플라즈마 처리 장치
    1.
    发明公开
    플라즈마 처리 장치 有权
    用于加工等离子体基板的装置

    公开(公告)号:KR1020100120975A

    公开(公告)日:2010-11-17

    申请号:KR1020090039887

    申请日:2009-05-07

    Abstract: PURPOSE: An apparatus for processing plasma is provided to constantly etch the surface of a substrate by maintaining the uniformity of plasma in a chamber. CONSTITUTION: A substrate is arranged in a chamber. A first electrode(104) is arranged in the chamber and is spaced apart from the lower side of the substrate. A second electrode(105) is arranged in the chamber and is spaced apart from the upper side of the substrate. A gap regulating unit(102) regulates a gap between the first electrode and the substrate or a gap between the second electrode and the substrate.

    Abstract translation: 目的:提供一种用于处理等离子体的装置,以通过维持室中的等离子体的均匀性来恒定地蚀刻基板的表面。 构成:衬底布置在腔室中。 第一电极(104)布置在腔室中并与衬底的下侧隔开。 第二电极(105)布置在腔室中并与衬底的上侧隔开。 间隙调节单元(102)调节第一电极和衬底之间的间隙或第二电极和衬底之间的间隙。

Patent Agency Ranking