公开(公告)号：KR102042588B1

公开(公告)日：2019-11-08

申请号：KR1020120033518

申请日：2012-03-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  야마다노리카즈 ,  오세타케시

IPC: H05H1/46 ,  H01L21/3065

公开(公告)号：KR1020120112260A

公开(公告)日：2012-10-11

申请号：KR1020120033518

申请日：2012-03-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  야마다노리카즈 ,  오세타케시

IPC: H05H1/46 ,  H01L21/3065

CPC classification number: H01J37/32697 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32366 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32724 ,  H01J2237/327

Abstract: PURPOSE: A substrate processing method is provided to control intensity of the intensity of anisotropy and isotropy in etching by adjusting a rate of an output value from a second high frequency power and an output value from a direct current voltage applying unit. CONSTITUTION: A process chamber(15) has an depressurized internal space. A placement table(12) mounts a substrate in the process chamber. A first high frequency power source(18) applies a high frequency voltage having a relatively high frequency. A second high frequency power source(20) applies the high frequency voltage having a relatively frequency on the placement table. A direct current voltage applying unit(23) applies a direct current voltage of a square wave form to the placement table. A connection changeover switch connects the second high frequency power source with the direct current voltage applying unit from the placement table.

Abstract translation: 目的：提供一种基板处理方法，用于通过从第二高频功率和直流电压施加单元的输出值调节输出值的速率来控制蚀刻中各向异性强度和各向同性的强度。 构成：处理室（15）具有减压的内部空间。 放置台（12）将基板安装在处理室中。 第一高频电源（18）施加具有较高频率的高频电压。 第二高频电源（20）在放置台上施加具有相对频率的高频电压。 直流电压施加单元（23）将方波形式的直流电压施加到放置台。 连接切换开关从放置台将第二高频电源与直流电压施加单元连接。