公开(公告)号：KR101893938B1

公开(公告)日：2018-08-31

申请号：KR1020120066637

申请日：2012-06-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고바야시아츠시 ,  미우라카즈유키 ,  야스무로아키라

IPC: H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/32522 ,  H01J37/32532

Abstract: 소비전력을억제할수 있는반도체제조장치를제공한다. 반도체제조장치(1)는, 처리공간(S)을구획하여형성하는처리용기(2)로서, 상면(2a)을가지는상기처리용기(2)와, 처리공간(S) 내에설치된재치대(3)와, 재치대(3)와대면하도록상기재치대의상방에설치된상부전극(20)과, 상부전극(20)을가열하는히터(35, 36)로서, 상부전극(20)의주위또한상면(2a)의하방에설치된상기히터(35, 36)와, 상면(2a)에탑재되는단열부재(50)를구비하고, 단열부재(50)는, 판상부(51)와, 당해판상부(51)의일방의주면(51a)측에설치되는단열부(52)를포함한다.

公开(公告)号：KR1020120140629A

公开(公告)日：2012-12-31

申请号：KR1020120066637

申请日：2012-06-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고바야시아츠시 ,  미우라카즈유키 ,  야스무로아키라

IPC: H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/32522 ,  H01J37/32532

Abstract: PURPOSE: An apparatus for manufacturing a semiconductor is provided to improve the thermal efficiency of a chamber by preventing heat radiation using an insulation part. CONSTITUTION: A processing container(2) partitions a processing space and includes a top side(2a). A holder(3) is installed in the processing space. A top electrode is installed in an upper direction of the holder to face the holder. A heater(35) heats the top electrode and is installed around the top electrode and on the lower side of the top side. An insulation member(50) is mounted on the top side and includes a planar part and an insulation part installed on the main side of the planar part. [Reference numerals] (11) Exhaust device; (26) Process gas supply unit; (39) Preheat gas supply unit; (40) Control unit

Abstract translation: 目的：提供一种用于制造半导体的装置，以通过防止使用绝缘部件的散热来改善腔室的热效率。 构成：处理容器（2）分隔处理空间并包括顶侧（2a）。 支架（3）安装在处理空间中。 顶部电极安装在保持器的上方以面对支架。 加热器（35）加热顶部电极并且安装在顶部电极周围以及顶部侧的下侧。 绝缘构件（50）安装在顶侧，并且包括平面部分和安装在平面部分的主侧上的绝缘部分。 （附图标记）（11）排气装置; （26）工艺气体供应单元; （39）预热供气装置; （40）控制单元

公开(公告)号：KR1020070110499A

公开(公告)日：2007-11-19

申请号：KR1020077019468

申请日：2006-06-22

Applicant: 가부시키가이샤 후지킨 ,  고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  사이토마사히토 ,  히노쇼이치 ,  시마즈츠요시 ,  미우라카즈유키 ,  니시노코우지 ,  나가세마사아키 ,  스기타카츠유키 ,  히라타카오루 ,  도히료우스케 ,  히로세타카시 ,  시노하라츠토무 ,  이케다노부카즈 ,  이마이토모카즈 ,  요시다토시히데 ,  타나카히사시

IPC: G05D7/00

CPC classification number: G05D7/0641 ,  G01F1/363 ,  G01F1/6842 ,  G01F1/6847 ,  G01F5/005 ,  G01F7/005 ,  G05D7/0635 ,  G05D7/0647 ,  G05D23/1927 ,  Y10T137/0379 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/8593 ,  Y10T137/86734 ,  Y10T137/86815 ,  Y10T137/87265 ,  Y10T137/87314 ,  Y10T137/8741 ,  Y10T137/87499 ,  Y10T137/87684

Abstract: A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice (8) is calculated as Qc = KP1 (K is a proportionality factor) or Qc = KP2m(P1-P2)n (K is a proportionality factor and m and n are constants) by using a pressure P1 on the upstream side of the orifice and a pressure P2 on the downstream side of the orifice. A fluid passage between the downstream side of the control valve of the flow control device and a fluid feed pipe is formed of at least two or more fluid passages positioned parallel with each other. Orifices with different fluid flow characteristics are interposed in the fluid passages positioned parallel with each other. For the control of the fluid in a small flow area, the fluid in the small flow area is allowed to flow to one orifice. For the control of the flow in the large flow area, the fluid in the large flow area is allowed to flow to the other orifice by switching the fluid passages.

Abstract translation: 一种压力式流量控制装置，通过精确地控制在大流量范围内的流体的流动，能够减小尺寸和安装成本。 具体地说，在孔（8）中流动的流体的流量被计算为Qc = KP1（K是比例因子）或Qc = KP2m（P1-P2）n（K是比例因子，m和n是常数） 通过使用孔口上游侧的压力P1和孔口下游侧的压力P2。 在流量控制装置的控制阀的下游侧和流体供给管之间的流体通道由彼此平行定位的至少两个或更多个流体通道形成。 具有不同流体流动特性的孔口插入彼此平行定位的流体通道中。 为了控制小流量区域中的流体，允许小流量区域中的流体流到一个孔口。 为了控制大流量区域中的流动，通过切换流体通道允许大流量区域中的流体流向另一个孔口。