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公开(公告)号：KR1020170105874A
公开(公告)日：2017-09-20
申请号：KR1020160029091
申请日：2016-03-10
Applicant: 삼성전자주식회사
CPC classification number: H01L43/12 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: 본발명의기술적사상에의한메모리소자제조방법은, 제1 자화층을형성하는단계, 제1 자화층상에터널장벽층을형성하는단계, 터널장벽층상에제2 자화층을형성하는단계, 제1 자화층, 터널장벽층및 제2 자화층을패터닝하여자기터널접합구조물을형성하는단계및 자기터널접합구조물의측벽에붕소를주입하여붕소산화물을형성하는단계를포함하는것을특징으로한다.
Abstract translation: 根据本发明的技术构思的制造存储器件的方法包括以下步骤：形成第一磁化层，在第一磁化层上形成隧道势垒层，在隧道势垒层上形成第二磁化层， 通过图案化磁化层，隧道势垒层和第二磁化层来形成磁性隧道结结构;以及将硼注入到磁性隧道结结构的侧壁中以形成氧化硼。
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公开(公告)号：KR1020150124533A
公开(公告)日：2015-11-06
申请号：KR1020140050867
申请日：2014-04-28
Applicant: 삼성전자주식회사
IPC: H01L21/764 , H01L21/027 , H01L21/20
CPC classification number: H01L43/12 , H01L27/228 , H01L43/08
Abstract: 반도체소자의제조방법이제공된다. 기판상에도전필라들이형성되고, 상기도전필라들의사이에차례로희생층및 몰딩구조체가형성된다. 상기몰딩구조체상에상기도전필라들과연결되는도전층이형성되고상기희생층을제거하여에어갭이형성된다. 상기몰딩구조체를제거하여연장된에어갭이형성되고상기도전층을패터닝하여상기연장된에어갭이노출된다.
Abstract translation: 本发明提供一种制造半导体器件的方法。 导电柱形成在基板上，并且在导电柱之间依次形成牺牲层和模制结构。 连接到导电柱的导电层形成在模制结构上，消除牺牲层以形成气隙。 消除模制结构以形成膨胀的空气间隙，并且将导电层图案化以暴露膨胀的气隙。
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公开(公告)号：KR1020150116075A
公开(公告)日：2015-10-15
申请号：KR1020140040417
申请日：2014-04-04
Applicant: 삼성전자주식회사
IPC: G11C11/15 , H01L21/8246
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: 자기기억소자가제공된다. 자기기억소자는, 기판상에서로이격되어배치되는복수개의제1 자성패턴들, 상기제1 자성패턴들사이에배치되어상기제1 자성패턴들을정의하는제1 절연패턴, 및상기제1 자성패턴들및 상기제1 절연패턴을덮는터널배리어막을포함한다. 상기제1 절연패턴은상기제1 자성패턴들을구성하는자성원소와동일한자성원소를포함한다.
Abstract translation: 提供了一种磁存储器件。 所述磁存储器件包括：多个第一磁性图案，其彼此分开地布置在基板上; 布置在所述第一磁性图案之间并限定所述第一磁性图案的第一绝缘图案; 以及覆盖第一磁图案和第一绝缘图案的隧道阻挡膜。 第一绝缘图案包括与构成第一磁图案的磁性元件相同的磁性元件。
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公开(公告)号：KR101506171B1
公开(公告)日：2015-03-27
申请号：KR1020090010251
申请日：2009-02-09
Applicant: 삼성전자주식회사
IPC: H04W74/08
Abstract: 이동통신 시스템의 단말 랜덤 액세스 제어 방법이, 랜덤 액세스시 N_TA를 0으로 조정하고 프리앰블을 전송하는 과정과, 기지국으로 수신되는 메시지의 TA 명령에 맞춰서 역방향 전송 타이밍을 조정한 후, TA 타이머를 재시작하며, 기지국의 경합 해결 메시지를 수신을 대기하는 과정과, 상기 경합 해결 메시지 수신시 경합 해결에 실패하면 TA 타이머를 중지하고 프리앰블을 전송하면서 랜덤 액세스 과정을 재개하는 과정으로 이루어진다.
