公开(公告)号：KR1020100115474A

公开(公告)日：2010-10-28

申请号：KR1020090034066

申请日：2009-04-20

Applicant: 삼성전자주식회사

Inventor： 박지만 ,  김영호 ,  윤효진 ,  안선열 ,  이송세 ,  박경우

IPC: G03F7/004

CPC classification number: G03F7/0048 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/202

Abstract: PURPOSE: A method for forming micro pattern and photoresist composition are provided to enhance resolution of the pattern and to reduce pattern defect. CONSTITUTION: A method for forming a micro pattern comprises: a step of applying a photoresist composition on the substrate(20) to form photoresist film(22); a step of exposing the photoresist film to the light; and a step of developing the photoresist film using aqueous alkali developing liquid to form a photoresist pattern. The photoresist composition contains: a hydrophobic first repeat unit having a side chain with 3 or more hydroxyl group-substituted heterocyclic ring; a polymeric polymer resist additive having hydrophobic second repeat unit; a polymer having an acid-labile protection group at the side chain; photoacid generator; and solvent.

Abstract translation: 目的：提供形成微图案和光致抗蚀剂组合物的方法以增强图案的分辨率并减少图案缺陷。 构成：形成微图案的方法包括：将光致抗蚀剂组合物施加在基底（20）上以形成光致抗蚀剂膜（22）的步骤; 将光致抗蚀剂膜曝光的步骤; 以及使用水性碱性显影液显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤。 光致抗蚀剂组合物含有：具有3个以上羟基取代杂环的侧链的疏水性第一重复单元; 具有疏水性第二重复单元的聚合物聚合物抗蚀剂添加剂; 在侧链具有酸不稳定保护基的聚合物; 光酸发生器; 和溶剂。

公开(公告)号：KR101585996B1

公开(公告)日：2016-01-18

申请号：KR1020090034066

申请日：2009-04-20

Applicant: 삼성전자주식회사

Inventor： 박지만 ,  김영호 ,  윤효진 ,  안선열 ,  이송세 ,  박경우

IPC: G03F7/004

CPC classification number: G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

Abstract: 포토레지스트조성물, 이를이용한미세패턴의형성방법및 반도체장치의제조방법에있어서, 기판상에, (a) (a-1) 지방족탄화수소주쇄및 산소를헤테로원자로가지고 3개이상의수산기로치환된헤테로싸이클릭고리를포함하는측쇄로이루어지는친수성제1 반복단위, 및 (a-2) 지방족탄화수소주쇄및 불소화된지방족탄화수소기를포함하는측쇄로이루어지는소수성제2 반복단위를포함하는고분자성포토레지스트첨가제, (b) 산분해성보호기를측쇄에포함하는고분자, (c) 광산발생제및 (d) 용매를포함하는포토레지스트조성물을도포하여포토레지스트막을형성한다. 포토레지스트막을노광한후에, 포토레지스트막을현상액을사용하여현상하여포토레지스트패턴을형성할수 있다. 패턴의해상도를높일수 있고, 포토레지스트잔류물로인한패턴결함을줄일수 있다.