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公开(公告)号:KR100701578B1
公开(公告)日:2007-04-02
申请号:KR1020010004660
申请日:2001-01-31
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor: 키타노준이치 , 마츠야마유지 , 키타노타카히로 , 카타노타카유키 , 마츠이히데후미 , 스즈키요 , 야마시타마사미 , 아오야마토루 , 이와키히로유키 , 시무라사토루 , 데구치마사토시 , 요시하라코우스케 , 이이다나루아키
IPC: H01L21/30
CPC classification number: H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
Abstract: 도포현상 처리시스템에 있어서 경계판에 의해 나누어진 각 영역, 즉 카세트 스테이션, 처리 스테이션 및 인터페이스부의 상부에 각 영역 내로 불활성 기체를 공급하는 기체 공급부를 각각 설치한다. 상기 각 영역의 하부에는 각 영역 내의 분위기를 배기하기 위한 배기관을 설치한다. 각 기체 공급장치로 산소 등의 불순물이나 미립자를 포함하지 않는 불활성 기체를 각 영역 내로 공급하고 각 영역 내의 분위기를 배기관으로 배기함으로써 각 영역 내의 분위기를 청정한 상태로 유지한다.
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公开(公告)号:KR1020140109815A
公开(公告)日:2014-09-16
申请号:KR1020140023471
申请日:2014-02-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: G03F7/38 , G03F7/265 , H01L21/0273 , H01L21/6715 , H01L21/67167 , H01L21/6719 , H01L21/0274
Abstract: An objective of the present invention is to suitably form a resist pattern on a substrate. A resist film (401) is formed on a film to be treated (400) of a wafer (W) [FIG. 8 (a)]. An exposed portion (402) and an unexposed portion (403) are formed on the resist film (401) by exposing the resist film (401) as a predetermined pattern [FIG. 8(b)]. Alcohol enters the exposed portion (402), and metal (404) is infiltrated through the alcohol in the exposed portion (402) [FIG. 8(c)]. The metal accumulated on the unexposed portion (403). The unexposed portion (403) is removed, and a resist pattern (405) is formed on the wafer (W) [FIG. 8(d)]. The film to be treated (400) is etched using the resist pattern (405) as a mask, and a predetermined pattern (406) is formed in an appropriate shape in the film to be treated (400).
Abstract translation: 本发明的目的是在衬底上适当地形成抗蚀剂图案。 在晶片(W)的待处理膜(400)上形成抗蚀剂膜(401)。 8(a)]。 通过使抗蚀剂膜(401)以预定图案曝光,在抗蚀剂膜(401)上形成曝光部分(402)和未曝光部分(403)。 图8(b)]。 醇进入暴露部分(402),并且金属(404)通过暴露部分(402)中的醇渗透。 图8(c)]。 积存在未曝光部分(403)上的金属。 去除未曝光部分(403),并且在晶片(W)上形成抗蚀图案(405)。 图8(d)〕。 使用抗蚀剂图案(405)作为掩模蚀刻待处理的膜(400),并且在待处理膜(400)中以适当的形状形成预定图案(406)。
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公开(公告)号:KR1020140078551A
公开(公告)日:2014-06-25
申请号:KR1020130154460
申请日:2013-12-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/32
CPC classification number: G03F7/168
Abstract: The objective of the present invention is to properly form a metal-containing layer on a substrate. An organic solution is supplied from an organic solution nozzle (143) onto a wafer (W) and an organic layer (F) is formed on the wafer (W) ((a) of figure 6). A metal-containing solution including metal (M) dissolved in alcohol is supplied from a metal-containing nozzle (150) to the wafer (W), alcohol is supplied to the organic layer (F), and the metal (M) is infiltrated into the organic layer (F) through the alcohol, thereby forming a metal-containing layer (C) on the wafer (W) ((b) of figure 6).
Abstract translation: 本发明的目的是在衬底上适当地形成含金属层。 将有机溶液从有机溶液喷嘴(143)供应到晶片(W)上,并且在晶片(W)(图6的(a))上形成有机层(F)。 将包含金属(M)的含金属溶液从含金属的喷嘴(150)供给到晶片(W),向有机层(F)供给醇,并且金属(M)被渗透 通过醇进入有机层(F),从而在晶片(W)(图6的(b))上形成含金属层(C)。
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公开(公告)号:KR1020070026056A
公开(公告)日:2007-03-08
申请号:KR1020060081611
申请日:2006-08-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051
Abstract: A substrate cleaning apparatus and a substrate cleaning method are provided to dry completely a substrate without the existence of water marks by using a driving unit. A substrate cleaning apparatus includes a substrate holding unit, a cleaning solution nozzle, and a first driving unit. The substrate holding unit is used for keeping a substrate in a leveling state and rotating the substrate. The cleaning nozzle(5) is used for supplying a cleaning solution onto an upper surface of the substrate. The first driving unit is used for moving the cleaning nozzle from a center portion of the substrate to a peripheral portion.