LTE (Long Term Evolution), TA (Timing Advance)-
公开(公告)号：KR1020140112682A
公开(公告)日：2014-09-24
申请号：KR1020130027037
申请日：2013-03-14
Applicant: 삼성전자주식회사
IPC: G11C11/15 , H01L21/8247 , H01L27/115
CPC classification number: H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08 , G11C11/15 , H01L27/222
Abstract: A manufacturing method for a magnetoresistive memory device includes a step of forming first and second patterns which are alternately and repeatedly arranged to be in contact with each other on a substrate. A first capping film is formed on the upper surface of the first and second patterns. A first opening is formed by removing a part of the first capping layer and the second pattern below the capping layer to expose the upper surface of the substrate. A source line filling the lower part of the first opening is formed. A second capping film pattern filling the upper part of the first opening is formed. A second opening is formed by removing a part of the first capping film and the second pattern below the part of the first capping film. A contact plug and a pad layer which are sequentially stacked on the substrate while filling the second opening are formed to be integrated together.
Abstract translation: 一种用于磁阻存储器件的制造方法包括形成交替重复地布置成在衬底上彼此接触的第一和第二图案的步骤。 在第一和第二图案的上表面上形成第一覆盖膜。 通过去除覆盖层下方的第一覆盖层和第二图案的一部分以暴露衬底的上表面而形成第一开口。 形成填充第一开口的下部的源极线。 形成填充第一开口的上部的第二封盖膜图案。 通过将第一封盖膜的一部分和第二图案移除到第一封盖膜的部分下方而形成第二开口。 在填充第二开口时顺序堆叠在基板上的接触塞和垫层形成为一体化。
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Patent Agency Ranking
公开(公告)号：KR1020140102849A
公开(公告)日：2014-08-25
申请号：KR1020130016227
申请日：2013-02-15
Applicant: 삼성전자주식회사
IPC: H04W48/16
CPC classification number: H04W48/16
Abstract: A method and apparatus of searching for an operator network in a multi-radio access technology (RAT) environment are disclosed. The method comprises the following steps: calculating a length of a sleep period to perform background public land mobile network (PLMN) searching; comparing the length of the sleep period with a predetermined reference parameter; performing background PLMN searching of a passive RAT during the sleep period if the length of the sleep period is greater than the reference parameter; and performing background PLMN searching of an active RAT during the sleep period if the length of the sleep period is equal to or less than the reference parameter. The reference parameter may be determined taking into account a minimum time required for RAT switching in a user terminal or determined as a length of a previous sleep period.
Abstract translation: 公开了一种在多无线电接入技术（RAT）环境中搜索运营商网络的方法和装置。 该方法包括以下步骤：计算进行背景公共陆地移动网（PLMN）搜索的睡眠周期的长度; 将睡眠周期的长度与预定的参考参数进行比较; 如果睡眠周期的长度大于参考参数，则在休眠期间执行无源RAT的背景PLMN搜索; 以及如果所述睡眠周期的长度等于或小于所述参考参数，则在所述睡眠周期期间执行所述活动RAT的背景PLMN搜索。 参考参数可以考虑用户终端中的RAT切换所需的最小时间或者确定为先前睡眠周期的长度来确定。
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公开(公告)号：KR1020120057717A
公开(公告)日：2012-06-07
申请号：KR1020100082207
申请日：2010-08-24
Applicant: 삼성전자주식회사
IPC: H04W52/04
CPC classification number: H04W52/365 , H04W72/0413
Abstract: PURPOSE: A power headroom information constitution method in a mobile communication system and apparatus therefor are provided to effectively transmit power headroom information for all component carriers to a base station. CONSTITUTION: A control message processing unit(1535) creates a control message including power headroom information for basic component carriers in case secondary component carriers are deactivated. The control message processing unit creates the control message in case the secondary component carriers are activated. The control message includes power headroom information for the secondary component carrier and the basic component carrier. A transmission and reception apparatus(1505) transmits the created message to a base station.
