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公开(公告)号：KR1020090093440A
公开(公告)日：2009-09-02
申请号：KR1020080018957
申请日：2008-02-29
Applicant: 삼성전자주식회사
CPC classification number: H03M1/664 , G09G3/3688 , G09G2310/027
Abstract: A digital to analog converter, a source driver and a liquid crystal display apparatus are provided to implement the high resolution by supplying the gamma voltage which is independent according to the channel. A digital to analog converter(360) comprises a decoder(410), gamma reference voltage decoding units(420,430) and active resistance string part(440). The decoder selects the second gamma voltages of (N-2-P) multiplication of 2 and supplies. The reference voltage decoding unit supplies the first and second gamma reference voltages. The active resistance string part is comprised of transistors. The transistor corresponds to a part among the second gamma voltages and has the same gate-source voltage. The source driver comprises a register part, a shift transistor part, a data latch part, a digital to analog converting part and an output buffer.
Abstract translation: 提供数模转换器，源极驱动器和液晶显示装置，通过提供根据通道独立的伽马电压来实现高分辨率。 数模转换器（360）包括解码器（410），伽马参考电压解码单元（420,430）和有源电阻串部分（440）。 解码器选择（N-2-P）乘以2的第二伽马电压和电源。 参考电压解码单元提供第一和第二伽马参考电压。 有源电阻串部分由晶体管组成。 晶体管对应于第二伽马电压中的一部分，并且具有相同的栅源电压。 源极驱动器包括寄存器部分，移位晶体管部分，数据锁存部分，数模转换部分和输出缓冲器。
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公开(公告)号：KR100486292B1
公开(公告)日：2005-04-29
申请号：KR1020020084241
申请日：2002-12-26
Applicant: 삼성전자주식회사
IPC: G09G3/36
Abstract: 액정표시장치의 소오스 구동부에서 높은 슬루율을 갖는 출력 버퍼가 개시된다. 본 발명에 따른 소오스 구동부에서 출력버퍼는 입력신호 및 궤환된 출력신호를 차동 입력하여 입력신호와 반전된 특성을 갖는 풀업(다운) 신호와, 입력신호를 차동 증폭한 제1제어신호를 발생하는 차동 증폭부, 소정의 바이어스 전압과 제1제어신호에 응답하여 구동되며, 제1제어신호에 반전된 특성을 갖는 제2제어신호를 생성하는 제어부 및 상기 풀업(다운) 신호와 제2제어신호에 응답하여 공급 전원 레벨로 충전 또는 접지 전원 레벨로 방전되면서 입력신호를 쫓는 출력 신호를 발생하는 출력부를 포함하는 것을 특징으로 하며, 쵸핑방법을 이용하여 출력 버퍼를 구성하더라도 높은 슬루율 특성을 얻을 수 있다.
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公开(公告)号：KR1020050026841A
公开(公告)日：2005-03-16
申请号：KR1020030069730
申请日：2003-10-07
Applicant: 삼성전자주식회사
IPC: G09G3/36
CPC classification number: G09G3/3688 , G09G3/3614 , G09G2310/027
Abstract: A high slew rate amplification circuit for driving a thin film transistor(TFT)-liquid crystal display(LCD) device is provided to improve slew rate characteristics and thus to remove afterimage phenomenon. The high slew rate amplification circuit comprises OP amps(604,606), and a pull-up transistor(612) connected to an output port of the OP amp. A pull-down transistor(610) is connected to the output port of the OP amp. And control circuits(608,616) enable selectively the pull-up transistor and the pull-down transistor respectively. The control circuits activate the pull-up transistor and the pull-down transistor for a shorter time than a half of a polarity signal period.
Abstract translation: 提供用于驱动薄膜晶体管（TFT） - 液晶显示（LCD）装置的高压摆率放大电路，以提高压摆率特性，从而消除残余图像现象。 高压摆率放大电路包括OP放大器（604,606）和连接到OP放大器的输出端口的上拉晶体管（612）。 下拉式晶体管（610）连接到OP放大器的输出端口。 并且控制电路（608,616）分别有选择地启动上拉晶体管和下拉晶体管。 控制电路比极性信号周期的一半更短的时间激活上拉晶体管和下拉晶体管。
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公开(公告)号：KR1020030079227A
公开(公告)日：2003-10-10
申请号：KR1020020018096
申请日：2002-04-02
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: PURPOSE: A susceptor for supporting a semiconductor substrate and a processing apparatus having the same are provided to be capable of preventing process gas from flowing to the rear surface of the semiconductor substrate by using a gas inflow preventing wall. CONSTITUTION: A susceptor(200) for supporting a semiconductor substrate is installed in a chamber, wherein the chamber is used for processing the semiconductor substrate. The susceptor is provided with a circular plate(202) for supporting the semiconductor substrate and a gas inflow preventing wall(204) installed at the upper portion of the circular plate for supporting the edge portion of the semiconductor substrate and preventing process gas from flowing between the semiconductor substrate and the plate.
