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公开(公告)号：KR100891800B1
公开(公告)日：2009-04-07
申请号：KR1020070120472
申请日：2007-11-23
Applicant: 삼성전기주식회사
Abstract: A manufacturing method of light emitting diode array and a light emitting diode array are provided to improve the productivity of manufacturing process by suppressing the reliability deterioration of the emitting device. A plurality of grooves are formed on the one side of substrate(100). An insulating layer(120) is formed on the substrate where is exposed to the lateral side of groove and the gap between the grooves. The insulating layer comprises the insulating material in order to electrically separate the discrete emitting device. The first conductivity type semiconductor layer(130), an active layer(140), and the second electrical conduction semiconductor layer(150) are laminated in each groove portion.
Abstract translation: 提供了发光二极管阵列和发光二极管阵列的制造方法，以通过抑制发光装置的可靠性劣化来提高制造工艺的生产率。 在基板（100）的一侧形成有多个槽。 绝缘层（120）形成在基板上，暴露于槽的侧面和槽之间的间隙。 绝缘层包括绝缘材料以便电离分离发射器件。 第一导电类型半导体层（130），有源层（140）和第二导电半导体层（150）层叠在每个沟槽部分中。
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公开(公告)号：KR100872301B1
公开(公告)日：2008-12-05
申请号：KR1020070061592
申请日：2007-06-22
Applicant: 삼성전기주식회사
Abstract: The light emitting device and manufacturing method thereof are provided to have the new wiring connection structure which the protecting element can integrate by exposing one side contact buried in the substrate structure through the conductive layer. The light emitting device(20) comprises the first and the second semiconductor laminate(10A, 10B), the first and the second contacts(26, 23), the substrate structure(25), the first insulation layer(22a), the first and second conductive layers(24a, 24b), the first and second wiring layers(27a, 27b), and the first and second outer bonding pads(28, 29). The first and the second semiconductor laminate have the first and the second conductive semiconductor layer and the active layer positioned at the first and the second conductive semiconductor layer. The first and the second contact are formed in the opposed both sides of the first and the second semiconductor laminate to be connected to the first and the second conductive semiconductor layer. The substrate structure has the first and the second side. The first and the second conductive layer are formed in order to be connected to the second contact of the first and the second semiconductor laminate.
Abstract translation: 发光器件及其制造方法被设置为具有新的布线连接结构，该保护元件可以通过暴露通过导电层埋入基片结构中的一侧触点来整合。 发光器件（20）包括第一和第二半导体层叠体（10A，10B），第一和第二触点（26,23），基板结构（25），第一绝缘层（22a），第一 和第二导电层（24a，24b），第一和第二布线层（27a，27b）以及第一和第二外部接合焊盘（28,29）。 第一和第二半导体层叠体具有位于第一和第二导电半导体层的第一和第二导电半导体层和有源层。 第一和第二接触形成在第一和第二半导体层叠体的相对的两侧，以连接到第一和第二导电半导体层。 衬底结构具有第一侧和第二侧。 形成第一和第二导电层以便连接到第一和第二半导体层叠体的第二接触。
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公开(公告)号：KR100872298B1
公开(公告)日：2008-12-05
申请号：KR1020070082812
申请日：2007-08-17
Applicant: 삼성전기주식회사
Abstract: The vertical structure semiconductor light emitting device and manufacturing method thereof are provided to flow effectively the current between the p electrode and the n electrode. The vertical structure semiconductor light emitting device(20) comprises the conductive board(25), the p-type semiconductor layer(23), the active layer(22), the n-type semiconductor layer(21), the N side electrode(26), the current constraining layer(27). The p-type semiconductor layer, the active layer and n-type semiconductor layer are successively formed on the conductive board. The N side electrode is formed on the n-type semiconductor layer. The current constraining layer is formed in the partial region of the interface between the n-type semiconductor layer and N side electrode. The current constraining layer comprises the material comprised N side electrode and the material forming the Schottky barrier.
Abstract translation: 提供垂直结构半导体发光器件及其制造方法，以有效地流动p电极和n电极之间的电流。 垂直结构半导体发光器件（20）包括导电板（25），p型半导体层（23），有源层（22），n型半导体层（21），N侧电极 26），当前约束层（27）。 p型半导体层，有源层和n型半导体层依次形成在导电板上。 N侧电极形成在n型半导体层上。 电流约束层形成在n型半导体层和N侧电极之间的界面的部分区域中。 目前的约束层包括由N侧电极和形成肖特基势垒的材料构成的材料。
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公开(公告)号：KR100843402B1
公开(公告)日：2008-07-03
申请号：KR1020070061593
申请日：2007-06-22
Applicant: 삼성전기주식회사
CPC classification number: H05B33/0803 , H05B33/0821 , Y02B20/342 , Y10S362/80 , Y10S362/808
Abstract: An LED driving circuit and a light emitting diode array device are provided to reduce the number of LED devices used at the same output by increasing the ratio between the number of LED devices to be driven always among the total number of LED devices. An LED driving circuit includes at least one ladder net circuit, a first current loop(L1), and a second current loop(L2). The ladder net circuit has n+1 number of first branches, n+1 number of second branches, and n number of middle branches, wherein the n is a positive integer larger than 2. The first branches are connected in parallel between first and second contacts(a,b) by first middle contacts(c1,c2). The second branches are connected in parallel between the first and second contacts by second middle contacts(d1,d2). The ladder net circuit determines the order of the first and second branches and the middle contacts. The first current loop is connected to the (2m-1)th first branch, the 2m-th second branch, and the n number of middle branches. The first current loop has a first LED group connected to the (2m-1)th first branch, the 2m-th second branch, and the n number of middle branches in series. The second current loop are connected to the 2m-th first branch, the (2m-1)th second branch, and the n number of middle branches. The second current loop has a second LED group connected to the first LED group in series.
Abstract translation: 提供LED驱动电路和发光二极管阵列器件，以通过增加始终在LED器件的总数中驱动的LED器件的数量之间的比例来减少在相同输出处使用的LED器件的数量。 LED驱动电路包括至少一个梯形网电路，第一电流回路（L1）和第二电流回路（L2）。 梯形网电路具有n + 1个第一分支，n + 1个第二分支和n个中分支，其中n是大于2的正整数。第一分支在第一和第二分支之间并联连接 触点（a，b）由第一中间触点（c1，c2）组成。 第二分支通过第二中间触点（d1，d2）并联连接在第一和第二触点之间。 梯形网络电路确定第一和第二分支和中间触点的顺序。 第一个电流环路连接到第（2m-1）个第一分支，第二个第二分支和n个中间分支。 第一电流回路具有连接到第（2m-1）第一分支，第2m分支和n个中间分支的第一LED组。 第二电流环连接到第2m第1分支，（2m-1）第2分支和n个中分支。 第二电流回路具有连接到第一LED组的第二LED组。
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