公开(公告)号：KR1020000019710A

公开(公告)日：2000-04-15

申请号：KR1019980037949

申请日：1998-09-15

Applicant: 삼성전자주식회사

Inventor： 김자현 ,  김흥태

IPC: H01L21/205

Abstract: PURPOSE: A reaction chamber is provided to present the convenience for assembling the chamber. CONSTITUTION: A reaction chamber(200) is disclosed. The chamber(200) comprises a pair of plate located parallel and composing top and bottom of the chamber and chamber ring located between the plates forming body part of the chamber. In the chamber is at least a pair of align guide(100). The location of the guide(180) can be decided by the standardization of assembling work to the chamber(200). The align guide(180) can be supplied in the shape of thrust formed on the bottom plane of the chamber. The distance of isolation may be decided by the diameter of chamber ring. The work for assembling and equipment could be done easily.

Abstract translation: 目的：提供反应室以提供组装室的便利。 构成：公开了一种反应室（200）。 该室（200）包括一对平行并且构成该室的顶部和底部的板，以及位于形成室的主体部分的板之间的室环。 在腔室中至少有一对校准引导件（100）。 引导件（180）的位置可以通过对室（200）的组装工作的标准化来确定。 对准引导件（180）可以以形成在腔室底平面上的推力形式提供。 隔离距离可以由室环的直径决定。 组装和设备的工作可以轻松完成。

公开(公告)号：KR1020080006090A

公开(公告)日：2008-01-16

申请号：KR1020060064792

申请日：2006-07-11

Applicant: 삼성전자주식회사

Inventor： 김진성 ,  김대현 ,  김자현 ,  문석훈 ,  백홍주 ,  이재혁

IPC: H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/56 ,  H01L21/6715

Abstract: A guide cup of an apparatus for coating a wafer is provided to prevent or suppress an NRD(Negative Resist Developer) solution from being dropped to a surface of the wafer. A guide cup(100) of an apparatus for coating a wafer is provided in a standard cup. The standard cup is used for coating the wafer by injecting chemicals to a top part of the wafer. An inclination angle between an inner periphery(132) and an outer periphery(134) is substantially 68 degrees. The guide cup of the apparatus for coating the wafer is cut so that the inclination angle between the inner periphery and the outer periphery is larger than 60 degrees. A diameter of the inner periphery of the cup guide is formed larger than 205.6cm. The diameter of the inner periphery is substantially 215.6cm. A height of the guide cup is substantially 24.8cm.

Abstract translation: 提供了一种用于涂覆晶片的装置的引导杯，以防止或抑制NRD（阴性抗蚀剂显影剂）溶液滴落到晶片的表面。 用于涂覆晶片的装置的引导杯（100）设置在标准杯中。 标准杯用于通过将化学品注入到晶片的顶部来涂覆晶片。 内周（132）与外周（134）之间的倾斜角大致为68度。 切割用于涂覆晶片的装置的引导杯，使得内周和外周之间的倾斜角度大于60度。 杯形引导件的内周的直径形成为大于205.6cm。 内周的直径大致为215.6cm。 引导杯的高度基本上为24.8cm。

公开(公告)号：KR1020070113783A

公开(公告)日：2007-11-29

申请号：KR1020060047517

申请日：2006-05-26

Applicant: 삼성전자주식회사

Inventor： 윤주환 ,  김대현 ,  김자현 ,  이재혁

IPC: H01L21/205

CPC classification number: H01L21/67253 ,  C23C16/4586 ,  H01L21/6833

Abstract: An apparatus for checking a leak of a cathode part in CVD equipment is provided to solve a problem generated by a breakdown of CVD equipment by reducing or minimizing a helium leak phenomenon of CVD equipment caused by a setting error of a cathode part. A cathode part(102) is installed in an inner space formed in a leak check part(100) for checking a leak. A gas detector injects gas to the cathode part to detect whether gas leaks from the cathode part. The gas check part can include a body part and a support part coupled to the lower part of the body part. A space for installing the cathode part is formed in the body part. The body part is supported by the support part.

Abstract translation: 提供一种用于检查CVD设备中的阴极部分的泄漏的装置，以通过减少或最小化由阴极部分的设定误差引起的CVD设备的氦泄漏现象来解决由CVD设备的击穿而产生的问题。 阴极部分（102）安装在形成在泄漏检查部分（100）中用于检查泄漏的内部空间中。 气体检测器将气体喷射到阴极部分，以检测气体是否从阴极部分泄漏。 气体检查部件可以包括主体部分和联接到主体部分的下部的支撑部分。 用于安装阴极部分的空间形成在主体部分中。 主体部分由支撑部分支撑。