Abstract translation: 目的：提供一种用于支撑半导体衬底的感受体及具有该感光体的处理设备，以能够通过使用气体流入防止壁来防止工艺气体流向半导体衬底的后表面。 构成：用于支撑半导体衬底的感受器（200）安装在室中，其中室用于处理半导体衬底。 基座设置有用于支撑半导体基板的圆板（202）和安装在圆板上部的气体流入防止壁（204），用于支撑半导体基板的边缘部分，并防止工艺气体在 半导体衬底和板。
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公开(公告)号：KR1020110007529A
公开(公告)日：2011-01-24
申请号：KR1020090065086
申请日：2009-07-16
Applicant: 삼성전자주식회사
CPC classification number: G09G3/3696 , G09G3/3688 , G09G2310/027 , G09G2330/025 , G09G2330/026
Abstract: PURPOSE: A source driver and a display device thereof are provided to prevent damage to a decoder device by generating a plurality of gamma voltages. CONSTITUTION: A power supply part(10) outputs a plurality of reference voltages during a power-up operation. The power supply part uses a stabilized power supply voltage. A gamma voltage output part(30) generates a plurality of gamma voltages by using the power supply voltage. The gamma voltage output part generates the plurality of gamma voltages by using a plurality of reference voltages. A source driver comprises a decoding part(40). The decoding part selects at least one voltage among the plurality of gamma voltages.
Abstract translation: 目的：提供源驱动器及其显示装置，以通过产生多个伽马电压来防止对解码器装置的损坏。 构成：电源部分（10）在上电操作期间输出多个参考电压。 电源部分使用稳定的电源电压。 伽马电压输出部分（30）通过使用电源电压产生多个伽马电压。 γ电压输出部通过使用多个参考电压来生成多个伽马电压。 源驱动器包括解码部分（40）。 解码部选择多个伽马电压中的至少一个电压。
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Patent Agency Ranking
公开(公告)号：KR1020070068747A
公开(公告)日：2007-07-02
申请号：KR1020050130708
申请日：2005-12-27
Applicant: 삼성전자주식회사
IPC: H01L21/3065 , H01L21/304
CPC classification number: H01J37/32862
Abstract: A method of rinsing semiconductor fabricating equipment is provided to remove the byproduct of (NH4)2SiF6 generated when removing a natural oxide layer which is soluble by using water. An etching gas containing ammonia and nitrogen trifluoride is supplied on a wafer(W) with a natural oxide layer(100a). The etching gas is reacted with the natural oxide layer by generating plasma to form a byproduct of ammonium fluorosilicide. The wafer is heated to absorb the byproduct in semiconductor manufacturing equipment, and then the byproduct is removed by using water.
Abstract translation: 提供一种冲洗半导体制造设备的方法，以去除通过使用水去除可溶解的天然氧化物层时产生的（NH 4）2 SiF 6的副产物。 含有氨和三氟化氮的蚀刻气体在具有天然氧化物层（100a）的晶片（W）上提供。 蚀刻气体通过产生等离子体与天然氧化物层反应，形成氟硅酸铵的副产物。 将晶片加热以吸收半导体制造设备中的副产物，然后通过使用水除去副产物。
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公开(公告)号：KR100594232B1
公开(公告)日：2006-06-30
申请号：KR1020030069730
申请日：2003-10-07
Applicant: 삼성전자주식회사
IPC: G09G3/36
CPC classification number: G09G3/3688 , G09G3/3614 , G09G2310/027
Abstract: 박막 트랜지스터-액정 표시 장치 구동을 위한 슬루 레이트가 큰 증폭회로가 개시된다. 상기 증폭회로는 슬루 레이트 특성을 개선한다. 따라서, 액정 표시 장치(LCD)의 소오스 라인 구동을 위하여 출력 버퍼에 사용되는 경우에 부하를 빠른 시간에 충방전시키므로 잔상 효과를 제거할 수 있는 효과가 있다.
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公开(公告)号：KR1020050078269A
公开(公告)日：2005-08-05
申请号：KR1020040005645
申请日：2004-01-29
Applicant: 삼성전자주식회사
Inventor： 박정태
IPC: G09G3/36
CPC classification number: G09G3/3688 , G09G2310/027 , G09G2310/0297 , G09G2340/16
Abstract: 프레임 상쇄 및 하프 디코딩 방법을 채용하는 TFT-LCD 소스 드라이버 및 소스 라인 구동 방법이 개시된다. 본 발명의 TFT-LCD 소스 드라이버는 다수개의 채널들 중 2 채널 마다 소스 라인 구동 전압을 출력한다. 정극성의 제1 및 제2 그레이 스케일 전압을 발생하는 정 하프 디코더와 부극성의 제1 및 제2 그레이 스케일 전압을 발생하는 부 하프 디코더의 출력이 쵸핑 제어 신호에 응답하는 쵸핑 먹스부를 통해 선택적으로 제1 및 제2 출력 버퍼로 전달된다. 제1 및 제2 출력 버퍼의 출력은 극성 제어 신호에 응답하는 극성 먹스부를 통해 제1 및 제2 채널로 출력된다. 이에 따라, 정해진 프레임 동안 2개의 채널로 2 그레이 스케일 차이를 갖는 구동 전압을 반복적으로 출력함으로써, 그 중간에 해당하는 그레이 스케일 전압이 출력되는 것처럼 보이게 한다.
