公开(公告)号：KR1020140102782A

公开(公告)日：2014-08-25

申请号：KR1020130015605

申请日：2013-02-14

Applicant: 삼성전자주식회사

Inventor： 이동윤 ,  문준영 ,  박동일 ,  정석용 ,  황보영

IPC: H01L21/677 ,  B65G49/07 ,  B25J15/08

CPC classification number: H01L21/6838 ,  H01L21/68707 ,  H01L21/67742 ,  B25J15/0616 ,  B25J15/0683

Abstract: A blade for transporting a wafer comprises a body to support a wafer, and an absorbing unit which is formed on the body and equipped with a vacuum hole to absorb the wafer by generating vacuum pressure. The body comprises a metallic oxide to prevent static. The metallic oxide can be TiO2. As the blade for transporting a wafer includes a metallic oxide of which electric insulation resistance is relatively lower, the static can be effectively prevented in transporting a wafer which completed implant and ashing processes.

Abstract translation: 用于输送晶片的刀片包括用于支撑晶片的主体和形成在本体上并配备有真空孔以吸收晶片的吸收单元，该吸收单元通过产生真空压力来吸收晶片。 身体包括金属氧化物以防止静电。 金属氧化物可以是二氧化钛。 由于用于输送晶片的刀片包括电绝缘电阻相对较低的金属氧化物，因此可以有效地防止在输送完成植入物和灰化过程的晶片时的静电。

公开(公告)号：KR1020140021104A

公开(公告)日：2014-02-20

申请号：KR1020120086322

申请日：2012-08-07

Applicant: 삼성전자주식회사

Inventor： 박동일 ,  김애경 ,  김종삼 ,  엄경은 ,  이태철 ,  정용상 ,  정진하

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L21/823468 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/7834

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a ball connected to the trench in the device isolation region, a first mask pattern protruding from the inner side of the ball and formed along the side wall of the trench, a gate insulting layer formed along the side of the ball, and a gate electrode filling at least part of the trench and the ball.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括器件隔离区域，形成在器件隔离区域中的沟槽，与器件隔离区域中的沟槽连接的球体，从球体的内侧突出并沿着其的侧壁形成的第一掩模图案 沟槽，沿着球的侧面形成的栅极绝缘层，以及填充沟槽和球的至少一部分的栅电极。

公开(公告)号：KR101930751B1

公开(公告)日：2019-03-12

申请号：KR1020120086322

申请日：2012-08-07

Applicant: 삼성전자주식회사

Inventor： 박동일 ,  김애경 ,  김종삼 ,  엄경은 ,  이태철 ,  정용상 ,  정진하

IPC: H01L29/78 ,  H01L21/336

公开(公告)号：KR1020110124584A

公开(公告)日：2011-11-17

申请号：KR1020100044053

申请日：2010-05-11

Applicant: 삼성전자주식회사

Inventor： 박동일 ,  조준호 ,  이태철 ,  정용상 ,  박은정 ,  김영목 ,  이석주

IPC: H01L21/335 ,  H01L29/78

CPC classification number: H01L29/4238 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66628 ,  H01L29/78696

Abstract: PURPOSE: A semiconductor device including a recess channel transistor and a manufacturing method thereof are provided to simplify a semiconductor device manufacturing process by simultaneously forming a gate part and at least one gate contact. CONSTITUTION: A trench(110) for isolating a device is formed on a substrate(100). A device isolation layer(112A) is formed in the trench for isolating the device. The device isolation layer defines a pair of source/drain areas on the substrate. A gate pattern(152A) is formed in the trench for isolating the device on the pair of the source/drain areas. A gate insulation layer(150A) is formed between the substrate and the gate pattern.

Abstract translation: 目的：提供包括凹槽型晶体管及其制造方法的半导体器件，以通过同时形成栅极部分和至少一个栅极接触来简化半导体器件制造工艺。 构成：用于隔离器件的沟槽（110）形成在衬底（100）上。 在沟槽中形成器件隔离层（112A），用于隔离器件。 器件隔离层在衬底上限定一对源极/漏极区域。 在沟槽中形成栅极图案（152A），用于隔离一对源极/漏极区域上的器件。 在衬底和栅极图案之间形成栅极绝缘层（150A）。