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公开(公告)号:KR100691160B1
公开(公告)日:2007-03-09
申请号:KR1020050038093
申请日:2005-05-06
Applicant: 삼성전기주식회사
CPC classification number: H03H9/1085 , H01L24/97 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/48091 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/3025 , H03H3/08 , H03H9/059 , H03H9/1078 , H01L2224/81 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: 적층형 표면탄성파 패키지를 제공한다.
본 발명은 복수의 전극이 형성된 제 1베어칩 ; 복수의 전극과 비어홀이 형성된 제 2베어칩 ; 상기 제 1베어칩의 전극과 상기 제 2베어칩의 전극이 서로 대향하도록 상기 제 2베어칩의 상부면에 상기 제 1베어칩을 전기적으로 연결하는 연결부 ; 및 상기 제 1,2베어칩사이의 동작면에 기밀공간을 형성하도록 상기 제 1,2베어칩상에 구비되는 밀봉부 ; 를 포함한다.
본 발명에 의하면, 패키징시 외부의 열충격에 의한 변형을 방지하여 제품의 신뢰성을 높일 수 있고, 제품의 소형화추세에 맞추어 완제품의 사이즈를 최소화하고, 구성부품수및 재료비를 줄여 제조원가를 절감할 수 있다.
표면탄성파, 베어칩, 압전단 결정, 금속댐, 수지필름, 금속층-
公开(公告)号:KR1020060115791A
公开(公告)日:2006-11-10
申请号:KR1020050038093
申请日:2005-05-06
Applicant: 삼성전기주식회사
CPC classification number: H03H9/1085 , H01L24/97 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/48091 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/3025 , H03H3/08 , H03H9/059 , H03H9/1078 , H01L2224/81 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: A stack type surface acoustic wave package and a method for fabricating the same are provided to reduce a number of components by replacing a ceramic based wiring substrate with a piezoelectric single crystal based substrate. In a stack type surface acoustic wave package(100), a plurality of electrodes is formed at a first bare chip(110). A plurality of electrodes and via holes(134) are formed at a second bare chip(120). A connecting unit(130) connects the first bare chip(110) to an upper face of the second bare chip(120). The electrodes of the first bare chip(110) corresponds to the electrodes of the second bare chip(120). A sealing unit(140) is placed at an upper face of the first and second bare chips(110,120) for forming an airtight space at an operating side between the first and second bare chips(110,120).
Abstract translation: 提供了一种叠层型表面声波封装及其制造方法,通过用基于压电单晶的基板代替陶瓷基布线基板来减少部件数量。 在叠层型声表面波封装(100)中,在第一裸芯片(110)上形成多个电极。 在第二裸芯片(120)上形成多个电极和通孔(134)。 连接单元(130)将第一裸芯片(110)连接到第二裸芯片(120)的上表面。 第一裸芯片(110)的电极对应于第二裸芯片(120)的电极。 密封单元(140)放置在第一和第二裸芯片(110,120)的上表面,用于在第一和第二裸芯片(110,120)之间的操作侧形成气密空间。
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公开(公告)号:KR100541084B1
公开(公告)日:2006-01-11
申请号:KR1020030057496
申请日:2003-08-20
Applicant: 삼성전기주식회사
IPC: H03H3/08
CPC classification number: H03H9/1078 , H01L24/97 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/3025 , H03H3/08 , H03H9/1085 , H01L2924/00
Abstract: 본 발명은 외곽 패턴 및 버(bur) 방지용 홀(hole)을 형성한 시트를 사용한 표면 탄성파 필터(이하 'SAW 필터'라 한다)의 제조방법 및 그 시트에 관한 것이다.
본 발명의 표면 탄성파(SAW) 필터 패키지의 패키지 시트에는, 다수개의 SAW 필터 칩이 장착될 위치의 외곽선을 따라 소정 너비로 형성되며 상기 SAW 필터 칩 및 패키지 시트에 형성되는 금속 실드층과 접촉하는 외곽패턴과, 상기 SAW 필터 칩이 장착될 위치의 모서리 부분에 맞물리며 다수개의 SAW 필터 패키지로 절단하기 위한 절단선이 통과하도록 형성되는 원형의 버 발생 방지홀이 형성된다.
