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公开(公告)号：KR100915252B1
公开(公告)日：2009-09-03
申请号：KR1020010055142
申请日：2001-09-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: 본 발명은 피처리체에 대해 성막 처리를 실시하기 위한 처리 챔버의 천정부에 설치되어 소정 가스를 공급하는 샤워 헤드 구조체로서, 복수의 가스 분사 구멍이 개구된 저부를 갖는 컵 형상으로 형성되고, 그 컵 형상의 개구측에 상기 천정부로의 장착용 접합 플랜지부가 일체적으로 형성된 헤드 본체와, 상기 헤드 본체의 저부 근방에 설치되어, 상기 헤드 본체를 원하는 온도로 조정하는 헤드 가열부를 구비하고, 저온하에서의 재현성을 향상시킨 성막 처리와 고온하에서의 반응 부생성물의 제거를 실행하는 샤워 헤드 구조체이다.
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公开(公告)号：KR100907968B1
公开(公告)日：2009-07-16
申请号：KR1020080073220
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: There is disclosed a shower head structure, disposed on a ceiling portion of a process chamber for subjecting a material to be treated to a film forming process, for supplying a predetermined gas, the structure comprising a head main body formed in a cup shape having a bottom with a plurality of gas injection holes opened therein, and formed integrally with a joining flange portion to be attached to the ceiling portion of the process chamber on an opening side of the cup shape, and a head heating portion, disposed on the bottom of the head main body, for adjusting the head main body at a desired temperature, so that the film forming process for enhancing reproducibility under a low temperature is performed and a reactive byproduct is removed under a high temperature.
Abstract translation: 本发明公开了一种喷淋头结构，其设置在处理室的顶部上，用于对待处理材料进行成膜处理，用于供给预定的气体，该结构包括：形成为杯状的头部主体，该头部主体具有 底部具有多个在其中开口的气体喷射孔，并且与在杯形的开口侧上附接到处理室的顶部的接合凸缘部一体地形成;以及头部加热部，其设置在底部上 头主体，用于将头主体调整在期望的温度，从而执行用于在低温下提高再现性的成膜过程，并且在高温下去除反应副产物。
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公开(公告)号：KR100919331B1
公开(公告)日：2009-09-25
申请号：KR1020080073222
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: 본 발명은 피처리체에 대해 성막 처리를 실시하기 위한 처리 챔버의 천정부에 설치되어 소정 가스를 공급하는 샤워 헤드 구조체로서, 복수의 가스 분사 구멍이 개구된 저부를 갖는 컵 형상으로 형성되고, 그 컵 형상의 개구측에 상기 천정부로의 장착용 접합 플랜지부가 일체적으로 형성된 헤드 본체와, 상기 헤드 본체의 저부 근방에 설치되어, 상기 헤드 본체를 원하는 온도로 조정하는 헤드 가열부를 구비하고, 저온하에서의 재현성을 향상시킨 성막 처리와 고온하에서의 반응 부생성물의 제거를 실행하는 샤워 헤드 구조체이다.
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Patent Agency Ranking
公开(公告)号：KR100919330B1
公开(公告)日：2009-09-25
申请号：KR1020080073221
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: 본 발명은 피처리체에 대해 성막 처리를 실시하기 위한 처리 챔버의 천정부에 설치되어 소정 가스를 공급하는 샤워 헤드 구조체로서, 복수의 가스 분사 구멍이 개구된 저부를 갖는 컵 형상으로 형성되고, 그 컵 형상의 개구측에 상기 천정부로의 장착용 접합 플랜지부가 일체적으로 형성된 헤드 본체와, 상기 헤드 본체의 저부 근방에 설치되어, 상기 헤드 본체를 원하는 온도로 조정하는 헤드 가열부를 구비하고, 저온하에서의 재현성을 향상시킨 성막 처리와 고온하에서의 반응 부생성물의 제거를 실행하는 샤워 헤드 구조체이다.
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公开(公告)号：KR1020080083243A
公开(公告)日：2008-09-17
申请号：KR1020080073222
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: A shower head structure and a gas processing apparatus are provided to prevent the friction between members by forming an adiabatic material including a resin in a gap between the members. A process chamber performs a substrate treatment process. The process chamber includes a shower head installed therein in order to supply a process gas. A gas injection unit includes a plurality of gas injection holes(94) which are formed at a bottom part of the shower head. A junction unit is formed at a top end of the shower head in order to install the shower head at a top end of the process chamber. A sidewall part and the shower head are formed with one body. The sidewall part includes a concave part(118) for reducing a sectional surface thereof.
