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公开(公告)号：KR101520368B1
公开(公告)日：2015-05-14
申请号：KR1020120112926
申请日：2012-10-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
Abstract: (과제) 박막의 면내 균일성의 더 한층의 향상을 가능하게 하는, 박막을 형성하기 위한 시드층의 형성 방법을 제공하는 것이다.
(해결 수단) 하지(base) 상에, 박막의 시드가 되는 시드층을 형성하는 시드층의 형성 방법으로서, 아미노실란계 가스를 이용하여, 하지 상에, 아미노실란계 가스에 포함된 적어도 실리콘을 흡착시키는 공정(스텝 11)과, 디실란 이상의 고차(高次) 실란계 가스를 이용하여, 아미노실란계 가스에 포함된 적어도 실리콘이 흡착된 하지 상에, 디실란 이상의 고차 실란계 가스에 포함된 적어도 실리콘을 퇴적하는 공정(스텝 12)을 구비한다.-
公开(公告)号：KR1020140085406A
公开(公告)日：2014-07-07
申请号：KR1020140072193
申请日：2014-06-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312 , H01L21/205
CPC classification number: H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
Abstract: The purpose of the present invention is to provide a film formation method of amorphous silicon, by which precision of surface roughness can be further improved to cope with progresses of miniaturization of contact holes, lines, or the like. The film formation method of amorphous silicon includes the steps of forming a seed layer (3) on a surface of a substrate (2) by heating the substrate (2) and flowing aminosilane-based gas onto the heated substrate (2); and forming an amorphous silicon film on the seed layer (3) by heating the substrate (2), supplying silane-based gas containing no amino group onto the seed layer (3) on the surface of the heated substrate (2), and thermally decomposing the silane-based gas containing no amino group.
Abstract translation: 本发明的目的是提供一种非晶硅的成膜方法，能够进一步提高表面粗糙度的精度，以适应接触孔，线等的小型化的进行。 非晶硅的成膜方法包括以下步骤：通过加热基板（2）并将氨基硅烷基气体流动到加热的基板（2）上，在基板（2）的表面上形成种子层（3）; 通过加热基板（2），在加热的基板（2）的表面上的种子层（3）上供给不含氨基的硅烷系气体，在种子层（3）上形成非晶硅膜， 分解不含氨基的硅烷系气体。
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公开(公告)号：KR1020130047580A
公开(公告)日：2013-05-08
申请号：KR1020120112926
申请日：2012-10-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: H01L21/0245 , C23C16/0272 , C23C16/24 , C30B25/183 , C30B29/06 , H01L21/02532 , H01L21/02573 , H01L21/0262
Abstract: PURPOSE: A method for forming a seed layer and a method for forming a silicon-containing thin film are provided to improve the uniformity of a thin film. CONSTITUTION: A seed layer is formed on a base(step 1). Silicon including aminosilane based gas is adsorbed onto the base by using aminosilane based gas(step 11). Silicone including desilane or higher silane gas is deposited on the base where the silicone is absorbed(step 12). A thin film including the silicon is formed on the seed layer(step 2). [Reference numerals] (AA) Start; (BB) Form a seed layer on a base; (CC) Adsorb at least silicon^*1 included in aminosilane based gas on the base; (DD) Deposit at least silicon^*2 included in higher-order silane-based gas than disilane on the base, on which the silicon^*1 is adsorbed; (EE) Step 11; (FF) Step 12; (GG) Step 1; (HH) Form a silicon-containing thin film on the seed layer; (II) Step 2; (JJ) End
