公开(公告)号：KR102168064B1

公开(公告)日：2020-10-20

申请号：KR1020140019300

申请日：2014-02-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나가미코이치 ,  야마다노리카즈 ,  곤다이타다시 ,  요시다코우이치

IPC: H05H1/46 ,  H01L21/3065

公开(公告)号：KR1020140104380A

公开(公告)日：2014-08-28

申请号：KR1020140019300

申请日：2014-02-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나가미코이치 ,  야마다노리카즈 ,  곤다이타다시 ,  요시다코우이치

IPC: H05H1/46 ,  H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32706 ,  H01J37/32944

Abstract: The present invention efficiently, stably, and definitely prevents abnormal discharge between an RF electrode (susceptor), which loads a substrate to be processed, and the substrate by using an electrostatic chuck. At a first timing after a semiconductor wafer (W) is mounted on the electrostatic chuck (38), the susceptor (12) is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power (HF) for plasma generation is applied to the susceptor (12), and a processing gas is excited into plasma in a chamber (10). From a third timing after the second timing, a first high frequency power (LF) for ion injection is applied to the susceptor (12), and a self-bias (−Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage (−BDC) corresponding to the self-bias (−Vdc) is applied to the susceptor (12). From the fifth timing after the fourth timing, a positive first DC voltage (ADC) is applied to an inner electrode (42) of the electrostatic chuck (38).

Abstract translation: 本发明通过使用静电卡盘有效地，稳定地并且可靠地防止加载被处理基板的RF电极（基座）与基板之间的异常放电。 在将半导体晶片（W）安装在静电卡盘（38）上之后的第一定时，基座（12）从电接地状态切换到浮动状态。 从第一定时之后的第二定时，将用于等离子体产生的第二高频功率（HF）施加到基座（12），处理气体在腔室（10）中激发成等离子体。 从第二定时之后的第三时刻开始，对基座（12）施加用于离子注入的第一高频功率（LF），产生自偏压（-Vdc）。 从靠近第三定时的第四定时，将与自偏压（-Vdc）相对应的负的第二直流电压（-BDC）施加到基座（12）。 从第四定时之后的第五时刻开始，对静电卡盘（38）的内部电极（42）施加正的第一直流电压（ADC）。