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公开(公告)号：KR100826389B1
公开(公告)日：2008-05-02
申请号：KR1020060075407
申请日：2006-08-09
Applicant: 삼성전기주식회사
IPC: H01L33/16
CPC classification number: C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
Abstract: 본 발명은, 질화물 반도체층 상에 개구부를 갖는 마스크를 형성하는 단계와, 상기 마스크의 개구부에 노출된 상기 질화물 반도체층 영역에 상기 질화물 반도체층 상면에 대해 경사진 결정면을 갖는 육각 피라미드 구조의 질화물 반도체 결정을 선택적으로 성장시키는 단계를 포함하며, 상기 육각 피라미드 구조의 질화물 반도체 결정은, 그 상하부에 위치한 결정면의 경사각보다 큰 경사각의 결정면을 갖는 적어도 하나의 중간분리영역을 포함하는 질화물 반도체 선택 성장방법을 제공한다.또한, 본 발명은 상기한 질화물 반도체 선택 성장방법을 이용하여 제조될 수 있는 질화물 발광소자와, 그 제조방법을 제공한다.
질화물 결정(nitride crystal), 피라미드(pyramid), 발광다이오드(light emitting diode)-
公开(公告)号：KR100809235B1
公开(公告)日：2008-03-05
申请号：KR1020060078987
申请日：2006-08-21
Applicant: 삼성전기주식회사
IPC: H01L33/02
Abstract: 본 발명은, 제1 도전형 질화물 반도체로 이루어진 기저층 상면에 복수의 윈도우를 갖는 마스크를 형성하는 단계와, 상기 복수의 윈도우에 노출된 상기 기저층 영역 각각에 상기 기저층 상면에 대해 경사진 결정면을 갖는 육각 피라미드 구조의 제1 도전형 질화물 반도체 결정을 선택적으로 성장시키는 단계와, 상기 제1 도전형 질화물 반도체 결정 표면에 활성층 및 제2 도전형 질화물 반도체층을 순차적으로 성장시키는 단계를 포함하며, 상기 마스크는 적어도 2개의 영역을 구분되며, 상기 적어도 2개의 영역에 위치한 윈도우는 각각 서로 다른 간격을 갖도록 배열된 것을 특징으로 하는 질화물 반도체 발광소자 제조방법을 제공한다.
질화물 결정(nitride crystal), 피라미드(pyramid), 발광다이오드(light emitting diode)Abstract translation: 本发明中，在形成具有在由第一导电型氮化物半导体的基底层上表面上的多个窗口的掩模的步骤中基体层的上表面上具有倾斜的晶面的六边形，并且每个暴露于所述多个窗口的基础层的区域的 包括以下步骤：其中，所述第一有源层和第二导电型氮化物半导体上的第一导电型氮化物半导体晶体的生长表面，以便选择性地生长锥体纹理的第一导电型氮化物半导体晶体层，所述掩模的 其中至少两个区域被分开，并且位于至少两个区域中的窗口被布置为具有彼此不同的间隔。
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公开(公告)号：KR1020080018355A
公开(公告)日：2008-02-28
申请号：KR1020060080337
申请日：2006-08-24
Applicant: 삼성전기주식회사
IPC: H01L33/22
Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to increase a light extraction efficiency of the light emitted from the top surface of a nitride semiconductor. An active layer(13) is formed on a first conductive nitride semiconductor layer(12), and a second conductive nitride semiconductor layer(14) is formed on the active layer. Plural hexagonal nitride crystals(16) are formed on the second conductive nitride semiconductor layer, and have an inclined crystalline surface to the top surface of the second nitride semiconductor layer. A mask(15) is formed on the second conductive nitride semiconductor layer, and has plural windows at a center region of each nitride crystal.
Abstract translation: 提供氮化物半导体发光器件及其制造方法以提高从氮化物半导体的顶表面发射的光的光提取效率。 在第一导电氮化物半导体层（12）上形成有源层（13），在有源层上形成第二导电氮化物半导体层（14）。 多个六方晶氮化物晶体（16）形成在第二导电氮化物半导体层上，并且具有与第二氮化物半导体层的顶表面相对的倾斜晶体表面。 在第二导电氮化物半导体层上形成掩模（15），并且在每个氮化物晶体的中心区域具有多个窗口。
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公开(公告)号：KR1020080017180A
公开(公告)日：2008-02-26
申请号：KR1020060079001
申请日：2006-08-21
Applicant: 삼성전기주식회사
IPC: H01L33/10
Abstract: A semiconductor light emitting device is provided to focus effectively light and maximize light emitting efficiency by forming a multi-reflection layer having a high refractive index on a lower surface thereof. A semiconductor light emitting device includes a substrate(31) for growing a semiconductor single crystal and a first nitride semiconductor layer, an active layer(35), and a second nitride semiconductor layer(37). A multi-reflection layer(39) is formed by stacking alternately a first layer having a first refractive index and a second layer having a second refractive index. The second refractive index is lower than the first refractive index. A sub-mount(41) is attached on a lower surface of the multi-reflection layer by using an adhesive layer in order to mount a nitride semiconductor light emitting device.
