公开(公告)号：KR1020140071916A

公开(公告)日：2014-06-12

申请号：KR1020130148269

申请日：2013-12-02

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하타케야마신이치 ,  사토요시토모 ,  타시로카즈유키 ,  키시타나오후미

IPC: H01L21/027

CPC classification number: H01L21/02282 ,  H01L21/6715 ,  H01L21/0273

Abstract: Provided are a periphery coating apparatus which can efficiently form a coating layer with sufficiently uniform thickness, on only the periphery of a substrate, a periphery coating method and a storage medium for the same. A periphery coating unit performs a scan in control which rotates a wafer (W) and moves a resist solution nozzle (27) from the outside of the periphery (Wb) of the wafer (W) to the periphery (Wc) of the wafer (W) while discharging a resist solution from the resist solution nozzle (27), and a scan out control which rotates the wafer (W) and moves the resist solution nozzle (27) from the periphery (Wc) of the wafer (W) to the outside of the periphery (Wb) of the wafer (W) while discharging the resist solution from the resist solution nozzle (27). When the scan out control is carried out, the resist solution nozzle (27) is moved at a velocity (V2) which is lower than a velocity (V3) at which the resist solution moves to the periphery (Wc) of the wafer (W).

Abstract translation: 本发明提供一种能够有效地形成具有足够均匀厚度的涂层的外围涂布装置，仅在基板的周围，周边涂布方法和用于其的存储介质。 周边涂布单元执行扫描，其使晶片（W）旋转并使抗蚀剂溶液喷嘴（27）从晶片（W）的周边（Wb）的外侧移动到晶片的周边（Wc）（Wc） 在从抗蚀剂溶液喷嘴（27）排出抗蚀剂溶液的同时，将晶片（W）旋转并将抗蚀剂溶液喷嘴（27）从晶片（W）的周边（Wc）移动到所述扫描输出控制器 在从抗蚀剂溶液喷嘴（27）排出抗蚀剂溶液的同时，在晶片（W）的外周（Wb）的外侧。 当执行扫描输出控制时，抗蚀剂溶液喷嘴（27）以比抗蚀剂溶液移动到晶片（W）的周边（Wc）的速度（V3）低的速度（V2）移动 ）。

公开(公告)号：KR1020170092457A

公开(公告)日：2017-08-11

申请号：KR1020170010151

申请日：2017-01-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토요시토모

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/324 ,  H01L21/47 ,  H01L21/67

Abstract: 본발명은레지스트후막의형상을컨트롤하면서험프(hump)를제거하는것을목적으로한다. 웨이퍼(W)의처리방법은, 웨이퍼(W)의표면(Wa)에도포액을공급하여도포막을형성하는제1 공정과, 유기용제를노즐(46)로부터토출해서도포막의둘레가장자리부에공급하여, 상기둘레가장자리부중 볼록형상으로솟아오른험프부를녹여도포막중 다른부분과같은정도의두께로고르게하는제2 공정과, 제2 공정후에도포막을가열하여, 도포막이고화(固化)된고화막을형성하는제3 공정과, 유기용제를노즐(46)로부터토출해서상기고화막의둘레가장자리부에공급하여, 상기둘레가장자리부를녹여기판상으로부터제거하는제4 공정을포함한다.

Abstract translation: 本发明旨在在控制抗蚀剂厚膜的形状的同时去除隆起。 处理晶片W的方法包括：第一步骤，向晶片W的表面Wa供给涂布液以形成涂布膜;以及即使当有机溶剂从喷嘴46排出时，也向涂布膜的周边供应有机溶剂的步骤 的均匀的大约相同，并且外周涂层溶解的部分隆起边缘bujung凸膜上升与其它部件，并且所述第二通过步骤之后加热覆盖膜厚度的第二步骤，形成doengo屏膜的涂布膜固化（固化） 第四步，从喷嘴46排出有机溶剂并将有机溶剂供给到固化膜的周边以熔化周边并从基片上除去有机溶剂。