公开(公告)号：KR1020080000990A

公开(公告)日：2008-01-03

申请号：KR1020060058962

申请日：2006-06-28

Applicant: 삼성전자주식회사

Inventor： 홍형식 ,  허노현 ,  최해문 ,  박준호 ,  김광현 ,  강주호

IPC: H01L21/205

CPC classification number: C23C16/45574 ,  C23C16/45559 ,  C23C16/45565

Abstract: A substrate treatment apparatus is provided to uniformly spray a reaction gas on one surface of a wafer by symmetrically arranging first and second diffusion holes on the basis of a center of a wafer. An upper spray plate(320) is installed below an upper wall of a process chamber(10) to form an upper buffer in which a first gas stays. The upper spray plate has plural first diffusion holes for spraying the first gas and plural second diffusion holes for spraying a second gas. A lower spray plate(340) is installed below the upper spray plate to form a lower buffer in which the second gas stays. The lower spray plate has plural first spray holes for spraying the first gas and plural second spray holes for spraying the second gas. A first communication line(380) communicates the first diffusion holes with the first spray holes, and a second communication line(360) communicates second supply holes(18) with the second spray holes. The second supply holes correspond to a center of the substrate, and the first diffusion holes are symmetrical to the second diffusion holes.

Abstract translation: 提供了一种基板处理装置，用于通过基于晶片的中心对称地布置第一和第二扩散孔，将反应气体均匀地喷射在晶片的一个表面上。 上喷雾板（320）安装在处理室（10）的上壁下方，以形成其中第一气体停留的上缓冲器。 上喷射板具有用于喷射第一气体的多个第一扩散孔和用于喷射第二气体的多个第二扩散孔。 下喷雾板（340）安装在上部喷雾板的下方，形成下部缓冲器，其中第二种气体停留在其中。 下喷射板具有用于喷射第一气体的多个第一喷射孔和用于喷射第二气体的多个第二喷射孔。 第一通信线路（380）将第一扩散孔与第一喷射孔连通，第二连通线路（360）将第二供给孔（18）与第二喷射孔连通。 第二供给孔对应于基板的中心，第一扩散孔与第二扩散孔对称。

公开(公告)号：KR1020070064912A

公开(公告)日：2007-06-22

申请号：KR1020050125517

申请日：2005-12-19

Applicant: 삼성전자주식회사

Inventor： 홍형식 ,  원제형 ,  허노현 ,  금경수 ,  박영권 ,  김기곤 ,  강주호 ,  강경호 ,  최진호

IPC: C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: A shower head in which a plurality of process gases are mixed with each other to prevent an undesired reaction by-product from being generated is provided. A shower head(100) of a chemical vapor deposition apparatus comprises: an upper plate(103a) connected to first and second process gas supply pipes(121,122); an intermediate plate(103b) which is connected to the bottom of the upper plate through brazing by means of a filler metal(150), wherein the intermediate plate has a first process gas diffusing part(131) formed by connecting the intermediate plate to the upper plate to diffuse a first process gas supplied through the first process gas supply pipe, a plurality of first process gas channels(132) communicating with the first process gas diffusing part, a port(130) which is in communication with the second process gas supply pipe, and in which a second process gas channel(142) is formed, and second process gas diffusing parts(141) formed for diffusing a second process gas delivered through the second process gas channel; and a lower plate(103c) which is connected to the bottom of the intermediate plate through brazing by means of the filler metal, wherein the lower plate has a plurality of first process gas ejection holes(133) communicating with the first process gas channels, and a plurality of second process gas ejection holes(143) communicating with the second process gas diffusing parts.

Abstract translation: 提供了一种淋浴头，其中多个处理气体彼此混合以防止产生不期望的反应副产物。 化学气相沉积设备的喷头（100）包括：连接到第一和第二工艺气体供应管（121,122）的上板（103a）; 中间板（103b），其通过钎料（150）与所述上板的底部连接，其中所述中间板具有通过将所述中间板连接到所述中间板而形成的第一工艺气体扩散部（131） 上板，用于扩散通过第一工艺气体供应管供应的第一工艺气体;与第一工艺气体扩散部分连通的多个第一工艺气体通道（132），与第二工艺气体连通的端口（130） 供给管，其中形成有第二处理气体通道（142）;以及第二处理气体扩散部（141），其形成为扩散通过第二处理气体通道输送的第二处理气体; 和通过所述填充金属钎焊连接到所述中间板的底部的下板（103c），其中所述下板具有与所述第一工艺气体通道连通的多个第一工艺气体喷射孔（133） 以及与第二处理气体扩散部连通的多个第二处理气体喷出孔（143）。

公开(公告)号：KR2019890003490U

公开(公告)日：1989-04-13

申请号：KR2019870010875

申请日：1987-07-03

Applicant: 삼성전자주식회사

Inventor： 강주호

IPC: G11B20/02