公开(公告)号：KR101098123B1

公开(公告)日：2011-12-26

申请号：KR1020070029758

申请日：2007-03-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 난바히로모츠 ,  요시다마사히로 ,  무라카미유지 ,  나가야스히로시

IPC: C23F1/00

CPC classification number: H01L21/31055 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708

Abstract: 막이형성된기판을회전시키면서막 상에그 막을용해하는처리액을공급하여막을평탄화하는액 처리장치는기판을수평으로회전가능하게유지하는기판유지부와, 기판유지부를회전시키는회전기구와, 기판표면에처리액을공급하는액 공급기구를구비하고, 액공급기구는서로동일한처리액을토출하는제1 액토출노즐및 제2 액토출노즐을가지며, 제1 액토출노즐은제2 액토출노즐보다작은직경으로상대적으로토출유량이작고기판의회전방향으로처리액이토출되도록경사져있으며, 또한기판의중심과주연사이를이동할수 있다.

公开(公告)号：KR1020070097345A

公开(公告)日：2007-10-04

申请号：KR1020070029758

申请日：2007-03-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 난바히로모츠 ,  요시다마사히로 ,  무라카미유지 ,  나가야스히로시

IPC: C23F1/00

CPC classification number: H01L21/31055 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67063 ,  B05D1/005 ,  C23F1/08

Abstract: A liquid treatment apparatus and a liquid treatment method that can dissolve a film formed on a substrate at an excellent accuracy even on an end portion's face of the substrate, can hardly generate non-uniformity of dissolution due to splashing of a treatment solution, and can reduce the consumption amount of the treatment solution, and a storage medium that stores a program for performing the method are provided. As a liquid treatment apparatus(100) for planarizing the film by supplying onto the film a treatment solution for dissolving a film on a substrate(W) while rotating the substrate, the apparatus comprises: a substrate holding part(1) for holding the substrate horizontally and rotatably; a rotation mechanism(2) for rotating the substrate holding part; and a liquid supply mechanism(4) for supplying the treatment solution onto a surface of the substrate, wherein the liquid supply mechanism includes a first liquid discharge nozzle(21) and a second liquid discharge nozzle(22) that discharge the same treatment solution, the first liquid discharge nozzle has a smaller diameter and has a smaller discharge flow rate as compared with the second liquid discharge nozzle, and the first liquid discharge nozzle is inclined to discharge the treatment solution in a rotational direction of the substrate, and is movable between the center of the substrate and the periphery thereof.

Abstract translation: 即使在基板的端部的表面上也可以以极好的精度溶解形成在基板上的膜的液体处理装置和液体处理方法几乎不能产生由于处理溶液飞溅而导致的不均匀的溶解，并且可以 减少治疗溶液的消耗量，并且提供存储用于执行该方法的程序的存储介质。 作为用于在旋转衬底的同时向膜上供给用于将膜溶解在衬底（W）上的处理溶液的平面化膜的液体处理设备（100），该设备包括：用于保持衬底的衬底保持部分（1） 水平和可旋转; 旋转机构（2），用于旋转所述基板保持部; 以及用于将处理液供给到基板的表面上的液体供给机构（4），其中，所述液体供给机构包括排出所述相同处理溶液的第一液体排出喷嘴（21）和第二液体排出喷嘴（22） 所述第一液体排出喷嘴与所述第二液体排出喷嘴相比具有较小的直径并且具有较小的排出流量，并且所述第一液体排出喷嘴倾斜以沿所述基板的旋转方向排出所述处理溶液， 基板的中心及其周边。

公开(公告)号：KR101061931B1

公开(公告)日：2011-09-02

申请号：KR1020070099728

申请日：2007-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나카모리미츠노리 ,  사이토유스케 ,  이시하라아키라 ,  다나카사토루 ,  무라카미유지

IPC: H01L21/304

CPC classification number: H01L21/30604 ,  H01L21/02019 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: 본 발명은 에칭 공정에 있어서 에칭액을 반복 사용하는 경우에도 피처리 기판에 대한 에칭율이 증가하는 일이 없고, 더욱이 건조 후 피처리 기판의 표면에 파티클이나 워터마크가 형성되는 것을 방지할 수 있는 기판 처리 방법, 기판 처리 장치, 및 기록 매체를 제공하는 것을 과제로 한다.
우선, 챔버 내에 제1 가스를 채운 상태에서 처리액을 챔버 내의 웨이퍼 표면에 공급하여 그 웨이퍼를 표면 처리한다. 이때, 챔버로부터 배출되는 처리액을 처리액 공급부로 되돌리도록 한다. 그 후, 챔버 내에 제1 가스보다도 습도가 낮은 제2 가스를 채운 상태에서 액막 형성용 유체를 챔버 내의 웨이퍼 표면에 공급함으로써 웨이퍼의 표면에 액막을 형성하여 이 웨이퍼의 표면을 건조한다.

Abstract translation: 基板，其上本发明不发生在重复使用在蚀刻过程中增加蚀刻溶液的情况下目标衬底的蚀刻速率，并且进一步能够防止颗粒或所述基板的表面上的水痕，并干燥以形成 处理方法，基板处理装置和记录介质。

公开(公告)号：KR1020080031799A

公开(公告)日：2008-04-11

申请号：KR1020070099728

申请日：2007-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나카모리미츠노리 ,  사이토유스케 ,  이시하라아키라 ,  다나카사토루 ,  무라카미유지

IPC: H01L21/304

CPC classification number: H01L21/30604 ,  H01L21/02019 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: A substrate processing method, a substrate processing device, and a recording medium are provided to restrain moisture sinking into a dry fluid which is supplied into a substrate by replacing a first gas into a second gas having low humidity within a chamber. A first-gas supplying step is performed for supplying a first gas from a first-gas supplying part into a chamber. When the chamber is filled with the first gas, a substrate processing step is performed for supplying a process liquid from a process-liquid supplying part onto a surface of a substrate to be processed in the chamber, so as to process the surface of the substrate to be processed, while the process liquid discharged from the chamber is returned to the process-liquid supplying part by a process-liquid collecting line. A second gas supplying step is performed for supplying a second gas whose humidity is lower than that of the first gas, from a second gas supplying part into the chamber, so as to replace the first gas in the chamber with the second gas. When the chamber is filled with the second gas, a drying step is performed for supplying a drying fluid from a drying-fluid supplying part onto the surface of the substrate to be processed, so as to dry the surface of the substrate to be processed.

Abstract translation: 提供基板处理方法，基板处理装置和记录介质，以通过将第一气体替换为室内具有低湿度的第二气体来抑制被供应到基板中的干燥流体的水分。 执行第一气体供给步骤，用于将第一气体从第一气体供应部件供应到室中。 当腔室填充有第一气体时，执行基板处理步骤，用于将处理液体从处理液体供应部件供应到在室中待处理的基板的表面上，以便处理基板的表面 待处理时，从室排出的处理液通过处理液收集管路返回到处理液供给部。 进行第二气体供给步骤，用于将第二气体的第二气体从第二气体供给部供给到室内，以将第二气体的湿度从第一气体的第二气体供给到第二气体中。 当腔室填充有第二气体时，执行干燥步骤，用于将干燥流体供给部件的干燥流体供给到待加工基板的表面上，以便干燥被处理基板的表面。