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公开(公告)号：KR1020140010691A
公开(公告)日：2014-01-27
申请号：KR1020120077280
申请日：2012-07-16
Applicant: 삼성전자주식회사
Abstract: Provided is an organic solution coating apparatus including a nozzle which has a super oil repellent surface. According to an embodiment of the present invention specification, the coating apparatus may include a rotary chuck and an organic solution supply nozzle which has a super oil repellent surface. A substrate is attached and fixed on the rotary chuck. The super oil repellent surface supplies an organic solution to the substrate and has a contact angle of 90 degrees or more with the organic solution.
Abstract translation: 本发明提供一种具有超级斥油面的喷嘴的有机溶液涂布装置。 根据本发明的实施例，涂布装置可以包括具有超级拒油表面的旋转卡盘和有机溶液供给喷嘴。 将基板安装并固定在旋转卡盘上。 超级拒油表面向基材供给有机溶液，并且与有机溶液接触角为90度以上。
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公开(公告)号：KR1020100115474A
公开(公告)日：2010-10-28
申请号：KR1020090034066
申请日：2009-04-20
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/0048 , G03F7/0046 , G03F7/0392 , G03F7/004 , G03F7/0045 , G03F7/20 , G03F7/202
Abstract: PURPOSE: A method for forming micro pattern and photoresist composition are provided to enhance resolution of the pattern and to reduce pattern defect. CONSTITUTION: A method for forming a micro pattern comprises: a step of applying a photoresist composition on the substrate(20) to form photoresist film(22); a step of exposing the photoresist film to the light; and a step of developing the photoresist film using aqueous alkali developing liquid to form a photoresist pattern. The photoresist composition contains: a hydrophobic first repeat unit having a side chain with 3 or more hydroxyl group-substituted heterocyclic ring; a polymeric polymer resist additive having hydrophobic second repeat unit; a polymer having an acid-labile protection group at the side chain; photoacid generator; and solvent.
Abstract translation: 目的：提供形成微图案和光致抗蚀剂组合物的方法以增强图案的分辨率并减少图案缺陷。 构成：形成微图案的方法包括：将光致抗蚀剂组合物施加在基底（20）上以形成光致抗蚀剂膜（22）的步骤; 将光致抗蚀剂膜曝光的步骤; 以及使用水性碱性显影液显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤。 光致抗蚀剂组合物含有：具有3个以上羟基取代杂环的侧链的疏水性第一重复单元; 具有疏水性第二重复单元的聚合物聚合物抗蚀剂添加剂; 在侧链具有酸不稳定保护基的聚合物; 光酸发生器; 和溶剂。
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3.发明公开
公开(公告)号：KR1020090067092A
公开(公告)日：2009-06-24
申请号：KR1020080129565
申请日：2008-12-18
Applicant: 삼성전자주식회사
IPC: G03F7/11
CPC classification number: G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128 , G03F7/11
Abstract: A composition for anti-reflective coating containing a polymer for anti-reflective coating is provided to form the pattern of excellent profile by regulating the diffusion of acid in an anti-reflective coating film. A polymer for anti-reflective coating comprises a first repeating unit containing basic functional group of the chemical formula 1, a second repeating unit having a light absorbing functional group and a third repeating unit having crosslinking functional group. In the chemical formula 1, R1 is hydrogen or low alkyl group of C1-C4; X is alkylene, arylene, oxyakylene, alkyleneoxy, oxyarylene, aryleneoxy, carbonyl, oxy, oxycarbonyl, carbonyloxy, carbonyl alkylene, carbonyl arylene, alkylene carbonyl, arylene carbonyl and bivalent selected from them.
Abstract translation: 提供含有抗反射涂层用聚合物的抗反射涂层用组合物，以通过调节抗反射涂膜中酸的扩散来形成优异轮廓的图案。 用于抗反射涂层的聚合物包括含有化学式1的碱性官能团的第一重复单元，具有光吸收官能团的第二重复单元和具有交联官能团的第三重复单元。 在化学式1中，R1是C1-C4的氢或低级烷基; X是亚烷基，亚芳基，氧亚烷基，亚烷氧基，氧亚芳基，亚芳氧基，羰基，氧基，氧羰基，羰氧基，羰基亚烷基，羰基亚芳基，亚烷基羰基，亚芳基羰基和选自它们的二价。
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公开(公告)号：KR1020080092154A
公开(公告)日：2008-10-15
申请号：KR1020070035669
申请日：2007-04-11
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0275 , G03F7/2004 , G03F7/7045 , G03F7/70466
Abstract: A method for forming fine patterns of a semiconductor device is provided to store energy in a photoresist layer even if smaller energy is projected than threshold energy, thereby obtaining the desired fine patterns. A method for forming fine patterns of a semiconductor device comprises the steps of: forming a photoresist layer having threshold energy on a semiconductor substrate(101), the threshold energy corresponding to minimum exposure energy to react to the photoresist layer chemically; projecting a first light having a first energy which is lower than the threshold energy to a first region of the photoresist layer to form a preliminary exposure region maintaining the first energy, the preliminary exposure region limiting a non-exposure region; projecting a second light having a second energy which is lower than the threshold energy to a second region in the preliminary exposure region and to the non-exposure region to convert the second region into an exposure region, the sum of the first and second energies the same and higher as/than the threshold energy; and removing the exposure region selectively to form photoresist patterns(110).