Abstract translation: 提供一种半导体发光器件，用于通过在其下表面上形成具有高折射率的多反射层来有效地聚焦光并使发光效率最大化。 半导体发光器件包括用于生长半导体单晶的衬底（31）和第一氮化物半导体层，有源层（35）和第二氮化物半导体层（37）。 多反射层（39）通过交替堆叠具有第一折射率的第一层和具有第二折射率的第二层而形成。 第二折射率低于第一折射率。 为了安装氮化物半导体发光器件，通过使用粘合层将副安装座（41）安装在多反射层的下表面上。
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公开(公告)号：KR1020080017173A
公开(公告)日：2008-02-26
申请号：KR1020060078987
申请日：2006-08-21
Applicant: 삼성전기주식회사
IPC: H01L33/02
Abstract: A fabricating method of a nitride semiconductor light emitting device is provided to suppress a merged effect of a pyramid crystal structure by adjusting a window interval of a mask. A mask(23) having windows is formed on an upper surface of a base layer(22) including a first conductive type nitride semiconductor. A first conductive type nitride semiconductor crystal(24) of a hexagonal pyramid structure having an inclined crystal surface to an upper surface of the base layer is selectively grown on each of base layer regions exposed by the windows. An active layer(25) and a second conductive type nitride semiconductor layer(26) are sequentially grown on a surface of the first conductive type nitride semiconductor crystal. The mask is divided into at least two regions. The windows positioned on at least two regions are arranged at different intervals.
Abstract translation: 提供一种氮化物半导体发光器件的制造方法，通过调整掩模的窗口间隔来抑制金字塔晶体结构的合并效果。 在包括第一导电型氮化物半导体的基底层（22）的上表面上形成具有窗口的掩模（23）。 在由窗户露出的每个基底层区域上选择性地生长具有到基底层的上表面的倾斜晶体表面的六角锥体结构的第一导电型氮化物半导体晶体（24）。 在第一导电型氮化物半导体晶体的表面上依次生长有源层（25）和第二导电型氮化物半导体层（26）。 该掩模被分成至少两个区域。 位于至少两个区域上的窗口以不同的间隔布置。
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Patent Agency Ranking
公开(公告)号：KR1020080013636A
公开(公告)日：2008-02-13
申请号：KR1020060075407
申请日：2006-08-09
Applicant: 삼성전기주식회사
IPC: H01L33/16
CPC classification number: C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
Abstract: A method for selectively growing a nitride semiconductor, a nitride semiconductor light emitting device, and a method for manufacturing the same are provided to reduce generation of stress and to uniformly maintain a thickness of an active layer by employing an intermediate isolation region having a tilt angle greater than that of a crystal surface of the other region. A mask(M) having an opening unit(W) is formed on a nitride semiconductor layer(33). A hexagon pyramid nitride semiconductor crystal structure(34) is selectively grown on the nitride semiconductor layer region exposed by the opening unit of the mask. The hexagon pyramid nitride semiconductor crystal structure has a slope crystal surface for an upper surface of the nitride semiconductor layer. The hexagon pyramid nitride semiconductor crystal structure includes at least one intermediate isolation region(34b). The intermediate isolation region has a crystal surface of a tilt angle greater than that of the crystal surface located on the upper and lower portions of the hexagon pyramid nitride semiconductor crystal structure.
Abstract translation: 提供了选择性地生长氮化物半导体的方法，氮化物半导体发光器件及其制造方法，以通过采用具有倾斜角的中间隔离区域来减少应力的产生和均匀地保持有源层的厚度 大于其他区域的晶体表面的厚度。 具有开口单元（W）的掩模（M）形成在氮化物半导体层（33）上。 在由掩模的开口单元暴露的氮化物半导体层区域上选择性地生长六角锥氮化物半导体晶体结构（34）。 六角锥氮化物半导体晶体结构具有用于氮化物半导体层的上表面的倾斜晶体表面。 六角锥氮化物半导体晶体结构包括至少一个中间隔离区域（34b）。 中间隔离区具有大于位于六角锥形氮化物半导体晶体结构的上部和下部的晶体表面的倾斜角的晶体表面。
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公开(公告)号：KR1020080032882A
公开(公告)日：2008-04-16
申请号：KR1020060098964
申请日：2006-10-11
Applicant: 삼성전기주식회사
CPC classification number: H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light emitting diode package is provided to obtain high optical extraction efficiency by using an electrical insulating transparent fluid instead of a refractive index matching medium. A package substrate(41) includes a mounting area and a first and second wiring structures having exposed parts. The first and second wiring structures are formed in the mounting region. A light emitting diode(45) includes a first and second electrodes and is loaded in the mounting region so that the first and second electrodes are connected to a first and second bonding pads. A transparent member for cover is loaded in the mounting region of the package substrate. An electrical insulating transparent fluid(47) is used for filling a mounting space of the sealed light emitting diode. The electrical insulating transparent fluid has a refractive index smaller than a refractive index of a component of the light emitting diode.
