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    에칭 방법
    2.
    发明公开
    에칭 방법 审中-实审
    蚀刻方法

    公开(公告)号：KR1020140011992A

    公开(公告)日：2014-01-29

    申请号：KR1020130085473

    申请日：2013-07-19

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 마루야마코지 ,  야마모토미키오

    IPC: H01L21/3065 ,  H01L21/205

    CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3081 ,  H01L21/76898

    Abstract: A substrate in which a semiconductor device is formed is smoothly etched. Provided is the etching method for etching the substrate from the other side of a silicon layer supported by a support substrate while the semiconductor device is formed on the surface. Plasma is formed by supplying a process gas containing the mixed gas in which the flow ratio of a fluorine compound gas, an oxygen gas, and a silicon tetrafluoride gas is 2 : 1 : 1.5 and a process gas containing the mixed gas in which the ratio of at least one among the oxygen gas and the silicon tetrafluoride gas is greater based on the fluorine compound gas relative to the 2 : 1 : 1.5 ratio into a chamber. Provided is the etching method including a main etching process for etching the substrate by the formed plasma and an over etching process for greatly etching the substrate by the plasma through applying a high frequency bias less than 400 kHz after the main etching process. [Reference numerals] (AA) Flow ratio of 0_2 gas to SF_6 gas; (BB) Top CD; (CC) Under CD; (DD) Undercut(U)0.8 쨉m; (EE,FF) Undercut(U) 0 쨉m; (GG) Undercut(U)=(under CD - top CD) / 2 쨌쨌쨌 (A); (HH) Undercut(U) 0.4 쨉m; (II) Flow ratio of SiF_4 gas to SF_6 gas

    Abstract translation: 其中形成半导体器件的衬底被平滑地蚀刻。 提供了在半导体器件形成在表面上时从由支撑衬底支撑的硅层的另一侧蚀刻衬底的蚀刻方法。 通过供给包含氟化合物气体，氧气和四氟化硅气体的流量比为2:1:1.5的混合气体的处理气体和含有混合气体的混合气体的处理气体而形成等离子体， 基于氟化合物气体相对于室中的2:1:1.5比例，氧气和四氟化硅气体中的至少一个更大。 提供的蚀刻方法包括用于通过形成的等离子体蚀刻衬底的主蚀刻工艺和用于通过在主蚀刻工艺之后施加小于400kHz的高频偏压等离子体来大大蚀刻衬底的过蚀刻工艺。 （附图标记）（AA）0_2气体与SF_6气体的流量比; （BB）顶级CD; （CC）在CD下; （DD）底切（U）0.8쨉m; （EE，FF）底切（U）0쨉m; （GG）底切（U）=（CD-顶部CD）/ 2쨌쨌쨌（A）; （HH）底切（U）0.4쨉m; （II）SiF_4气体与SF_6气体的流量比

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