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公开(公告)号：KR1020030003601A
公开(公告)日：2003-01-10
申请号：KR1020010039525
申请日：2001-07-03
Applicant: 삼성전자주식회사
IPC: H01L21/3065
Abstract: PURPOSE: A dry etch apparatus is provided to prevent a floating phenomenon of byproducts in the inside of a process chamber by increasing an absorbing force for absorbing the byproducts in a dry etch process. CONSTITUTION: An electrostatic chuck(104) is installed in the inside of a process chamber(102) in order to grasp a semiconductor substrate(100). A grasping portion is projected to an upper face portion of the electrostatic chuck(104). A gas supply portion(106) is connected with an upper portion of the process chamber(102). An upper electrode(108) is used for supplying RF power. A lower electrode is formed in the inside of the electrostatic chuck(104). A driving portion(110) is connected with a lower portion of the electrostatic chuck(104) in order to drive the electrostatic chuck(104) to an upper or a lower direction. A baffle plate(112) is installed at a side of the electrostatic chuck(104). A door(114) is installed at one side of the lower portion of the process chamber(104). A vacuum pump(116) and a valve(118) are connected with the other side of the lower portion of the process chamber(104). A shadow ring(120) is installed on an upper portion of the electrostatic chuck(104).
Abstract translation: 目的：提供干蚀刻设备，以通过增加用于在干法蚀刻工艺中吸收副产物的吸收力来防止处理室内部副产物的漂浮现象。 构成：为了抓住半导体衬底（100），静电吸盘（104）安装在处理室（102）的内部。 把持部分突出到静电吸盘（104）的上表面部分。 气体供给部（106）与处理室（102）的上部连接。 上电极（108）用于提供RF功率。 在静电吸盘（104）的内部形成下电极。 驱动部分（110）与静电吸盘（104）的下部连接，以将静电吸盘（104）驱动到上或下方向。 挡板（112）安装在静电吸盘（104）的一侧。 门（114）安装在处理室（104）的下部的一侧。 真空泵（116）和阀（118）与处理室（104）的下部的另一侧连接。 阴影环（120）安装在静电卡盘（104）的上部。
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公开(公告)号：KR1020010068847A
公开(公告)日：2001-07-23
申请号：KR1020000000966
申请日：2000-01-10
Applicant: 삼성전자주식회사
IPC: H01L21/3065
Abstract: PURPOSE: A dry etching apparatus including a focus ring surrounding a chuck is provided to prevent generation of a particle on a wafer by preventing reaction by products from being accumulated between a focus ring and the wafer. CONSTITUTION: A wafer(100) is installed on a chuck(200). A focus ring(400) surrounds an outer peripheral surface of the chuck(200). The chuck(200) uses an electrostatic force. The focus ring(400) is attached on a lateral part of the chuck(200) by a support part(300). There is generated a step difference on edge portions of the chuck(200). A part of the focus ring(400) is coupled with the step difference portions. A surface on which the focus ring(400) is seated has the same altitude as the chuck(200). The surface on which the focus ring(400) is seated is formed to be adjacent to the outer peripheral surface of the chuck(200). For the purpose of compensating an etched amount of edge portions of the wafer(100) which is seated on the surface(410), the focus ring(400) is formed of a material similar to that of the wafer(100). For example, the focus ring (400) is formed of silicone.
Abstract translation: 目的：提供一种包括卡盘周围的聚焦环的干式蚀刻装置，以防止由聚焦环和晶片之间的积聚产生的反应产生晶片上的颗粒。 构成：将晶片（100）安装在卡盘（200）上。 聚焦环（400）围绕卡盘（200）的外周表面。 卡盘（200）使用静电力。 聚焦环（400）通过支撑部（300）附接在卡盘（200）的侧面部分上。 在卡盘（200）的边缘部分产生台阶差。 聚焦环（400）的一部分与台阶差部分相结合。 聚焦环（400）所在的表面与卡盘（200）具有相同的高度。 聚焦环（400）所在的表面形成为与卡盘（200）的外周表面相邻。 为了补偿位于表面（410）上的晶片（100）的边缘部分的蚀刻量的目的，聚焦环（400）由与晶片（100）类似的材料形成。 例如，聚焦环（400）由硅树脂形成。
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