公开(公告)号：KR101000946B1

公开(公告)日：2010-12-13

申请号：KR1020090011848

申请日：2009-02-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야에가시히데타미 ,  시무라사토루 ,  하야카와타카시

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0338 ,  H01L27/105 ,  H01L27/1052

Abstract: A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.

公开(公告)号：KR1020090088815A

公开(公告)日：2009-08-20

申请号：KR1020090011848

申请日：2009-02-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야에가시히데타미 ,  시무라사토루 ,  하야카와타카시

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0338 ,  H01L27/105 ,  H01L27/1052 ,  G03F7/70433 ,  H01L21/3086

Abstract: A method for forming a pattern, and a method and an apparatus for manufacturing a semiconductor device are provided to simplify a manufacturing process and to reduce a manufacturing cost by forming a fine pattern thinner than the exposure limit. A first pattern is formed by patterning a first mask material layer comprised of the photoresist(201). A width of a first pattern is reduced and a predetermined width is formed in a trimming process(202). A boundary layer made of the material removed selectively by the photoresist is formed in the surface of the first pattern(203). A second mask material layer made of the material to selectively remove the boundary layer is formed in the surface of the boundary layer. A part of the second mask material layer is removed to expose the upper part of the boundary layer(205). A second pattern with the second mask material layer in the upper part is formed in a boundary layer etching process(206).

Abstract translation: 提供一种形成图案的方法，以及用于制造半导体器件的方法和装置，以简化制造工艺并通过形成比暴露极限更薄的精细图案来降低制造成本。 通过图案化由光致抗蚀剂（201）构成的第一掩模材料层来形成第一图案。 第一图案的宽度减小，并且在修剪处理（202）中形成预定宽度。 由第一图案（203）的表面形成由光致抗蚀剂选择性地除去的材料制成的边界层。 在边界层的表面形成由选择性去除边界层的材料制成的第二掩模材料层。 去除第二掩模材料层的一部分以暴露边界层（205）的上部。 在边界层蚀刻工艺（206）中形成具有上部的第二掩模材料层的第二图案。