Abstract translation: 目的：提供一种移动通信系统及其装置中的功率余量信息构成方法，用于向基站有效发送所有分量载波的功率余量信息。 构成：控制消息处理单元（1535）在辅助分量载波被去激活的情况下创建包括用于基本分量载波的功率余量信息的控制消息。 控制消息处理单元在辅助分量载波被激活的情况下创建控制消息。 控制消息包括辅助分量载波和基本分量载波的功率余量信息。 发送和接收装置（1505）将创建的消息发送到基站。
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8.发明公开
公开(公告)号：KR1020110076764A
公开(公告)日：2011-07-06
申请号：KR1020100125403
申请日：2010-12-09
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1683
Abstract: PURPOSE: A phase change structure, a method for forming a phase change material layer, a phase change memory device, and a method for manufacturing a phase change memory device are provided to improve an operating speed and to enhance reliability by enhancing a data maintenance property and increasing a resistance margin of a set state and a reset state. CONSTITUTION: A first phase change material layer pattern(75) is used for partially a fine structure and includes a first phase change material. A second phase change material layer pattern(80) is used for filling the remaining part of the fine structure and includes a second phase change material having a composition different from the composition of the first phase change material. The content of at least one component of the second phase change material is larger than the content of the first phase change material.
Abstract translation: 目的：提供一种相变结构，形成相变材料层的方法，相变存储器件和相变存储器件的制造方法，以通过提高数据维护性能来提高操作速度和提高可靠性 并增加设定状态和复位状态的电阻余量。 构成：第一相变材料层图案（75）用于部分精细结构并且包括第一相变材料。 第二相变材料层图案（80）用于填充精细结构的剩余部分，并且包括具有与第一相变材料的组成不同的组成的第二相变材料。 第二相变材料的至少一种成分的含量大于第一相变材料的含量。
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公开(公告)号：KR1020100034240A
公开(公告)日：2010-04-01
申请号：KR1020080093269
申请日：2008-09-23
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/04 , G11C13/0004 , H01L27/2409 , H01L45/1233 , H01L45/1683
Abstract: PURPOSE: A variable resistance memory device and a manufacturing method thereof are provided to improve integration by forming one diode on a plurality of memory cells. CONSTITUTION: A selection element is formed on a semiconductor substrate. A variable resistance pattern(174) is electrically connected to the selection element. A plurality of heater electrodes(132,142,152) is separated from each other and contacts with the sidewall of the variable resistance pattern. The heater electrodes are stacked with different thicknesses.
Abstract translation: 目的：提供可变电阻存储器件及其制造方法，以通过在多个存储单元上形成一个二极管来改善积分。 构成：在半导体衬底上形成选择元件。 可变电阻图案（174）电连接到选择元件。 多个加热电极（132,142,152）彼此分离并与可变电阻图案的侧壁接触。 加热器电极以不同的厚度堆叠。
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公开(公告)号：KR1020090036769A
公开(公告)日：2009-04-15
申请号：KR1020070102004
申请日：2007-10-10
Applicant: 삼성전자주식회사
CPC classification number: G11C13/0004 , G11C13/004 , G11C13/0069
Abstract: A method for operating a phase change random access memory and the phase change random access memory operated thereby are provided to cool the data storage element which is programmed by using the Pettier effect. The first write current(IP1) is applied to the data storage element for the designated time. The first write current is the impulse current having the predetermined size. The direction of the first write current is the negative direction or the positive direction. The first write current is applied to the phase change material film(G) for the predetermined time. The temperature of the phase transformation region is instantaneously increased over the phase transformation temperature. The phase transformation region is phase-transformed into the amorphous state by the first write current. The phase change material film is programmed to the reset status.
Abstract translation: 提供一种用于操作相变随机存取存储器和由其操作的相变随机存取存储器的方法以冷却通过使用Pettier效应编程的数据存储元件。 在指定时间内，第一个写入电流（IP1）被应用于数据存储元件。 第一写入电流是具有预定尺寸的脉冲电流。 第一个写入电流的方向是负方向或正方向。 将第一写入电流施加到相变材料膜（G）预定时间。 在相变温度下相变温度瞬时增加。 相变区域通过第一写入电流被相变成非晶态。 相变材料膜被编程为复位状态。
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