Abstract translation: 提供发光二极管封装以通过使用电绝缘透明流体代替折射率匹配介质来获得高光学提取效率。 封装基板（41）包括安装区域和具有露出部分的第一和第二布线结构。 第一和第二布线结构形成在安装区域中。 发光二极管（45）包括第一和第二电极，并且被装载在安装区域中，使得第一和第二电极连接到第一和第二接合焊盘。 用于盖的透明构件装载在封装基板的安装区域中。 电绝缘透明流体（47）用于填充密封发光二极管的安装空间。 电绝缘透明流体的折射率小于发光二极管的分量的折射率。
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公开(公告)号：KR1020080083406A
公开(公告)日：2008-09-18
申请号：KR1020070023888
申请日：2007-03-12
Applicant: 삼성전기주식회사
IPC: H01L33/00
Abstract: An LED(Light Emitting Diode) light source module is provided to extend lifespan of an LED light source by dividedly forming a metal layer in an LED module unit and a circuit module unit on a rear surface of a PCB(Printed Circuit Board). An LED light source module(100) includes a PCB(110), LED modules(120), and circuit modules(130,140). An LED module unit(150a) and a circuit module unit(150b) are defined on the PCB. The PCB has electrodes of circuit patterns on an upper surface and a metal layer(150) insulated from the electrodes on a rear surface. The LED modules are formed in the LED module unit on the PCB and have terminal units electrically connected to the electrodes. The circuit modules are formed in the circuit module unit on the PCB and electrically connected to the LED modules through the circuit patterns to drive the LED modules.
Abstract translation: 提供LED（发光二极管）光源模块，以通过在LED模块单元中分开形成金属层和PCB（印刷电路板）的后表面上的电路模块单元来延长LED光源的寿命。 LED光源模块（100）包括PCB（110），LED模块（120）和电路模块（130,140）。 LED模块单元（150a）和电路模块单元（150b）被定义在PCB上。 PCB具有在上表面上的电路图案的电极和与后表面上的电极绝缘的金属层（150）。 LED模块形成在PCB上的LED模块单元中，并且具有电连接到电极的端子单元。 电路模块形成在PCB上的电路模块单元中，并通过电路图案与LED模块电连接以驱动LED模块。
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公开(公告)号：KR100843455B1
公开(公告)日：2008-07-03
申请号：KR1020060080337
申请日：2006-08-24
Applicant: 삼성전기주식회사
IPC: H01L33/22
Abstract: 본 발명은 광추출효율을 향상시킨 질화물 반도체 발광소자 및 제조방법에 관한 것으로, 본 발명에 따른 질화물 반도체 발광소자는, 제1 도전형 질화물 반도체층; 상기 제1 도전형 질화물 반도체층 상에 형성된 활성층; 상기 활성층 상에 형성된 제2 도전형 질화물 반도체층; 및 상기 제2 도전형 질화물 반도체층 상에 형성되며, 상기 제2 도전형 질화물 반도체층 상면에 대해 경사진 결정면을 갖는 복수의 육각 피라미드 질화물 결정체를 포함하는 것을 특징으로 한다.
피라미드, 질화물 결정체, 전반사, 발광, 요철, 광추출Abstract translation: 本发明涉及一种具有改善的光提取效率的氮化物半导体发光器件及其制造方法，并且根据本发明的氮化物半导体发光器件包括：第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层上的有源层; 在有源层上形成的第二导电型氮化物半导体层; 并且多个六角锥氮化物晶体形成在第二导电型氮化物半导体层上并且具有相对于第二导电型氮化物半导体层的上表面倾斜的晶面。
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公开(公告)号：KR100755610B1
公开(公告)日：2007-09-06
申请号：KR1020060088250
申请日：2006-09-12
Applicant: 삼성전기주식회사
IPC: H01L33/20
Abstract: A nitride semiconductor light emitting device having a pyramid structure and its fabricating method are provided to obtain easily a p-type nitride semiconductor layer having sufficient hall concentration in a light emitting portion of hexagonal pyramid structure. A p-type nitride semiconductor base layer(102) is formed on a substrate(101). A mask layer(103) having an opening is formed on the p-type nitride semiconductor. A light emitting portion(150) of a hexagonal pyramid structure is grown through the opening of the mask layer. The light emitting portion has a p-type nitride semiconductor crystal of hexagonal pyramid, an active layer(105) and an n-type nitride semiconductor layer.
Abstract translation: 提供具有棱锥体结构的氮化物半导体发光器件及其制造方法，以容易地获得在六角锥体结构的发光部分中具有足够的霍尔浓度的p型氮化物半导体层。 在基板（101）上形成p型氮化物半导体基底层（102）。 在p型氮化物半导体上形成具有开口的掩模层（103）。 通过掩模层的开口生长六角锥形结构的发光部分（150）。 发光部分具有六角锥的p型氮化物半导体晶体，有源层（105）和n型氮化物半导体层。
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