公开(公告)号：KR1020020066198A

公开(公告)日：2002-08-14

申请号：KR1020020007113

申请日：2002-02-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 우시오다조이치 ,  사토고이치 ,  사토요시츠토무 ,  이토히로미치

IPC: G02F1/13

CPC classification number: H01J37/32082 ,  C23C16/4581 ,  H01J2237/022 ,  Y10T279/23

Abstract: PURPOSE: A substrate-supporting table, a method for producing the substrate-supporting table and a processing system are provided to prevent ununiformity of etching and to prevent a substrate from being absorbed on the substrate-supporting table. CONSTITUTION: A plasma processing system has a susceptor(4) for supporting a substrate(G). A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film(6) formed on a base, and a plurality of protrusions(7) formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

Abstract translation: 目的：提供基板支撑台，基板支撑台的制造方法以及处理系统，以防止蚀刻不均匀，防止基板被吸收在基板支撑台上。 构成：等离子体处理系统具有用于支撑基板（G）的基座（4）。 将处理气体供应到处理容器中以产生处理气体的等离子体。 基座具有形成在基底上的电介质膜（6）和形成在膜上的多个突起（7）。 通过经由具有多个圆形孔的孔板将陶瓷热喷涂到电介质膜上而形成基座的突出部。

公开(公告)号：KR100755594B1

公开(公告)日：2007-09-06

申请号：KR1020010014236

申请日：2001-03-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토요시츠토무 ,  이토히로미치

IPC: H01L21/3065

Abstract: 본 발명에 의하면, 플라즈마 에칭 장치는 서로 대향하도록 하부 전극(5) 및 상부 전극(21)이 내부에 배치된 처리실(2)을 포함한다. 에칭시에는 하부 전극(5)에 피처리 기판 G를 탑재하여, 감압한 처리실(2) 내에 처리 가스를 도입함과 동시에, 상부 전극(21)에 RF 전력을 인가하여 플라즈마를 형성한다. 하부 전극(5) 상의 탑재면(5a)은 긴 변이 600㎜ 이상인 직사각형의 기판이 탑재되도록 형성된다. RF 전력의 주파수는 10㎒ 이상이고 13.56㎒ 미만으로 설정된다.

公开(公告)号：KR1020010092693A

公开(公告)日：2001-10-26

申请号：KR1020010014236

申请日：2001-03-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토요시츠토무 ,  이토히로미치

IPC: H01L21/3065

Abstract: PURPOSE: To provide a plasma processor and a plasma processing method, which can perform uniform processing on a large substrate with a uniform plasma. CONSTITUTION: First and second electrodes 21 and 5 are arranged in a chamber 2, so that they counterpose each other. A substrate to be processed G is placed on the second electrode 5 and processing gas is introduced into the chamber 2, whose pressure is reduced. High frequency power is given to the upper electrode 21, and a plasma is formed. For performing a plasma processing on the substrate G, a substrate mount 10 on the lower electrode 5 is constituted, in such a way that the rectangular substrate whose long side is not less than 600 mm or the square substrate, whose one side is not led than 600 mm is installed and the frequency of high-frequency power is set to a range of 10 MHz to 13.56 MHz.

Abstract translation: 目的：提供等离子体处理器和等离子体处理方法，其可以在具有均匀等离子体的大基板上进行均匀处理。 构成：第一和第二电极21和5布置在室2中，使得它们彼此抵接。 将待处理的基板G放置在第二电极5上，并且将处理气体引入压力降低的室2中。 向上部电极21施加高频电力，形成等离子体。 为了在基板G上进行等离子体处理，下部电极5上的基板安装件10构成为长边不小于600mm的矩形基板或其一侧未被引导的方形基板 安装了600mm以上，高频功率的频率设定在10MHz〜13.56MHz的范围。