버, saw, 필터, 패키지, 시트, 패턴, 실드-
公开(公告)号:KR1020060116894A
公开(公告)日:2006-11-16
申请号:KR1020050039416
申请日:2005-05-11
Applicant: 삼성전기주식회사
CPC classification number: H03H3/08 , H03H9/02574 , H03H9/0561 , H03H9/059 , H03H9/25
Abstract: A surface acoustic wave device package and a method for manufacturing the same are provided to prevent moisture from being infiltrated into an airtight space by protecting the SAW device package through a ring-shape metal plated layer and a metal shield layer. In a surface acoustic wave device package(100), a via substructure is formed inside a multi-layer wiring substrate(101). A SAW(Surface Acoustic Wave) chip(107) is bonded at a surface of the multi-layer wiring substrate(101) as a flip chip type. A ring-shape metal plated layer(104) is formed at the surface of the multi-layer wiring substrate(101), along an outline of the SAW chip(107). A protective film(106) forms an airtight space by surrounding the SAW chip(107). A metal shield layer(116) formed at a surface of the protective film(106) is connected with the ring-shape metal plated layer(104).
Abstract translation: 提供一种弹性表面波器件封装及其制造方法,以通过环形金属镀层和金属屏蔽层来保护SAW器件封装,防止水分渗入气密空间。 在声表面波器件封装(100)中,在多层布线基板(101)的内部形成通孔子结构。 SAW(表面声波)芯片(107)作为倒装芯片型接合在多层布线基板(101)的表面。 沿着SAW芯片(107)的轮廓,在多层布线基板(101)的表面形成环状金属镀层(104)。 保护膜(106)通过围绕SAW芯片(107)形成气密空间。 形成在保护膜(106)表面的金属屏蔽层(116)与环形金属镀层(104)连接。
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公开(公告)号:KR1020030046940A
公开(公告)日:2003-06-18
申请号:KR1020010077278
申请日:2001-12-07
Applicant: 삼성전기주식회사
IPC: H03H9/64
CPC classification number: H01L21/561 , H01L21/563 , H01L24/29 , H01L24/97 , H01L2224/73203 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/3025 , H03H3/08 , H03H9/02913 , H03H9/059 , H03H9/1078 , H03H9/1085 , H01L2924/00
Abstract: PURPOSE: A method for fabricating a surface acoustic wave filter package is provided to enhance productivity by forming a plurality of surface acoustic wave filter packages with a simplified process. CONSTITUTION: A plurality of surface acoustic wave filter chips are formed on a wafer. A plurality of mounting portions are formed on a package substrate(12). An underfill is formed on the mounting portions of the package substrate. The wafer is arranged on the package substrate in order to connect the surface acoustic wave filter chips to the mounting portions. A wafer region is removed from the surface acoustic wave filter chips in order to separate the surface acoustic wave filter chips in units. A metal shield layer is formed on the outside of the separated surface acoustic wave filter chips. A resin molding portion(20) is formed on an upper face of the package substrate. The package substrate are divided into the surface acoustic wave filter chip units.
Abstract translation: 目的:提供一种用于制造表面声波滤波器封装的方法,以通过以简化的工艺形成多个表面声波滤波器封装来提高生产率。 构成:在晶片上形成多个表面声波滤波器芯片。 多个安装部分形成在封装基板(12)上。 在封装基板的安装部分上形成底部填充物。 将晶片布置在封装衬底上,以将表面声波滤波器芯片连接到安装部分。 为了将表面声波滤波器芯片单元分离,从表面声波滤波器芯片中去除晶片区域。 在分离的声表面波滤波器芯片的外侧形成金属屏蔽层。 树脂成型部(20)形成在封装基板的上表面上。 封装衬底被分成表面声波滤波器芯片单元。
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公开(公告)号:KR1020030046939A
公开(公告)日:2003-06-18
申请号:KR1020010077277
申请日:2001-12-07
Applicant: 삼성전기주식회사
IPC: H03H9/64
CPC classification number: H03H9/1078 , H01L2224/73204 , H03H9/02913 , H03H9/059 , H03H9/1085 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/4913 , Y10T29/49146
Abstract: PURPOSE: A method for fabricating a surface acoustic wave filter package is provided to simplify a fabricating process by omitting a fillet fabrication process and forming only a single metal shield layer. CONSTITUTION: A surface acoustic wave filter chip(13) is mounted on a surface of a substrate(12). An underfill is formed into a space between the substrate and the surface acoustic wave filter chip. A metal shield layer is formed on the entire surface of the outside of the surface acoustic wave filter chip by using a spray method. A resin molding portion(22) is formed on an upper surface of the metal shield layer. A plurality of protector structures are formed on a lower end side of the surface acoustic wave filter in order to form an air gap. The metal shield layer is formed by injecting the conductive epoxy to the outside of the surface acoustic wave filter chip through a spray nozzle.