Abstract translation: 目的：提供一种形成种子层的方法和形成含硅薄膜的方法，以提高薄膜的均匀性。 构成：在基底上形成种子层（步骤1）。 包括氨基硅烷基气体的硅通过使用氨基硅烷基气体吸附到基底上（步骤11）。 包含硅烷或更高硅烷气体的硅氧烷沉积在硅氧烷被吸收的基底上（步骤12）。 在种子层上形成包含硅的薄膜（步骤2）。 （附图标记）（AA）开始; （BB）在基底上形成种子层; （CC）至少吸附在基体上的基于氨基硅烷的气体中的硅^ * 1; （DD）沉积硅基基气体中硅烷基气体中的至少硅^ * 2比硅烷上吸附有硅^ * 1的乙硅烷; （EE）步骤11; （FF）步骤12; （GG）步骤1; （HH）在种子层上形成含硅薄膜; （二）第二步; （JJ）结束
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公开(公告)号：KR101197817B1
公开(公告)日：2012-11-05
申请号：KR1020107021022
申请日：2009-02-18
Applicant: 도쿄엘렉트론가부시키가이샤 , 엘피다 메모리 가부시키가이샤
IPC: H01L21/316 , H01L21/31 , H01L21/8242 , H01L27/108
CPC classification number: H01L21/31691 , C23C16/40 , C23C16/409 , C23C16/45527 , C23C16/45531 , C23C16/56 , H01G4/1227 , H01G4/33 , H01L28/40
Abstract: Sr-Ti-O계 막의 성막 방법은 처리용기내에 Ru막이 형성된 기판을 배치하고, 기체상의 Ti 원료와, 기체상의 Sr 원료와, 기체상의 산화제를 상기 처리용기내에 도입해서 Ru막 상에 두께 10㎚ 이하의 제 1 Sr-Ti-O계 막을 성막하는 것과, 제 1 Sr-Ti-O계 막을 어닐해서 결정화시키는 것과, 제 1 Sr-Ti-O계 막의 위에, 기체상의 Ti 원료와, 기체상의 Sr 원료와, 기체상의 산화제를 처리용기내에 도입하고 그 위에 제 2 Sr-Ti-O계 막을 성막하는 것과, 제 2 Sr-Ti-O계 막을 어닐해서 결정화시키는 것을 포함한다.
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公开(公告)号：KR1020100035176A
公开(公告)日：2010-04-02
申请号：KR1020107002918
申请日：2008-09-02
Applicant: 도쿄엘렉트론가부시키가이샤 , 엘피다 메모리 가부시키가이샤
IPC: C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108
CPC classification number: H01L21/0228 , C23C16/409 , C23C16/45531 , H01L21/02197 , H01L21/31604 , H01L21/31691 , H01L21/67115 , H01L21/68742 , H01L28/55
Abstract: A film is formed so that the atomic ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of Oat 500°C or above. An SrO film forming step and a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, Oand HO are used as an oxidizing agent.
Abstract translation: 形成膜，使得膜中的Sr与Ti的原子比（即Sr / Ti）不小于1.2且不大于3.然后将膜在含有不少于0.001％的气氛中进行退火 超过80％的燕麦500°C或以上。 重复SrO膜形成步骤和TiO膜形成步骤多次，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，使用O和HO作为氧化剂。
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Patent Agency Ranking
公开(公告)号：KR100927912B1
公开(公告)日：2009-11-19
申请号：KR1020077020452
申请日：2006-02-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/304 , H01L21/316
CPC classification number: H01J37/32935 , C23C16/405 , C23C16/407 , C23C16/45544 , H01J37/3244 , H01J37/32568
Abstract: A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space.
Abstract translation: 公开了一种通过基板处理设备处理基板的方法。 该基板处理装置包括：处理容器，其具有向基板供给第一处理气体或第二处理气体的第一空间和形成于第一空间的周围的第二空间; 第一排气单元，所述第一排气单元构造成排空所述第一空间; 以及构造成排空第二空间的第二排气单元。 该方法包括将第一处理气体供应到第一空间中的第一步骤; 从第一空间排出第一处理气体的第二步骤; 将第二处理气体供给到第一空间的第三步骤; 以及从第一空间排出第二处理气体的第四步骤; 其中第二空间中的压力通过供应到第二空间中的压力调节气体来调节。
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公开(公告)号：KR1020090107081A
公开(公告)日：2009-10-12
申请号：KR1020097018326
申请日：2008-02-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/40 , C23C16/455 , C23C16/52 , H01L21/316
CPC classification number: C23C16/45553 , C23C16/40 , C23C16/404 , C23C16/405 , H01L21/3141 , H01L21/31691
Abstract: A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO3 film is formed on the substrate. As the Sr material, an Sr amine compound or an Sr imine compound is used.
