公开(公告)号：KR1020010090743A

公开(公告)日：2001-10-19

申请号：KR1020010018172

申请日：2001-04-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 기타노쥰이치 ,  하다게이코 ,  오노유코 ,  가타노다카유키 ,  마쓰이히데후미

IPC: H01L21/027

CPC classification number: G03F7/16 ,  Y10T428/2995

Abstract: PURPOSE: To evaluate the hydrophobicity on the surface of a substrate with high reliability and optimize hydrophobic treatment conditions, in a device for forming a resist pattern. CONSTITUTION: An HMDS gas is supplied to the surface of a wafer W for hydrophobic treatment, and the wafer W is housed in a sealed container 6 on a cassette stage 21 and it is conveyed to an analyzer A2 outside a device A1 for forming a resist pattern. The masses of ion kinds on the surface of the wafer W, such as CH3Si+, C3H9Si+, C3H9Si-, etc., are analyzed by using an analytical section such as TOF-SIMS, etc., thereby of the analytical equipment A2 measuring the quantity of HMDS(hexamethyl disilazane) on the surface of the wafer W. Thus, a quantity of HMDS on the surface of the wafer W can be measured, and hydrophobic treatment condition be evaluated with high reliability.

Abstract translation: 目的：用于形成抗蚀剂图案的装置中，以高可靠性和优化疏水处理条件来评估基材表面上的疏水性。 构成：将HMDS气体供给到用于疏水处理的晶片W的表面，并且将晶片W容纳在盒台21上的密封容器6中，并将其输送到用于形成抗蚀剂的装置A1外的分析器A2 模式。 通过使用诸如TOF-SIMS等的分析部分来分析晶片W的表面上的离子质量，例如CH 3 Si +，C 3 H 9 Si +，C 3 H 9 Si-等，由此分析设备A2测量量 的HMDS（六甲基二硅氮烷）。因此，可以测量晶片W的表面上的一定量的HMDS，并且以高可靠性评价疏水处理条件。