Abstract translation: 提供了一种用于形成半导体器件的精细图案的方法，用于在光刻胶层中存储能量，即使投射的能量小于阈值能量，从而获得所需的精细图案。 一种用于形成半导体器件的精细图案的方法包括以下步骤：在半导体衬底（101）上形成具有阈值能量的光致抗蚀剂层，对应于最小曝光能量的阈值能量与光刻胶层化学反应; 将具有低于阈值能量的第一能量的第一光投射到光致抗蚀剂层的第一区域，以形成保持第一能量的初步曝光区域，该预曝光区域限制非曝光区域; 将具有低于阈值能量的第二能量的第二光投射到预曝光区域中的第二区域和将非曝光区域投影到第二区域以将第二区域转换为曝光区域，第一和第二能量之和 相同和高于阈值能量; 并选择性地去除曝光区域以形成光致抗蚀剂图案（110）。
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Patent Agency Ranking
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6.发明授权
公开(公告)号：KR101585992B1
公开(公告)日：2016-01-19
申请号：KR1020080129565
申请日：2008-12-18
Applicant: 삼성전자주식회사
IPC: G03F7/11
CPC classification number: G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128
Abstract: 반사방지코팅용고분자, 반사방지코팅용조성물및 이를이용한반도체장치의패턴형성방법에있어서, 반사방지코팅용조성물은기판상에염기성작용기를포함하는제1 반복단위, 흡광성작용기를포함하는제2 반복단위및 가교결합작용기를포함하는제3 반복단위를구비하는반사방지코팅용고분자, 광산발생제, 가교제및 용매를포함한다. 측쇄에염기성작용기가화학적으로결합된반사방지코팅용고분자를이용함으로써반사방지코팅막내에서의산의확산을적절히조절하여프로파일이우수한패턴을형성할수 있다.
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公开(公告)号：KR101585996B1
公开(公告)日：2016-01-18
申请号：KR1020090034066
申请日：2009-04-20
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/0048 , G03F7/0046 , G03F7/0392
Abstract: 포토레지스트조성물, 이를이용한미세패턴의형성방법및 반도체장치의제조방법에있어서, 기판상에, (a) (a-1) 지방족탄화수소주쇄및 산소를헤테로원자로가지고 3개이상의수산기로치환된헤테로싸이클릭고리를포함하는측쇄로이루어지는친수성제1 반복단위, 및 (a-2) 지방족탄화수소주쇄및 불소화된지방족탄화수소기를포함하는측쇄로이루어지는소수성제2 반복단위를포함하는고분자성포토레지스트첨가제, (b) 산분해성보호기를측쇄에포함하는고분자, (c) 광산발생제및 (d) 용매를포함하는포토레지스트조성물을도포하여포토레지스트막을형성한다. 포토레지스트막을노광한후에, 포토레지스트막을현상액을사용하여현상하여포토레지스트패턴을형성할수 있다. 패턴의해상도를높일수 있고, 포토레지스트잔류물로인한패턴결함을줄일수 있다.
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公开(公告)号：KR1020150124160A
公开(公告)日：2015-11-05
申请号：KR1020140050630
申请日：2014-04-28
Applicant: 삼성전자주식회사
IPC: C09D183/04 , H01B3/46
Abstract: 다공성유전막형성용조성물의제조방법에서, 실리콘전구체의적어도 1 이상의말단기에화학식 1로표시되는기공생성물질을결합한다. 기공생성물질이결합된실리콘전구체들을축합반응시켜실리콘중합체를형성한다. 실리콘중합체및 용매를혼합한다. (상기화학식 1에서, p는 4 내지 80의정수이고, q는 2 내지 40의정수이며, r은 8 내지 160의정수이다.)
Abstract translation: 用于形成多孔电介质层的组合物的方法将由C_pH_qO_r呈现的孔形成材料与硅前体的至少一个末端基团连接。 通过与孔形成材料偶联的硅前体的缩合反应形成硅聚合物，并将硅聚合物和溶剂混合。 在C_pH_qO_r中：p是4到80的整数; q为2〜40的整数; r为8〜160的整数。
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公开(公告)号：KR1020140092017A
公开(公告)日：2014-07-23
申请号：KR1020130004196
申请日：2013-01-15
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/3088 , H01L21/0274 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1683 , C23C16/06 , H01L21/76876
Abstract: In a method of forming a pattern, a lower film which includes a silicon compound which contains a photoacid-foaming agent on an etch object film. A photosensitive film is formed on the lower film. A pattern of the photosensitive film is formed by emitting extreme ultraviolet (EUV) to the photosensitive film. The etch object film is etched by using the pattern of the photosensitive film as an etch mask. Therefore, the present invention can improve resolution, sensitivity, and efficiency and simplifies processes when forming a fine pattern.
Abstract translation: 在形成图案的方法中，包括在蚀刻对象膜上含有光致酸发泡剂的硅化合物的下部膜。 在下膜上形成感光性膜。 感光膜的图案通过向感光膜发射极紫外（EUV）而形成。 通过使用感光膜的图案作为蚀刻掩模蚀刻蚀刻对象膜。 因此，本发明可以在形成精细图案时提高分辨率，灵敏度和效率，并简化工艺。
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