公开(公告)号：KR1020140064666A

公开(公告)日：2014-05-28

申请号：KR1020130140481

申请日：2013-11-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠카타카히사 ,  오가타노부히로 ,  마루모토히로시 ,  와키야마테루후미

IPC: H01L21/302

CPC classification number: H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67051

Abstract: The supply amount of a clean gas is reduced without deteriorating process performance. The amount of the clean gas (70) supplied from a clean gas supply apparatus (70,78) to the inner space of a housing (60) when a liquid process is performed on a substrate (W) is less than that of a clean gas (78) of low humidity supplied from the clean gas supply apparatus when a drying process is performed on the substrate. In addition, the amount of a gas discharged through a housing discharge path (64) when a liquid process is performed is less than that of a gas discharged through the housing discharge path when a drying process is performed.

Abstract translation: 清洁气体的供给量降低，而不会降低工艺性能。 当在基板（W）上执行液体处理时，从清洁气体供应装置（70,78）供应到壳体（60）的内部空间的清洁气体（70）的量小于清洁气体 在对基板进行干燥处理时，从清洁气体供给装置供给的低湿气体（78）。 此外，当执行液体处理时通过壳体排放路径（64）排出的气体的量小于当进行干燥处理时通过壳体排出路径排出的气体的量。

公开(公告)号：KR101949722B1

公开(公告)日：2019-02-19

申请号：KR1020130140481

申请日：2013-11-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠카타카히사 ,  오가타노부히로 ,  마루모토히로시 ,  와키야마테루후미

IPC: H01L21/302