公开(公告)号：KR1020140103844A

公开(公告)日：2014-08-27

申请号：KR1020140014743

申请日：2014-02-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시카와준 ,  노자와도시히사 ,  마츠모토나오키 ,  벤첵피터엘지

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

Abstract: A plasma processing apparatus of one embodiment includes a process chamber which divides a process space, a batch unit, and an antenna for microwave introduction. The batch unit has a batch region for batching an object received in the process chamber. The antenna has a dielectric window installed on the batch unit. The dielectric window has a lower surface region which touches the process space. The lower surface region has a ring shape to limit a region for receiving a surface wave in the upper region of the edge of the batch region.

Abstract translation: 一个实施例的等离子体处理装置包括分隔处理空间的处理室，批量单元和用于微波引入的天线。 批量单元具有用于对在处理室中接收的物体进行批处理的批处理区域。 天线具有安装在批量单元上的电介质窗口。 电介质窗口具有接触处理空间的下表面区域。 下表面区域具有环状，以限制在批间隔区域的边缘的上部区域中接收表面波的区域。