Abstract translation: 目的:提供一种用于制造表面声波滤波器封装的方法,以通过省略圆角制造工艺并仅形成单个金属屏蔽层来简化制造工艺。 构成:表面声波滤波器芯片(13)安装在基板(12)的表面上。 底部填充物形成在基板和表面声波滤波器芯片之间的空间中。 通过使用喷射法在表面声波滤波器芯片的外部的整个表面上形成金属屏蔽层。 在金属屏蔽层的上表面上形成有树脂成型部(22)。 为了形成气隙,在声表面波滤波器的下端侧形成有多个保护结构。 通过喷嘴将导电性环氧树脂注入到表面声波滤波器芯片的外部,形成金属屏蔽层。
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公开(公告)号:KR100631412B1
公开(公告)日:2006-10-04
申请号:KR1020050037843
申请日:2005-05-06
Applicant: 삼성전기주식회사
IPC: H03H9/64
Abstract: A double mode surface acoustic wave(DMS) filter having a serial two track structure is provided to reduce the size by minimizing the number of reflectors and decreasing the width of an aperture. A double mode surface acoustic wave(DMS) filter(100) having serial two track structure comprises a first double mode DMS track(120) and a second double mode DMS track(130). The first double mode DMS track(120) includes at least one inter digital transducer(IDT) electrode which filters an input signal in a constant band between a first reflector electrode(124) and a second reflector electrode(125). The second double mode DMS track(130) comprises a first parallel two track(151), a second parallel two track(152), first and second reflector electrodes(137,138) and third reflector electrode(139). The first parallel two track(151) includes IDT electrode composed of serial two track which receives the signal from the IDT electrode of the first double mode DMS track(120) and outputs the signal filtered in the constant band to a first output terminal. The second parallel two track(152) includes IDT electrode composed of serial two track which receives the signal from the IDT electrode of the first double mode DMS track(120) and outputs the signal filtered in the constant band to a second output terminal. The first and second reflector electrodes(137,138) are configured at one end of the first parallel two track(151) and the other end of the second parallel two track(152). The third reflector electrode(139) is formed between the first parallel two track(151) and the second parallel two track(152).
Abstract translation: 提供具有串行双轨道结构的双模式表面声波(DMS)滤波器,以通过最小化反射器的数量和减小孔径的宽度来减小尺寸。 具有串行双轨道结构的双模式表面声波(DMS)滤波器(100)包括第一双模DMS轨道(120)和第二双模DMS轨道(130)。 第一双模式DMS轨道(120)包括至少一个互连数字换能器(IDT)电极,其对第一反射器电极(124)和第二反射器电极(125)之间的恒定频带中的输入信号进行滤波。 第二双模DMS轨道(130)包括第一平行双轨道(151),第二平行双轨道(152),第一和第二反射器电极(137,138)以及第三反射器电极(139)。 第一平行双轨道(151)包括由串行两条轨道组成的IDT电极,该轨道接收来自第一双模DMS轨道(120)的IDT电极的信号,并将在恒定频带中滤波的信号输出到第一输出端。 第二平行双轨道(152)包括由串行两条轨道组成的IDT电极,该轨道接收来自第一双模DMS轨道(120)的IDT电极的信号,并将在恒定频带中滤波的信号输出到第二输出端子。 第一和第二反射器电极(137,138)配置在第一平行两轨道(151)的一端和第二平行两轨道(152)的另一端。 第三反射器电极(139)形成在第一平行的两个轨道(151)和第二平行的两个轨道(152)之间。
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公开(公告)号:KR100431181B1
公开(公告)日:2004-05-12
申请号:KR1020010077278
申请日:2001-12-07
Applicant: 삼성전기주식회사
IPC: H03H9/64
CPC classification number: H01L21/561 , H01L21/563 , H01L24/29 , H01L24/97 , H01L2224/73203 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/3025 , H03H3/08 , H03H9/02913 , H03H9/059 , H03H9/1078 , H03H9/1085 , H01L2924/00
Abstract: Disclosed is a method for simply fabricating plural surface acoustic wave filter chip packages in large quantities comprising the steps of providing a wafer, on the surface of which plural surface acoustic wave filter chips are formed, and a package substrate, on the surface of which mounting portions corresponding to surface acoustic wave filter chips are formed; providing underfill on the package substrate; mounting the wafer on the package substrate; removing wafer portions between surface acoustic wave filter chips; forming metal shield layers on outer walls of separated surface acoustic wave filter chips; molding a resin on outer walls of surface acoustic wave filter chips coated with metal layers; and dividing the package substrate molded with resin into individual surface acoustic wave filter chip packages.
