公开(公告)号：KR101930751B1

公开(公告)日：2019-03-12

申请号：KR1020120086322

申请日：2012-08-07

Applicant: 삼성전자주식회사

Inventor： 박동일 ,  김애경 ,  김종삼 ,  엄경은 ,  이태철 ,  정용상 ,  정진하

IPC: H01L29/78 ,  H01L21/336

公开(公告)号：KR1020140021104A

公开(公告)日：2014-02-20

申请号：KR1020120086322

申请日：2012-08-07

Applicant: 삼성전자주식회사

Inventor： 박동일 ,  김애경 ,  김종삼 ,  엄경은 ,  이태철 ,  정용상 ,  정진하

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L21/823468 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/7834

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a ball connected to the trench in the device isolation region, a first mask pattern protruding from the inner side of the ball and formed along the side wall of the trench, a gate insulting layer formed along the side of the ball, and a gate electrode filling at least part of the trench and the ball.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括器件隔离区域，形成在器件隔离区域中的沟槽，与器件隔离区域中的沟槽连接的球体，从球体的内侧突出并沿着其的侧壁形成的第一掩模图案 沟槽，沿着球的侧面形成的栅极绝缘层，以及填充沟槽和球的至少一部分的栅电极。