公开(公告)号：KR102054017B1

公开(公告)日：2019-12-09

申请号：KR1020120100351

申请日：2012-09-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오자와유스케 ,  오타케히로토 ,  스즈키에이지 ,  쿠마르카우식 ,  메츠앤드류더블유.

IPC: H01L21/3065

公开(公告)号：KR1020130028873A

公开(公告)日：2013-03-20

申请号：KR1020120100351

申请日：2012-09-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오자와유스케 ,  오타케히로토 ,  스즈키에이지 ,  쿠마르카우식 ,  메츠앤드류더블유.

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32247

Abstract: PURPOSE: A dry metal etching method is provided to etch aluminum, aluminum alloy, and aluminum oxide which are formed on a substrate. CONSTITUTION: A substrate including an aluminum layer is placed in a plasma processing system(210). Plasma is generated from process composition containing halogen(220). The aluminum layer is etched by plasma(230). The surface of the aluminum layer is oxidized under an oxygen atmosphere(240). The etching rate of the aluminum layer is controlled by an oxidation process. [Reference numerals] (210) Step of arranging a substrate including an aluminum layer in a plasma processing system; (220) Step of generating plasma from a process composition containing halogen; (230) Step of etching the aluminum layer by exposing the substrate to the plasma; (240) Step of exposing the substrate to an Oxygen-containing environment

Abstract translation: 目的：提供一种干法蚀刻方法来蚀刻形成在基底上的铝，铝合金和氧化铝。 构成：将包括铝层的基板放置在等离子体处理系统（210）中。 等离子体由含有卤素（220）的工艺组合物产生。 通过等离子体（230）蚀刻铝层。 铝层的表面在氧气氛（240）下被氧化。 通过氧化工艺控制铝层的蚀刻速率。 （附图标记）（210）在等离子体处理系统中配置包括铝层的基板的工序; （220）从含有卤素的工艺组合物产生等离子体的步骤; （230）通过将衬底暴露于等离子体来蚀刻铝层的步骤; （240）将基板暴露于含氧环境的步骤