Abstract translation: 提供了一种淋浴头结构和气体处理装置，以通过在构件之间的间隙中形成包括树脂的绝热材料来防止构件之间的摩擦。 处理室进行基板处理工艺。 处理室包括安装在其中以供应处理气体的淋浴喷头。 气体喷射单元包括形成在喷淋头的底部的多个气体喷射孔（94）。 接头单元形成在淋浴头的顶端，以将淋浴头安装在处理室的顶端。 侧壁部分和淋浴头形成有一个主体。 侧壁部分包括用于减小其截面的凹部（118）。
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公开(公告)号：KR1020080083242A
公开(公告)日：2008-09-17
申请号：KR1020080073221
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: A gas processing apparatus is provided to enhance reproducibility of a layer by forming uniformly a thickness of a layer. A shower head is installed in the inside of a process chamber in order to supply a process gas. A plurality of gas injection holes(94) are formed at a bottom part of the shower head. A junction part is formed at a top end of the shower head in order to bond the shower head. A sealing member(110) is formed at a junction part between the process chamber and the shower head. An adiabatic material is inserted into a sealing side between the process chamber and the junction part.
Abstract translation: 提供一种气体处理装置，以通过均匀地形成层的厚度来增强层的再现性。 淋浴头安装在处理室的内部，以便提供处理气体。 多个气体喷射孔（94）形成在淋浴头的底部。 接头部分形成在淋浴头的顶端以便结合淋浴喷头。 密封构件（110）形成在处理室和淋浴头之间的接合部分处。 将绝热材料插入处理室和接合部分之间的密封侧。
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公开(公告)号：KR1020080083241A
公开(公告)日：2008-09-17
申请号：KR1020080073220
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: A cleaning method of a process chamber is provided to suppress the generation of particles by removing the generation of friction due to thermal expansion. A shower head structure is loaded into a process chamber(22) of a layer forming apparatus(20) to perform a layer forming process for depositing reactants on a surface of a heated target in process gas atmosphere. The shower head structure is used for introducing a process gas into the process chamber. When the cleaning gas is introduced from the shower head structure to the process chamber, the temperature of the shower head structure is set at the temperature higher than the temperature of a layer forming process. The temperature of the shower head structure is 130 degrees centigrade or more.
Abstract translation: 提供处理室的清洁方法，以通过消除由于热膨胀产生的摩擦来抑制颗粒的产生。 淋浴头结构被装载到层形成装置（20）的处理室（22）中以进行用于在处理气体气氛中在加热的靶的表面上沉积反应物的层形成过程。 淋浴头结构用于将处理气体引入处理室。 当清洗气体从喷淋头结构引入处理室时，喷淋头结构的温度设定在高于层形成工艺的温度的温度。 淋浴头结构的温度为130摄氏度或更高。
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公开(公告)号：KR1020020020648A
公开(公告)日：2002-03-15
申请号：KR1020010055142
申请日：2001-09-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: PURPOSE: A shower head structure, a device and a method for film formation, and a method for cleaning are provided to improve and highly maintain the reproducibility of a film forming process and that can easily remove, in a short time, reaction by-products stuck in the process of film formation. CONSTITUTION: A shower head structure(80) is installed in the ceiling part of a processing container for applying the film formation to a workpiece W and that is intended to supply a prescribed gas. The shower head is equipped with the head body part(82) which is shaped in a bottom-attached cylinder having a bottom with a plurality of gas injection holes(94) opened, and which is integrally formed with a connecting flange for the ceiling installation on the opening side of the cup configuration; it is also equipped with the head heating part(100) which is provided on the bottom of the head body part and which is designed to adjust the gas injector of the head body part at a desired temperature. The shower head structure executes a film-forming process, in which the reproducibility is enhanced under at a low temperature, as well as a process of removing reaction by-products at high temperatures.
Abstract translation: 目的：提供一种喷头结构，一种成膜装置和方法以及一种清洗方法，以改善和高度保持成膜过程的再现性，并且可以在短时间内容易地除去反应副产物 卡在成膜过程中。 构成：喷淋头结构（80）安装在用于将成膜施加到工件W的处理容器的顶部，并且旨在供应规定的气体。 淋浴头配备有头部本体部分（82），头部主体部分（82）成形为具有底部的底部连接的多个气体喷射孔（94）打开的底部，并且与顶部安装的连接凸缘一体形成 在杯子配置的开口侧; 它还配备有设置在头主体部分的底部上的头部加热部分（100），其被设计成将头部主体部分的气体注射器调节到期望的温度。 淋浴头结构执行其中在低温下再现性增强的成膜方法以及在高温下除去反应副产物的方法。
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