Abstract translation: 将衬底布置在处理室中，加热衬底，将Sr材料，Ti材料和氧化剂以气体形式引入处理室中，气体在加热的衬底上反应，并且将SrTiO 3 在基板上形成膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。
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公开(公告)号：KR101282908B1
公开(公告)日：2013-07-05
申请号：KR1020110039227
申请日：2011-04-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
Abstract: (과제) 표면 거칠기의 정밀도를 더욱 개선할 수 있어, 진전되는 콘택트 홀이나 라인 등의 미세화에 대응 가능한 어모퍼스 실리콘의 성막 방법을 제공하는 것이다.
(해결 수단) 하지(2)를 가열하고, 가열한 하지(2)에 아미노실란계 가스를 흘려 하지(2)의 표면에 시드층(3)을 형성하는 공정과, 하지(2)를 가열하고 가열한 하지(2)의 표면의 시드층(3)에 아미노기를 포함하지 않는 실란계 가스를 공급하여, 아미노기를 포함하지 않는 실란계 가스를 열분해시킴으로써, 시드층(3) 상에 어모퍼스 실리콘막을 형성하는 공정을 구비한다.-
公开(公告)号：KR1020130007430A
公开(公告)日：2013-01-18
申请号：KR1020120064087
申请日：2012-06-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3115 , H01L21/31
CPC classification number: C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
Abstract: PURPOSE: A method and an apparatus for forming a silicon film are provided to completely prevent voids from being generated in a groove by forming a non-doped Si film on the groove. CONSTITUTION: A method for forming a silicon film is as follows. A non-doped silicon film which does not have impurities is formed. The formed non-doped silicon film is etched. Impurities are doped on the etched non-doped silicon film. A silicon film doped with impurities is formed to bury the doped silicon film therein. [Reference numerals] (a) Temperature(°C); (AA) Loading process; (b) Input(Pa); (BB) Stabilizing process; (CC) First film forming process; (DD,GG) Purge stabilizing process; (EE) Etching process; (FF) Doping process; (HH) Second film forming process; (II) Purge process; (JJ) Unloading process
Abstract translation: 目的：提供一种用于形成硅膜的方法和装置，以通过在槽上形成未掺杂的Si膜来完全防止在沟槽中产生空隙。 构成：形成硅膜的方法如下。 形成不含杂质的非掺杂硅膜。 蚀刻形成的非掺杂硅膜。 杂质掺杂在蚀刻的非掺杂硅膜上。 形成掺杂有杂质的硅膜以将掺杂的硅膜埋入其中。 （附图标记）（a）温度（℃）; （AA）装载过程; （b）输入（Pa）; （BB）稳定过程; （CC）第一成膜工艺; （DD，GG）净化稳定过程; （EE）蚀刻工艺; （FF）兴奋剂过程; （HH）第二次成膜工艺; （二）清洗工艺; （JJ）卸载过程
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公开(公告)号：KR101217419B1
公开(公告)日：2013-01-02
申请号：KR1020117030107
申请日：2008-09-02
Applicant: 도쿄엘렉트론가부시키가이샤 , 엘피다 메모리 가부시키가이샤
IPC: C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108
CPC classification number: H01L21/0228 , C23C16/409 , C23C16/45531 , H01L21/02197 , H01L21/31604 , H01L21/31691 , H01L21/67115 , H01L21/68742 , H01L28/55
Abstract: 막내의 Sr과 Ti의비율(Sr/Ti)이원자수비로 1.2 이상 3 이하가되도록하여성막한후, 0.001 % 이상 80 % 이하의 O를함유하는분위기내에서 500 ℃이상으로어닐링한다. 또한, SrO막성막단계또는/및 TiO막성막단계가복수회 연속해서수행되는시퀀스를포함하여 SrO막성막단계및 TiO막성막단계를복수회 수행한다. 또한, Sr을흡착시킨후, Sr을산화시킬때에, 산화제로서 O및 HO를이용한다.
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