Abstract translation: 公开了一种用于大量制造多个表面声波滤波器芯片封装的方法,包括以下步骤:提供在其表面上形成有多个表面声波滤波器芯片的晶片和封装衬底,其表面安装 对应于表面声波滤波器芯片的部分被形成; 在封装衬底上提供底部填充物; 将晶片安装在封装衬底上; 去除表面声波滤波器芯片之间的晶片部分; 在分离的声表面波滤波器芯片的外壁上形成金属屏蔽层; 在覆盖有金属层的弹性表面波滤波器芯片的外壁上模制树脂; 并将用树脂模塑的封装基板分成单独的表面声波滤波器芯片封装。
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公开(公告)号:KR1020090016836A
公开(公告)日:2009-02-18
申请号:KR1020070081109
申请日:2007-08-13
Applicant: 삼성전기주식회사
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L2224/16 , H01L2924/01079 , H01L23/49816 , H01L23/49568 , H01L24/10 , H01L2224/03914 , H01L2224/1133
Abstract: A surface acoustic wave package and a manufacturing method thereof are provided to improve reliability of a product by sealing enclosure with a sealing part and a resin layer. An exposed area exposing a part of a pad is formed in the upper side of a wafer(110) including an electrode(111) and a pad(112). Conductive metal material including Au etc. is coated on the exposed area and a bump(113) is formed in the upper side of the pad. The photoresist remained from the upper side of the wafer is removed with a dry etching process. A first dry film is adhered in the upper side of the wafer. A vertical partition(121) which surrounds the electrodes is formed by developing a first dry film. A second dry film is mounted in the top end portion of the vertical partition by laminating a second dry film having constant thickness on the top of the wafer in which the vertical partition is formed. A sealing part(120) removes the rest except for the second dry film corresponding to the electrode and blocks the electrode with an external environment. A resin layer(130) of constant thickness is formed in the upper side of the wafer. Electrodes are formed in the upper side of the wafer. A solder ball(S) is formed in the bump of the pad electrically connected with the electrode.
Abstract translation: 提供表面声波封装及其制造方法,通过用密封部和树脂层密封外壳来提高产品的可靠性。 在包括电极(111)和垫(112)的晶片(110)的上侧形成有露出焊盘一部分的曝光区域。 包含Au等的导电金属材料涂覆在暴露区域上,并且在垫的上侧形成凸块(113)。 用干蚀刻工艺除去从晶片上侧残留的光致抗蚀剂。 第一干膜粘附在晶片的上侧。 通过显影第一干膜形成围绕电极的垂直隔板(121)。 通过在其上形成有垂直隔板的晶片的顶部层叠具有恒定厚度的第二干膜,将第二干膜安装在垂直隔板的顶端部分中。 除了与电极对应的第二干膜之外,密封部件(120)除去其余部分,并且在外部环境下阻挡电极。 在晶片的上侧形成恒定厚度的树脂层(130)。 电极形成在晶片的上侧。 在与电极电连接的焊盘的凸块中形成焊球(S)。
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公开(公告)号:KR1020060115095A
公开(公告)日:2006-11-08
申请号:KR1020050037420
申请日:2005-05-04
Applicant: 삼성전기주식회사
IPC: H03H3/08
CPC classification number: H03H9/1085 , H03H9/059
Abstract: A surface acoustic wave device package with a high airtight property is provided to prevent external moisture from permeating inside by including a wiring substrate with a precise and stepped interface. In a surface acoustic wave device package with a high airtight property, a wiring substrate(10) includes a bare chip adhering member provided as a package base including a connection wiring(12). A bare chip(50) closely adhered to the bare chip adhering member is boned to a surface of the wiring substrate(10) as a flip bonding type while maintaining an airtight of an active area. And. a resin molding unit(70) surrounds the wiring substrate(10) and the bare chip(50) and is sealed.
Abstract translation: 提供具有高气密特性的表面声波器件封装,以通过包括具有精确和阶梯式界面的布线基板来防止外部湿气渗入内部。 在具有高气密特性的表面声波器件封装中,布线基板(10)包括设置为包括连接布线(12)的封装基座的裸芯片粘接部件。 将紧贴在裸芯片粘合部件上的裸芯片50作为翻转接合型被烧结到布线基板(10)的表面,同时保持有效区域的气密。 和。 树脂模制单元(70)围绕着布线基板(10)和裸芯片(50)并被密封。
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