公开(公告)号：KR1020120121361A

公开(公告)日：2012-11-05

申请号：KR1020120043163

申请日：2012-04-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라고오스께 ,  다까야나기고오지 ,  하따께야마신이찌 ,  가와까미고오헤이

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  B05C11/023 ,  B05D1/005 ,  G03F7/162 ,  G06F19/00 ,  H01L21/0271 ,  H01L21/6715 ,  H01L51/0003 ,  H01L2224/03418 ,  H01L21/0273 ,  B05C9/14 ,  B05C11/1005 ,  B05D3/02 ,  B05D5/04

Abstract: PURPOSE: A coating treatment apparatus, a coating developing treatment system, and a storage medium in which a program is recorded for implementing a coating treatment method are provided to reduce film thickness deviation within a surface of a substrate by forming a coating film using spin coating. CONSTITUTION: A substrate retention support(31) supports a substrate. A rotating unit(32) rotates the substrate. A supply part(43) supplies a coating solution on the surface of the substrate. A air current control board(63) is installed at a predetermined upper position of the substrate. The air current control board locally changes air currents above the substrate.

Abstract translation: 目的：提供一种涂布处理装置，涂布显影处理系统和存储介质，其中记录用于实施涂布处理方法的程序，以通过使用旋涂形成涂膜来减小基板表面内的膜厚偏差 。 构成：衬底保持支撑件（31）支撑衬底。 旋转单元（32）旋转衬底。 供给部（43）在基板的表面供给涂布液。 气流控制板（63）安装在基板的预定的上部位置。 气流控制板局部地改变衬底上方的气流。

公开(公告)号：KR1020120010121A

公开(公告)日：2012-02-02

申请号：KR1020110058788

申请日：2011-06-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라고오스께 ,  하따께야마신이찌

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  H01L21/0274 ,  G03F7/16

Abstract: PURPOSE: A painting processing method and apparatus, and a computer storage device are provided to uniformly spread painting liquid in the face of a substrate by controlling supply quantity of the painting liquid with small amount. CONSTITUTION: A substrate is rotated as the number of first revolutions. The substrate is rotated as the number of second revolutions by decelerating the revolution of the substrate. The number of second revolutions is less than the number of first revolutions. The substrate is rotated as the number of third revolutions by accelerating the substrate. The number of third revolutions is more than the number of second revolutions and less than the number of first revolutions. The substrate is rotated as the number of fourth revolutions by decelerating the revolution of the substrate. The number of fourth revolutions is less than the number of third revolutions. The substrate is rotated as the number of fifth revolutions by accelerating the substrate. The number of fifth revolutions is more than the number of fourth revolutions.

Abstract translation: 目的：通过控制少量涂布液的供给量，提供涂装处理方法和装置以及计算机存储装置，以均匀地涂布在基材表面上的涂布液。 构成：将基板旋转为第一转数。 通过使基板的旋转减速来使基板旋转为第二转数。 第二转的次数小于第一次转数。 基板通过加速基板而旋转为第三转数。 第三次革命的次数超过第二次转数，而不是第一次转数。 通过使基板的旋转减速来使基板旋转为第四转数。 第四次转数小于第三次转数。 基板通过加速基板而旋转为第五圈的数量。 第五次革命的次数超过第四次革命。

公开(公告)号：KR101676066B1

公开(公告)日：2016-11-14

申请号：KR1020120043163

申请日：2012-04-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라고오스께 ,  다까야나기고오지 ,  하따께야마신이찌 ,  가와까미고오헤이

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  B05C11/023 ,  B05D1/005 ,  G03F7/162 ,  G06F19/00 ,  H01L21/0271 ,  H01L21/6715 ,  H01L51/0003 ,  H01L2224/03418

Abstract: 본발명의과제는, 도포액을스핀도포법에의해도포하여막을형성할때에, 기판면내의임의의위치의막 두께를제어할수 있는동시에, 기판면내의막 두께편차를저감할수 있는도포처리장치를제공하는것이다. 회전하는기판의표면에도포액을공급하고, 공급한도포액을기판의외주측으로확산시킴으로써기판의표면에도포액을도포하는도포처리장치(23)에있어서, 기판을보유지지하는기판보유지지부(31)와, 기판보유지지부(31)에보유지지된기판을회전시키는회전부(32)와, 기판보유지지부(31)에보유지지된기판의표면에도포액을공급하는공급부(43)와, 기판보유지지부(31)에보유지지된기판의상방의소정위치에설치되어있고, 회전부(32)에의해회전하는기판의상방의기류를임의의위치에서국소적으로변화시키는기류제어판(63)을갖는다.

公开(公告)号：KR101612574B1

公开(公告)日：2016-04-14

申请号：KR1020110058788

申请日：2011-06-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라고오스께 ,  하따께야마신이찌

IPC: H01L21/027

CPC classification number: H01L21/6715

Abstract: 본발명의과제는, 기판상에도포액을도포할때에, 도포액의공급량을소량으로억제하면서, 기판면내에서균일하게도포액을도포하는것이다. 회전중인웨이퍼상에용제를공급하고, 웨이퍼를제6 회전수로회전시켜용제를확산시킨다(공정 S1). 웨이퍼의회전을제1 회전수까지가속시켜, 제1 회전수로웨이퍼를회전시킨다(공정 S2). 웨이퍼의회전을제2 회전수까지감속시켜, 웨이퍼(W)를제2 회전수로회전시킨다(공정 S3). 웨이퍼의회전을제3 회전수까지다시가속시켜, 제3 회전수로웨이퍼를회전시킨다(공정 S4). 웨이퍼의회전을제4 회전수인 0rpm 초과 500rpm 이하까지감속시켜, 제4 회전수로 1 내지 10초간웨이퍼를회전시킨다(공정 S5). 웨이퍼의회전을제5 회전수까지가속시켜, 제5 회전수로웨이퍼를회전시킨다(공정 S6). 공정 S2로부터공정 S3의도중까지, 혹은공정 S2 동안웨이퍼의중심에레지스트액을연속적으로공급한다.