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    레이저 시스템
    1.
    发明公开
    레이저 시스템 有权
    激光系统

    公开(公告)号：KR1020080066974A

    公开(公告)日：2008-07-17

    申请号：KR1020087013076

    申请日：2006-10-20

    Applicant: 사이머 엘엘씨

    Inventor： 에르쇼프알렉산더아이. ,  파틀로윌리엄엔. ,  브라운다니엘제이.더블유. ,  포멘코프아이고르브이. ,  베르그스테츠로버트에이. ,  샌드스트롬리차드엘. ,  라로빅이반

    IPC: H01S3/22

    CPC classification number: H01S3/225 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/03 ,  H01S3/034 ,  H01S3/08036 ,  H01S3/08059 ,  H01S3/10092 ,  H01S3/105 ,  H01S3/2251 ,  H01S3/2333

    Abstract: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage wherein the output of the seed laser oscillator passes through the amplifying gain medium of the ring power amplification stage at least two times per loop.

    Abstract translation: 一种方法和装置可以包括线变窄的脉冲准分子或分子氟气放电激光系统，其可以包括种子激光振荡器，其产生包括可以包括第一气体放电准分子或分子氟激光室的脉冲的激光输出光束的输出; 第一振荡器腔内的线窄模块; 在第二气体放电准分子或分子氟激光室中包含放大增益介质的激光放大级，其接收种子激光振荡器的输出并放大种子激光振荡器的输出，以形成激光系统输出，该激光系统输出包括：激光输出光束 脉冲，其可以包括环形功率放大级，其中种子激光振荡器的输出通过环形功率放大级的放大增益介质至少每循环两次。

    레이저 시스템
    4.
    发明公开
    레이저 시스템 有权
    激光系统

    公开(公告)号：KR1020110091788A

    公开(公告)日：2011-08-12

    申请号：KR1020117014864

    申请日：2006-10-20

    Applicant: 사이머 엘엘씨

    Inventor： 에르쇼프알렉산더아이. ,  파틀로윌리엄엔. ,  브라운다니엘제이.더블유. ,  포멘코프아이고르브이. ,  베르그스테츠로버트에이. ,  샌드스트롬리차드엘. ,  라로빅이반

    IPC: H01S3/22 ,  H01S3/03

    CPC classification number: H01S3/225 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/03 ,  H01S3/034 ,  H01S3/08036 ,  H01S3/08059 ,  H01S3/10092 ,  H01S3/105 ,  H01S3/2251 ,  H01S3/2333

    Abstract: 제1가스방전 엑시머 또는 분자 플루오르 레이저 챔버, 및 제1오실레이터 캐비티 내의 라인 내로우잉 모듈을 포함하는 레이저 출력 광 빔 펄스를 포함하는 출력을 산출하는 시드 레이저 오실레이터; 레이저 출력 광 빔 펄스를 포함하는 레이저 시스템 출력을 형성하기 위해 시드 레이저 오실레이터의 출력을 수신하고, 시드 레이저 오실레이터의 출력을 증폭하는 제2가스방전 엑시머 또는 분자 플루오르 레이저 챔버 내에 증폭 이득 매체를 포함하는 레이저 증폭 스테이지; 및 링 파워 증폭 스테이지를 포함하는 라인 내로우드 펄스 엑시머 또는 분자 플루오르 가스방전 레이저 시스템을 포함할 수 있는 방법 및 장치가 개시된다.

    Abstract translation: 种子激光振荡器，用于在第一振荡器腔中产生包括激光输出光束脉冲的输出，所述激光输出光束脉冲包括第一气体放电准分子或分子氟激光腔室和机翼模块; 其中以形成一个激光系统输出，其包括一个光束脉冲接收种子激光振荡器的激光腔中的输出和第二气体排出准分子或分子氟放大增益介质，用于放大种子激光器振荡器的输出激光输出的激光 放大阶段; 公开了一种方法和设备，其可以将木材脉冲准分子或分子氟气体放电激光系统包括到包括环形功率放大级的线路中。

    ＬＰＰ ＥＵＶ 광원 구동 레이저 시스템
    7.
    发明公开
    ＬＰＰ ＥＵＶ 광원 구동 레이저 시스템 有权
    LPP EUV光源驱动激光系统

    公开(公告)号：KR1020080024535A

    公开(公告)日：2008-03-18

    申请号：KR1020087001491

    申请日：2006-06-27

    Applicant: 사이머 엘엘씨

    Inventor： 에르쇼프알렉산더아이. ,  바이카노프알렉산더엔. ,  코디킨올레흐 ,  포멘코프아이고르브이.

    IPC: G01J1/00

    CPC classification number: H05G2/003 ,  H05G2/005 ,  H05G2/008

    Abstract: An apparatus and method is disclosed which may comprise a laser produced plasma EUV system which may comprise a drive laser producing a drive laser beam; a drive laser beam first path having a first axis; a drive laser redirecting mechanism transferring the drive laser beam from the first path to a second path, the second path having a second axis; an EUV collector optical element having a centrally located aperture; and a focusing mirror in the second path and positioned within the aperture and focusing the drive laser beam onto a plasma initiation site located along the second axis. The apparatus and method may comprise the drive laser beam is produced by a drive laser having a wavelength such that focusing on an EUV target droplet of less than about 100 mum at an effective plasma producing energy if not practical in the constraints of the geometries involved utilizing a focusing lens. The drive laser may comprise a CO 2 laser. The drive laser redirecting mechanism may comprise a mirror. ® KIPO & WIPO 2008

    Abstract translation: 公开了一种装置和方法，其可以包括激光产生的等离子体EUV系统，其可以包括产生驱动激光束的驱动激光器; 具有第一轴的驱动激光束第一路径; 驱动激光重定向机构，其将所述驱动激光束从所述第一路径传递到第二路径，所述第二路径具有第二轴线; 具有中心定位的孔的EUV收集器光学元件; 以及在第二路径中的聚焦反射镜并且定位在孔内并将驱动激光束聚焦到沿着第二轴线定位的等离子体起始位置。 该装置和方法可以包括驱动激光束由具有波长的驱动激光器产生，该激光器具有在有效等离子体产生能量的情况下聚焦在小于约100μm的EUV目标液滴上的波长，如果在所涉及的几何形状的约束条件下 聚焦镜头。 驱动激光器可以包括CO 2激光器。 驱动激光重定向机构可以包括镜子。 ®KIPO＆WIPO 2008

    ＥＵＶ 콜렉터 파편 관리
    9.
    发明公开
    ＥＵＶ 콜렉터 파편 관리 失效
    EUV收集器破产管理

    公开(公告)号：KR1020070091603A

    公开(公告)日：2007-09-11

    申请号：KR1020077009514

    申请日：2005-10-20

    Applicant: 사이머 엘엘씨

    Inventor： 파틀로윌리엄엔. ,  포멘코프이고르브이. ,  에르쇼프알렉산더아이. ,  올드햄윌리엄 ,  햄버그오스카 ,  마르크스윌리엄에프.

    IPC: H01L21/306

    CPC classification number: B08B7/00

    Abstract: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    Abstract translation: 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

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