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公开(公告)号：KR1020090084218A
公开(公告)日：2009-08-05
申请号：KR1020080010262
申请日：2008-01-31
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/06 , G11C13/0004 , H01L45/141
Abstract: A variable resistance memory device is provided to suppress the resistance drift phenomenon by suppressing the volume expansion in the state change. The first conductive pattern(112) is formed on a substrate(100). A resistance alteration pattern(124) is formed on the first conductive pattern. The first stress buffer pattern(122) contacts with the resistance alteration pattern. The second conductive pattern(132) is formed on the resistance alteration pattern. The second stress buffer pattern contacts with the side of the resistance alteration pattern or a part among the lower surface of the resistance alteration pattern.
Abstract translation: 提供了一种可变电阻存储器件，通过抑制状态变化中的体积膨胀来抑制电阻漂移现象。 第一导电图案（112）形成在基板（100）上。 电阻变化图案（124）形成在第一导电图案上。 第一应力缓冲图案（122）与电阻变化图案接触。 第二导电图案（132）形成在电阻变化图案上。 第二应力缓冲图案与电阻变化图案的一侧或电阻变化图案的下表面中的一部分接触。
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公开(公告)号：KR1020090020943A
公开(公告)日：2009-02-27
申请号：KR1020070085591
申请日：2007-08-24
Applicant: 삼성전자주식회사
IPC: G11C13/02
CPC classification number: G11C11/56 , G11C11/5678 , G11C13/0004
Abstract: A variable resistance memory device and an operating method thereof are provided to suppress a resistance drift by setting a write current direction and a read current direction opposite to the write current direction. A write current applying process is performed to apply write current(Fwd_W) in order to program a phase change material. A read current applying process is performed to apply read current in order to read data stored in the phase change material. A write current direction is opposite to a read current direction(Rvs_R).
Abstract translation: 提供一种可变电阻存储器件及其操作方法，通过设置与写入电流方向相反的写入电流方向和读取电流方向来抑制电阻漂移。 执行写入电流施加处理以施加写入电流（Fwd_W）以编程相变材料。 执行读取电流施加处理以施加读取电流，以便读取存储在相变材料中的数据。 写入电流方向与读取电流方向（Rvs_R）相反。
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公开(公告)号：KR101647302B1
公开(公告)日：2016-08-10
申请号：KR1020090115190
申请日：2009-11-26
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01R31/2889
Abstract: 검사신뢰성을향상시킬수 있는프로브카드및 이를포함하는테스트장치에관해개시한다. 이를위해본 발명은, 각각이입력신호를수신하는적어도하나의입력단; 각각이출력신호를송신하는적어도하나의출력단; 입력신호를웨이퍼의입력패드에전달하는입력프로브핀; 출력신호를웨이퍼의출력패드로부터수신하는출력프로브핀; 입력단과입력프로브핀 사이에위치하며, 동작신호를수신하는제어부및 입력단과입력프로브핀을전기적으로연결시키는접속부를포함하는적어도하나의입력단멤스스위치; 및출력단과출력프로브핀 사이에위치하며, 동작신호를수신하는제어부및 출력단과출력프로브핀을전기적으로연결시키는접속부를포함하는적어도하나의출력단멤스스위치를포함한다.
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公开(公告)号：KR1020110058409A
公开(公告)日：2011-06-01
申请号：KR1020090115190
申请日：2009-11-26
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01R31/2889
Abstract: PURPOSE: A probe card and test device with the same are provided to form a MEMS(Micro Electro Mechanical Systems) switch and a probe pin in the same probe card, thereby increasing inspection reliability by minimizing the distance between the MEMS switch and the probe pin. CONSTITUTION: A first input terminal(10a) and a second input terminal(10b) receive a first input signal and a second input signal. A first input terminal MEMS switch(20a) is located between the first input terminal and an input probe pin(50). A second input terminal MEMS switch(20b) is located between the second input terminal and the input probe pin. The first and second input terminal MEMS switches comprise a controller(5) and a connection unit(6). A first output terminal MEMS switch(90a) is located between a first output terminal(100a) and an output probe pin(60). A second output terminal MEMS switch(90b) is located between a second output terminal(100b) and the output probe pin.
Abstract translation: 目的：提供探针卡和测试装置，以在相同的探针卡中形成MEMS（微机电系统）开关和探针，从而通过最小化MEMS开关与探针之间的距离来提高检测可靠性 。 构成：第一输入端子（10a）和第二输入端子（10b）接收第一输入信号和第二输入信号。 第一输入端MEMS开关（20a）位于第一输入端和输入探针（50）之间。 第二输入端子MEMS开关（20b）位于第二输入端子和输入探针之间。 第一和第二输入端子MEMS开关包括控制器（5）和连接单元（6）。 第一输出端子MEMS开关（90a）位于第一输出端子（100a）和输出探针（60）之间。 第二输出端子MEMS开关（90b）位于第二输出端子（100b）和输出探针之间。
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公开(公告)号：KR1020090036769A
公开(公告)日：2009-04-15
申请号：KR1020070102004
申请日：2007-10-10
Applicant: 삼성전자주식회사
CPC classification number: G11C13/0004 , G11C13/004 , G11C13/0069
Abstract: A method for operating a phase change random access memory and the phase change random access memory operated thereby are provided to cool the data storage element which is programmed by using the Pettier effect. The first write current(IP1) is applied to the data storage element for the designated time. The first write current is the impulse current having the predetermined size. The direction of the first write current is the negative direction or the positive direction. The first write current is applied to the phase change material film(G) for the predetermined time. The temperature of the phase transformation region is instantaneously increased over the phase transformation temperature. The phase transformation region is phase-transformed into the amorphous state by the first write current. The phase change material film is programmed to the reset status.