Abstract translation: 提供基板清洗装置和基板清洗方法,通过使用驱动单元完全干燥基板而不存在水痕。 基板清洗装置包括基板保持单元,清洗溶液喷嘴和第一驱动单元。 基板保持单元用于将基板保持在调平状态并旋转基板。 清洁喷嘴(5)用于将清洁溶液供应到基板的上表面上。 第一驱动单元用于将清洁喷嘴从基板的中心部分移动到周边部分。
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公开(公告)号:KR1020060090212A
公开(公告)日:2006-08-10
申请号:KR1020060068647
申请日:2006-07-21
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor: 키타노준이치 , 마츠야마유지 , 키타노타카히로 , 카타노타카유키 , 마츠이히데후미 , 스즈키요 , 야마시타마사미 , 아오야마토루 , 이와키히로유키 , 시무라사토루 , 데구치마사토시 , 요시하라코우스케 , 이이다나루아키
IPC: H01L21/027
CPC classification number: H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41 , G03F7/70875 , H01L21/67098
Abstract: 도포현상 처리시스템에 있어서 경계판에 의해 나누어진 각 영역, 즉 카세트 스테이션, 처리 스테이션 및 인터페이스부의 상부에 각 영역 내로 불활성 기체를 공급하는 기체 공급부를 각각 설치한다. 상기 각 영역의 하부에는 각 영역 내의 분위기를 배기하기 위한 배기관을 설치한다. 각 기체 공급장치로 산소 등의 불순물이나 미립자를 포함하지 않는 불활성 기체를 각 영역 내로 공급하고 각 영역 내의 분위기를 배기관으로 배기함으로써 각 영역 내의 분위기를 청정한 상태로 유지한다.
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公开(公告)号:KR1020020010442A
公开(公告)日:2002-02-04
申请号:KR1020010004660
申请日:2001-01-31
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor: 키타노준이치 , 마츠야마유지 , 키타노타카히로 , 카타노타카유키 , 마츠이히데후미 , 스즈키요 , 야마시타마사미 , 아오야마토루 , 이와키히로유키 , 시무라사토루 , 데구치마사토시 , 요시하라코우스케 , 이이다나루아키
IPC: H01L21/30
CPC classification number: H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
Abstract: PURPOSE: A substrate processing apparatus and method are provided to prevent an adhesion of fine impurities or particles on a substrate and to improve a uniformity of line-width between substrates. CONSTITUTION: On top of respective areas divided by partition plates, that is, a cassette station(2), a processing station(3), and an interface section(4) in a coating and developing processing system, gas supply sections(70,71,72) for supplying an inert gas into the respective areas are provided. Exhaust pipes(75,76,77) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes(75,76,77).
Abstract translation: 目的:提供基板处理装置和方法,以防止细小的杂质或颗粒附着在基板上并提高基板之间的线宽的均匀性。 构成:在涂覆和显影处理系统中,由分隔板(即,盒式磁带站(2)),处理站(3)和接口区段(4)分隔的各个区域之上, 71,72)用于将惰性气体供应到各个区域。 在各个区域的底部设置用于排出各区域的气氛的排气管(75,76,77)。 通过将不含杂质的惰性气体(例如氧气和细颗粒)从各个气体供应区域供应到各个区域并且从排气管(75)排出各个区域中的气氛,将各个区域中的气氛保持在清洁状态 ,76,77)。
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公开(公告)号:KR101959108B1
公开(公告)日:2019-03-15
申请号:KR1020157022381
申请日:2014-01-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/027 , H01L21/66 , H01L21/67 , H01L21/311
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公开(公告)号:KR101874526B1
公开(公告)日:2018-07-04
申请号:KR1020130090350
申请日:2013-07-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/0206 , B08B3/08 , H01L21/02041 , H01L21/02057 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/68728
Abstract: 패턴손상또는하지막의침식을억제하면서, 기판에부착한파티클을제거하는것이다. 실시예에따른기판세정장치는, 제 1 액공급부와제 2 액공급부를구비한다. 제 1 액공급부는, 휘발성분을포함하고기판상에막을형성하기위한처리액을기판으로공급한다. 제 2 액공급부는, 제 1 액공급부에의해기판으로공급되고, 휘발성분이휘발함으로써기판상에서고화또는경화한처리액에대하여처리액의전부를제거하는제거액을공급한다.
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公开(公告)号:KR101000946B1
公开(公告)日:2010-12-13
申请号:KR1020090011848
申请日:2009-02-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0337 , H01L21/0273 , H01L21/0338 , H01L27/105 , H01L27/1052
Abstract: A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.
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公开(公告)号:KR1020090088823A
公开(公告)日:2009-08-20
申请号:KR1020090011979
申请日:2009-02-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , G03F7/20
CPC classification number: H01L21/0337 , H01L27/105 , H01L27/1052 , H01L21/3086 , H01L21/31144
Abstract: A method for forming a pattern, and a method and an apparatus for manufacturing a semiconductor device are provided to reduce a manufacturing cost and to simplify a process by not performing a second exposure process. A first pattern(105) made of photoresist is formed. A boundary layer is formed in a sidewall part and an upper side of the first pattern. A second mask material layer(107) is formed to cover the surface of the boundary layer. A part of the second mask material layer is removed to expose the upper side of the boundary layer. A second pattern comprised of a second mask material layer is formed by removing the boundary layer. The width of the first pattern and the second pattern is formed with the predetermined width.
Abstract translation: 提供一种形成图案的方法,以及用于制造半导体器件的方法和装置,以降低制造成本,并且通过不执行第二曝光处理来简化处理。 形成由光致抗蚀剂制成的第一图案(105)。 边界层形成在第一图案的侧壁部分和上侧。 形成第二掩模材料层(107)以覆盖边界层的表面。 去除第二掩模材料层的一部分以暴露边界层的上侧。 通过除去边界层形成由第二掩模材料层构成的第二图案。 第一图案和第二图案的宽度以预定宽度形成。
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