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公开(公告)号：KR1020120022648A
公开(公告)日：2012-03-12
申请号：KR1020110083310
申请日：2011-08-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205 , H01L21/203 , H05H1/46
CPC classification number: H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
Abstract: PURPOSE: A plasma processing method and a plasma processing apparatus using the same are provided to improve controllability of a radio frequency bias function, thereby optimizing a plasma process with respect to various required conditions for a micro manufacturing process. CONSTITUTION: A susceptor supporting table(14) of a cylindrical shape is arranged on the bottom of a chamber(10). A susceptor(16) is installed on the susceptor supporting table. An electrostatic chuck(18) for adsorbing a semiconductor wafer(W) is installed on the upper surface of the susceptor. A coolant passage(30) is formed inside of the susceptor supporting table. A first high frequency power source(36) and a second high frequency power source(38) are electrically connected to each other by respectively including lower matching devices(40,42) and lower power supply conductors(44,46).
Abstract translation: 目的：提供等离子体处理方法和使用该等离子体处理方法的等离子体处理装置，以改善射频偏置功能的可控性，从而优化关于微制造工艺的各种所需条件的等离子体处理。 构成：在室（10）的底部设置有圆筒状的感受器支撑台（14）。 感受器（16）安装在基座支撑台上。 用于吸附半导体晶片（W）的静电卡盘（18）安装在基座的上表面上。 冷却剂通道（30）形成在基座支撑台的内部。 第一高频电源（36）和第二高频电源（38）通过分别包括下匹配装置（40,42）和下电源导体（44,46）彼此电连接。
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公开(公告)号：KR101841585B1
公开(公告)日：2018-03-23
申请号：KR1020110083310
申请日：2011-08-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205 , H01L21/203 , H05H1/46
CPC classification number: H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
Abstract: RF 바이어스기능의제어성을향상시켜, 미세가공의다양한요구조건에대하여플라즈마프로세스의최적화를실현한다. 이플라즈마에칭장치는, 제 3 고주파전원(66)으로부터용량결합의플라즈마생성에적합한고주파(RF)를상부전극(48)(또는하부전극(16))에인가하고, 플라즈마로부터반도체웨이퍼(W)에입사하는이온의에너지를제어하기위하여, 제 1 및제 2 고주파전원(36, 38)으로부터이온인입에적합한 2 종류의고주파(RF(0.8 MHz), RF(13 MHz))를서셉터(16)에중첩하여인가한다. 프로세스의사양, 조건또는레시피에따라제어부(88)가두 고주파(RF, RF)의토탈파워및 파워비를제어한다.
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