公开(公告)号：KR1020080114553A

公开(公告)日：2008-12-31

申请号：KR1020080059547

申请日：2008-06-24

Applicant: 가부시키가이샤 코준도카가쿠 켄큐쇼 ,  도쿄엘렉트론가부시키가이샤

Inventor： 카도쿠라히데키미 ,  히가시신타로 ,  쿠보시마요시노리 ,  카와노유미코

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/316

CPC classification number: C07F17/00

Abstract: A manufacturing method of thin film containing strontium using raw material for forming film containing strontium oxide or strontium sulfide is provided to form a strontium containing thin film in which a content of K and Na is reduced by using CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition) with Sr(PrMe4Cp)2. A manufacturing method of thin film containing strontium using raw material for forming film containing strontium oxide or strontium sulfide uses a CVD(Chemical Vapor Deposition) or an ALD(Atomic Layer Deposition) with a Sr(PrMe4Cp)2, and forms a SrTiO3 film or a (Ba, Sr)TiO3 film by using the Sr(PrMe4Cp)2 as Sr supply source.

Abstract translation: 提供使用原料形成含有氧化锶或硫化锶的薄膜的含锶薄膜的制造方法，以形成含有锶的薄膜，其中通过使用CVD（化学气相沉积）或ALD（化学气相沉积）或ALD 原子层沉积）与Sr（PrMe4Cp）2。 使用原料形成含有氧化锶或硫化锶的薄膜的含锶的薄膜的制造方法使用具有Sr（PrMe4Cp）2的CVD（化学气相沉积）或ALD（原子层沉积），形成SrTiO 3膜或 通过使用Sr（PrMe4Cp）2作为Sr供应源的（Ba，Sr）TiO 3膜。

公开(公告)号：KR101498732B1

公开(公告)日：2015-03-04

申请号：KR1020080059547

申请日：2008-06-24

Applicant: 가부시키가이샤 코준도카가쿠 켄큐쇼 ,  도쿄엘렉트론가부시키가이샤

Inventor： 카도쿠라히데키미 ,  히가시신타로 ,  쿠보시마요시노리 ,  카와노유미코

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/316

CPC classification number: C07F17/00

Abstract: 본 발명은 실온∼50℃에서 액체이며, 증류 정제가 가능하고, 단량체로 증기압이 높으며, 대량 생산하기 쉬운 시클로펜타디에닐계 스트론튬 화합물에 의한 스트론튬 함유 박막을 형성하는 방법을 제공하는 것을 목적으로 한다.
Sr 공급원으로서, 비스(프로필테트라메틸시클로펜타디에닐)스트론튬을 이용하여 화학 기상 성장법 또는 원자층 퇴적법에 의해 SrTiO
3 또는 (Ba, Sr)TiO
3 막 등의 스트론튬 함유 박막을 형성한다.

公开(公告)号：KR1020080069918A

公开(公告)日：2008-07-29

申请号：KR1020080007009

申请日：2008-01-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가와노유미코 ,  가키모토아키노부 ,  가도쿠라히데키미 ,  히가시신타로

IPC: H01L21/31

CPC classification number: C23C16/409 ,  C23C16/45531 ,  C23C16/45553

Abstract: A film forming method of an SrTiO3 film is provided to carry out gasification of material at less than 200°C, to obtain uniform composition in the film, and to secure high throughput and high coverage which is effective for an electrode of a capacitor of an MIM(Metal Insulator Metal) structure. A film forming device(100) includes a cylindrical or box shaped process vessel(1). A mounting device(3) is mounted with a semiconductor wafer(W). A dividing wall(13) is formed at the outer perimeter of the mounting device. A curved part(14) is formed by bending the dividing wall horizontally. An inert gas purge room(15) is formed at the inside of the mounting device. Connection rods(12) are inserted into gaps. The mounting device is supported by a support arm(4). An L shaped lifter pin(5) is projected upward from a ring shaped support member(6). The support member is lifted up and down by a lifting rod(7). The lifting rod is moved up and down by an actuator(10). An inserted part of the lifting rod is covered by a bellows(9). A second gas purging gap(18) is formed at an edge of a clamp ring. An inert gas supply device(19) is installed at the bottom part of the process vessel. The gas supply device has a gas nozzle(20), an Ar gas supply source(21), and a gas pipe(22). The gas pipe has a mass flow controller(23) and opening and closing valves(24,25).

Abstract translation: 提供了一种SrTiO 3膜的成膜方法，用于在低于200℃的条件下进行材料的气化，以获得膜中均匀的组成，并且确保了对于电容器的电极有效的高通量和高覆盖率 MIM（金属绝缘子金属）结构。 成膜装置（100）包括圆柱形或箱状处理容器（1）。 安装装置（3）安装有半导体晶片（W）。 分隔壁（13）形成在安装装置的外周。 弯曲部分（14）通过水平地弯曲分隔壁而形成。 惰性气体净化室（15）形成在安装装置的内部。 连接杆（12）插入间隙中。 安装装置由支撑臂（4）支撑。 L形升降器销（5）从环形支撑构件（6）向上突出。 支撑构件通过提升杆（7）上下升降。 提升杆由致动器（10）上下移动。 提升杆的插入部分被波纹管（9）覆盖。 第二气体吹扫间隙（18）形成在夹紧环的边缘处。 惰性气体供给装置（19）安装在处理容器的底部。 气体供给装置具有气体喷嘴（20），Ar气体供给源（21）和气体管道（22）。 气体管道具有质量流量控制器（23）和开关阀（24,25）。