Abstract translation: 提供一种用于操作相变随机存取存储器和由其操作的相变随机存取存储器的方法以冷却通过使用Pettier效应编程的数据存储元件。 在指定时间内，第一个写入电流（IP1）被应用于数据存储元件。 第一写入电流是具有预定尺寸的脉冲电流。 第一个写入电流的方向是负方向或正方向。 将第一写入电流施加到相变材料膜（G）预定时间。 在相变温度下相变温度瞬时增加。 相变区域通过第一写入电流被相变成非晶态。 相变材料膜被编程为复位状态。
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Patent Agency Ranking
公开(公告)号：KR101571148B1
公开(公告)日：2015-11-23
申请号：KR1020090082357
申请日：2009-09-02
Applicant: 삼성전자주식회사
CPC classification number: G11C13/004 , G11C13/0004 , G11C13/0007
Abstract: 저항메모리소자의저항측정방법및 저항측정시스템에서, 상기저항메모리소자의저항측정을위하여먼저데이터쓰기펄스를인가한후, 저항읽기펄스를인가한다. 상기저항읽기펄스를인가하였을때의펄스파형으로부터상기저항메모리소자의셀을통해강하되는미소전압하고, 이를이용하여저항메모리소자를측정한다. 상기방법에의하면, 저항메모리소자의셀에데이터를기록한직후의저항메모리소자의저항을정확하게측정할수 있다.
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公开(公告)号：KR1020100026413A
公开(公告)日：2010-03-10
申请号：KR1020080085402
申请日：2008-08-29
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L45/126 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1641 , H01L45/1683 , H01L45/04 , H01L45/143
Abstract: PURPOSE: A variable resistance memory device and a method for manufacturing the same are provided to stably maintain data which is stored in the variable resistance memory device by preventing the resistance drift phenomenon of a phase-change layer. CONSTITUTION: An insulation layer(11) is formed on a semiconductor substrate(10). A contact hole(15) is formed on the insulation layer. A lower electrode(12) is formed in the contact hole. A phase-change layer(13) which fills the contact hole is formed. A plasma process is performed to the phase-change layer in order to implant impurities. The amorphous state part of the phase-change layer includes the change index of a resistance depends on a time. The impurities reduce the change index.
Abstract translation: 目的：提供可变电阻存储器件及其制造方法，通过防止相变层的电阻漂移现象来稳定地保持存储在可变电阻存储器件中的数据。 构成：在半导体衬底（10）上形成绝缘层（11）。 在绝缘层上形成接触孔（15）。 下部电极（12）形成在接触孔中。 形成填充接触孔的相变层（13）。 对相变层进行等离子体处理以便植入杂质。 相变层的非晶态部分包括电阻的变化指数取决于时间。 杂质减少变化指数。
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公开(公告)号：KR1020160063586A
公开(公告)日：2016-06-07
申请号：KR1020140167003
申请日：2014-11-27
Applicant: 삼성전자주식회사
Abstract: 자기메모리장치는제1 자성물질패턴, 제2 자성물질패턴및 터널배리어막패턴을포함한다. 상기제1 자성물질패턴은기판상에배치된다. 상기제2 자성물질패턴은상기제1 자성물질패턴보다상부에배치된다. 상기터널배리어막패턴은상기제1 자성물질패턴과상기제2 자성물질패턴사이에배치된다. 상기제1 자성물질패턴의상면의폭은상기제2 자성물질패턴의하면의폭보다작다.
Abstract translation: 提供了具有优异的电气和机械可靠性的磁存储器件。 磁存储器件包括：第一磁性材料图案，第二磁性材料图案和隧道阻挡膜图案。 第一磁性材料图案设置在基板上。 第二磁性材料图形被布置在比第一磁性材料图案的上部。 隧道势垒膜图形布置在第一和第二磁性材料图案之间。 第一磁性材料图案的上表面的宽度小于第二磁性材料图案的下表面的宽度。
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公开(公告)号：KR101445333B1
公开(公告)日：2014-10-01
申请号：KR1020080085402
申请日：2008-08-29
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L45/126 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1641 , H01L45/1683
Abstract: 가변저항 메모리 장치의 형성방법이 제공된다. 상기 가변저항 메모리 장치의 형성방법은 반도체 기판 상에 상변화층을 형성하고, 상변화층에 플라즈마 처리 공정을 수행하여 불순물을 주입하는 것을 포함한다. 상변화층의 적어도 일부가 비정질 상태일 때, 불순물은 저항의 변동지수를 감소시킬 수 있다.
상변화층, 저항, 드리프트, 멀티-레벨-
公开(公告)号：KR101374319B1
公开(公告)日：2014-03-17
申请号：KR1020070085591
申请日：2007-08-24
Applicant: 삼성전자주식회사
IPC: G11C13/02
CPC classification number: G11C11/56 , G11C11/5678 , G11C13/0004
Abstract: 본 발명은 가변 저항 메모리 장치의 동작 방법에 관한 것이다. 상기 가변 저항 메모리 장치는 상부 전극과 하부 전극 사이에 상 변화 물질을 갖는다. 상기 가변 저항 메모리 장치의 동작 방법은 상기 상부 전극에서 상기 하부 전극 방향으로 쓰기 전류를 인가하고, 상기 하부 전극에서 상기 상부 전극 방향으로 읽기 전류를 인가한다. 상기 쓰기 전류를 인가함으로 상기 상 변화 물질을 프로그램하고, 상기 읽기 전류를 인가함으로 상기 상 변화 물질의 저항 드리프트를 억제한다.
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