으로써, 실리콘 함유 표면에 타이타늄 실리사이드막을 형성하면서 웨이퍼 상에 질화 타이타늄막을 성막한다.

Abstract translation: 仅在形成氮化钛膜的步骤中容易引起硅化反应，从而显着提高生产量。

公开(公告)号：KR1020090060198A

公开(公告)日：2009-06-11

申请号：KR1020080123130

申请日：2008-12-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  구마가이아키라 ,  와카바야시사토시

IPC: C23C16/00

Abstract: A titanium layer deposition method and apparatus are provided to make the silicide phase uniform by restricting the crystallization of titanium silicide layer and deviation of composition in the process of silicidation of titanium, thereby improve uniformity of wafer surface. A titanium layer deposition apparatus(12) comprises a treatment chamber(14) capable of vacuum evacuation, a mounting table(38) which is installed within the treatment chamber to hold an object, a heating device(42) heating the object, a gas supply device for supplying a source gas including titanium, reductant gas and inactive gas into the treatment chamber, a plasma generator(28) forming plasma within the treatment chamber, and a controller(74) which controls in order to perform a deposition method.

Abstract translation: 提供钛层沉积方法和装置，通过限制钛硅化物层的结晶和钛的硅化过程中的组成偏差来使硅化物相均匀，从而提高晶片表面的均匀性。 钛层沉积设备（12）包括能够真空抽真空的处理室（14），安装在处理室内以保持物体的安装台（38），加热物体的加热装置（42） 供给装置，用于将包括钛，还原剂气体和惰性气体的源气体供应到处理室中;等离子体发生器（28），其在处理室内形成等离子体;以及控制器（74），其控制以执行沉积方法。

公开(公告)号：KR1020090032963A

公开(公告)日：2009-04-01

申请号：KR1020080080928

申请日：2008-08-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  구마가이아키라 ,  와카바야시사토시

IPC: H01L21/24 ,  H01L21/20

Abstract: A metal layer depositing method and a computer-readable recording medium are provided to improve the throughput by forming the desired silicide film into the process of depositing the titanium nitride film. A substrate processing apparatus(100) comprises a common return chamber(102) formed with the polygonal shape and a plurality of process chambers(104A~104D) which can absorb in a vacuum. The substrate processing apparatus comprises a carry-in side transfer room(110) of the rectangular shape having two load-lock chambers(108A,108B) capable of inhaling in the vacuum condition. The substrate processing apparatus comprises a plurality of induction pots(112A~112C) accommodating a plurality of silicon wafers(W) and the cassette, and an orienteer(114) rotating the wafer. The process chamber is connected through gate valves(106A~106D). Main chucks(105A~105D) accommodating the wafer are prepared in each process chamber.

Abstract translation: 提供金属层沉积方法和计算机可读记录介质以通过将所需的硅化物膜形成到沉积氮化钛膜的过程中来提高生产量。 基板处理装置（100）包括形成为多边形的公共返回室（102）和能够在真空中吸收的多个处理室（104A〜104D）。 基板处理装置包括矩形形状的携带侧传送室（110），其具有能够在真空条件下吸入的两个负载锁定室（108A，108B）。 基板处理装置包括容纳多个硅晶片（W）和盒的多个感应罐（112A〜112C）和旋转晶片的定向件（114）。 处理室通过闸阀（106A〜106D）连接。 在每个处理室中准备容纳晶片的主卡盘（105A〜105D）。