公开(公告)号：KR101623236B1

公开(公告)日：2016-05-20

申请号：KR1020130111324

申请日：2013-09-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이토나가마사시 ,  사노요헤이

IPC: H01L21/3065

CPC classification number: G03F7/36

Abstract: 본발명의기판처리장치및 가스공급장치는, 상압분위기하에서가스공급부로부터기판에대하여처리가스를공급하여처리를행함에있어서, 기판면내의처리의균일성을높게할 수있는기술을제공하는것이다. 본발명은, 가스공급부에대해서, 상류측이공통의제1 가스공급구에연통되고, 도중에서분기되어하류측이상기복수의제1 가스토출구로서개구되는제1 가스유로와, 상류측이공통의제2 가스공급구에연통되며, 도중에서분기되어하류측이상기복수의제2 가스토출구로서개구되고, 상기제1 가스유로와구획된제2 가스유로를구비하도록구성한다. 그리고, 제1 가스공급구로부터복수의제1 가스토출구의각각에이르기까지의가스의통류시간이서로맞춰지며, 상기제2 가스공급구로부터상기복수의제2 가스토출구의각각에이르기까지의가스의통류시간이서로맞춰지도록, 분기된제1 가스유로및 제2 가스유로의유로길이및 유로직경을설정한다.

公开(公告)号：KR101878992B1

公开(公告)日：2018-07-16

申请号：KR1020120060357

申请日：2012-06-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사노요헤이 ,  다카키야스히로

IPC: H01L21/027 ,  H01L21/02

Abstract: HMDS 가스에의한기판의소수화처리를효율적으로행한다. 처리용기(110) 내에배치된웨이퍼를소수화처리하는접착유닛(41)은, 상부가개구하는처리용기(110)와, 처리용기(110)의개구를덮는덮개(111)와, 웨이퍼(W)를배치하는배치대(112)와, HMDS 가스및 퍼지가스를공급하는가스공급부(122)와, 웨이퍼(W)의상방이며, 웨이퍼(W)의중앙부에대향하여마련된중심배기부(140)와, 웨이퍼(W)보다외방에마련된외주배기부(150)를갖고있다.

公开(公告)号：KR1020140040014A

公开(公告)日：2014-04-02

申请号：KR1020130111324

申请日：2013-09-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이토나가마사시 ,  사노요헤이

IPC: H01L21/3065

CPC classification number: G03F7/36 ,  H01L21/3065 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0273 ,  H01L21/205 ,  H01L21/302 ,  H01L21/30621 ,  H01L21/76825 ,  H01L21/76826 ,  H05H1/46

Abstract: The present invention relates to a substrate processing device and a gas supplying device capable of improving the uniformity of processing in a substrate plane when supplying processing gas from a gas supplying part to a substrate for processing under atmospheric pressure atmosphere. The present invention comprises a first gas fluid path wherein an upper side is connected to a common first gas supplying hole and being separated for a lower side to be opened as multiple first gas discharging holes; and a second gas fluid path separated from the first gas fluid path wherein an upper side is connected to a common second gas supplying hole and being separated for a lower side to be opened as multiple second gas discharging holes for the gas supplying part. A fluid path length and a fluid path diameter is configured for the flow-through times of gases from the first gas supplying hole to multiple first gas discharging holes to be set and for the flow-through times of gases from the second gas supplying hole to multiple first gas discharging holes to be set. [Reference numerals] (2) Processing container; (31) Cover; (5) Gas supplying part

Abstract translation: 本发明涉及一种基板处理装置和气体供给装置，当将气体供给部件的处理气体供给到在大气压气氛下进行处理的基板时，能够提高基板面的加工的均匀性。 本发明包括第一气体流体路径，其中上侧连接到共同的第一气体供给孔，并且作为多个第一气体排出孔而被分隔开以被打开的下侧; 以及与第一气体流路分离的第二气体流路，其中上侧连接到共同的第二气体供给孔，并且作为用于气体供应部的多个第二气体排出孔而被分离以供打开的下侧。 流体路径长度和流体路径直径被构造成用于从第一气体供给孔到多个第一气体排出孔的流通时间以及来自第二气体供给孔的气体的流通时间 要设置多个第一个排气孔。 （附图标记）（2）加工容器; （31）封面; （5）供气部

公开(公告)号：KR1020120139550A

公开(公告)日：2012-12-27

申请号：KR1020120060357

申请日：2012-06-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사노요헤이 ,  다카키야스히로

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0274 ,  B05C9/10 ,  B05D3/0413

Abstract: PURPOSE: A hydrophobizing device, a hydrophobizing method, and a computer memory are provided to efficiently hydrophobize a substrate with HMDS(hexa methyl disilazane) gas using a central exhaust part. CONSTITUTION: A container(110) includes an opening. A cover covers the opening of the container. An arrangement stand arranges a wafer(W). A gas supply unit supplies HMDS gas and purge gas. A central exhaust part(140) is located on the upper side of the wafer and faces the center of the wafer. An external exhaust part(150) is formed outside the wafer.

Abstract translation: 目的：提供疏水化装置，疏水化方法和计算机存储器，以使用中央排气部分使HMDS（六甲基二硅氮烷）气体有效地疏水化底物。 构成：容器（110）包括开口。 盖子盖住容器的开口。 布置台布置晶片（W）。 气体供应单元提供HMDS气体和吹扫气体。 中心排气部分（140）位于晶片的上侧并面向晶片的中心。 外部排出部分（150）形成在晶片外部。