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公开(公告)号：KR100603931B1
公开(公告)日：2006-07-24
申请号：KR1020050006835
申请日：2005-01-25
Applicant: 삼성전자주식회사
IPC: H01L21/336
Abstract: 여기에는 반도체 소자 제조방법이 개시된다. 이 반도체 소자 제조방법에 의하면 기판 상에 마스크막을 형성한 후 게이트 트랜치를 형성하고, 상기 게이트 트랜치를 도전 물질로 채워 게이트 전극을 형성한 다음 상기 마스크막을 제거한다. 따라서 게이트 전극과 기판 사이의 오정렬을 방지할 수 있다. 또한 상기 게이트 전극을 도핑되지 않은 폴리실리콘층으로 형성한 후 이온 주입 공정에서 불순물 주입으로 원하는 게이트 전극의 형태를 결정하여, 원하는 형태의 반도체 소자를 용이하게 얻을 수 있다.
Abstract translation: 公开了一种制造半导体器件的方法。 根据该半导体器件的制造方法，在基板上形成掩模膜，然后形成栅极沟槽，在栅极沟槽内填充导电材料形成栅极电极，然后去除掩模膜。 因此，可以防止栅电极和衬底之间的错位。 另外，在将栅电极形成为非掺杂多晶硅层之后，通过离子注入工艺中的杂质注入来确定期望的栅电极的形状，从而可以容易地获得期望类型的半导体器件。
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公开(公告)号：KR100428791B1
公开(公告)日：2004-04-28
申请号：KR1020020020887
申请日：2002-04-17
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: H01L21/76807 , H01L21/02112 , H01L21/02118 , H01L21/02164 , H01L21/31116 , H01L21/312 , H01L21/3121 , H01L21/3127 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
Abstract: Fabrication of dual damascene interconnection includes forming lower insulating layer, upper etch-stop layer, upper insulating layer, and hard mask layer on substrate; patterning hard mask layer and upper insulating layer to form a groove; forming spacer on sidewall of groove; forming photoresist pattern; etching upper etch-stop layer and lower insulating layer; removing patterned hard mask layer and spacer; and forming an interconnection. Fabrication of dual damascene interconnection includes sequentially forming lower insulating layer (310), upper etch-stop layer (315), upper insulating layer (320), and hard mask (325) layer on a semiconductor substrate where a lower conductive layer is formed; patterning the hard mask layer and upper insulating layer to form an interconnection groove exposing a portion of upper etch-stop layer; forming a spacer on sidewall of interconnection groove; forming a photoresist pattern having an opening that exposes the interconnection groove and the portion of upper etch-stop layer; successively etching the upper etch-stop layer and lower insulating layer to form a hole exposing a portion of lower conductive layer; removing the patterned hard mask layer and spacer; and forming an interconnection to fill the interconnection groove and the hole.
Abstract translation: 双镶嵌互连的制造包括在衬底上形成下绝缘层，上蚀刻停止层，上绝缘层和硬掩模层; 图案化硬掩模层和上绝缘层以形成沟槽; 在沟槽的侧壁上形成间隔物; 形成光刻胶图案; 蚀刻上部蚀刻停止层和下部绝缘层; 去除图案化的硬掩模层和间隔物; 并形成互连。 双镶嵌互连的制造包括在形成下导电层的半导体衬底上顺序地形成下绝缘层（310），上蚀刻停止层（315），上绝缘层（320）和硬掩模（325） 图案化所述硬掩模层和所述上绝缘层以形成暴露所述上蚀刻停止层的一部分的互连凹槽; 在互连槽的侧壁上形成间隔件; 形成具有开口的光致抗蚀剂图案，所述开口暴露所述互连槽和所述上部蚀刻停止层的所述部分; 依次蚀刻上部蚀刻停止层和下部绝缘层以形成暴露下部导电层的一部分的孔; 去除图案化的硬掩模层和间隔物; 并形成互连以填充互连槽和孔。
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公开(公告)号：KR1020030049000A
公开(公告)日：2003-06-25
申请号：KR1020010079065
申请日：2001-12-13
Applicant: 삼성전자주식회사
IPC: H01L27/04
Abstract: PURPOSE: A semiconductor device with a metal-insulator-metal(MIM) capacitor is provided to prevent diffusion of copper by making the first plug composed of a copper metal layer not contact a dielectric layer composed of an oxide layer because of a capacitor upper electrode, and to improve a leakage characteristic by making a capacitor lower electrode not composed of copper metal whose surface is rough. CONSTITUTION: The first interlayer dielectric(101) is formed on a semiconductor substrate. The first trench(105) is formed in the first interlayer dielectric. The second trench(109) shallower than the first trench is formed at both sides of the first trench in the first interlayer dielectric. The capacitor lower electrode(111a) is formed on the bottom and the both sidewalls of the first trench so as to be filled in the second trench. The dielectric layer(113a) is formed on the capacitor lower electrode. The capacitor upper electrode(115a) is formed near the surface of the first trench on the dielectric layer. The second interlayer dielectric has a via hole that opens the capacitor lower electrode and the capacitor upper electrode. A plug is buried in the via hole.
Abstract translation: 目的：提供一种具有金属 - 绝缘体 - 金属（MIM）电容器的半导体器件，以防止由于电容器上电极而使由铜金属层组成的第一插塞不接触由氧化物层构成的电介质层而扩散铜 并且通过使不由表面粗糙的铜金属构成的电容器下电极来改善泄漏特性。 构成：第一层间电介质（101）形成在半导体衬底上。 第一沟槽（105）形成在第一层间电介质中。 在第一层间电介质中的第一沟槽的两侧形成比第一沟槽浅的第二沟槽（109）。 电容器下电极（111a）形成在第一沟槽的底部和两个侧壁上，以便填充在第二沟槽中。 介电层（113a）形成在电容器下电极上。 电容器上电极（115a）形成在电介质层上的第一沟槽的表面附近。 第二层间电介质具有开通电容器下电极和电容器上电极的通孔。 插头埋在通孔中。
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公开(公告)号：KR100354069B1
公开(公告)日：2002-09-27
申请号：KR1020000001671
申请日：2000-01-14
Applicant: 삼성전자주식회사
IPC: F24C7/08
Abstract: 센서에 의해 검출되는 조리물의 조리상태를 데이터화하기 위한 전자렌지의 데이터 획득방법이 개시된다. 개시된 본 발명의 데이터 획득방법은, 소정 시간동안 조리물로부터의 데이터를 검출하는 단계와, 상기 검출된 데이터의 합을 산출하는 단계와, 상기 데이터의 합에서 기 저장된 전자렌지의 자체 특성값을 배제하는 단계를 포함하여 이루어지는 것을 특징으로 한다. 이에 의하면, 조리물이 안치된 턴테이블의 회전주기에 따라 조리물로부터 검출되는 주기적인 검출테이터에 대한 평균치를 산출하여 조리물의 종류와 물성변화를 판정하고, 또 마그네트론의 파워출력 특성과 조리실내의 자체적인 에너지 흡수특성을 고려하여 순수한 조리물만의 특성테이터를 얻을 수 있기 때문에, 다양한 조리물의 특성과 그 조리상태를 정확하게 파악할 수 있어, 최적의 조리를 수행할 수 있다.
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公开(公告)号：KR100341332B1
公开(公告)日：2002-06-22
申请号：KR1020000003120
申请日：2000-01-22
Applicant: 삼성전자주식회사
IPC: F24C7/08
Abstract: 전자렌지의 팝콘조리 제어방법이 개시된다. 개시된 바와 같이 본 발명의 팝콘조리 제어방법은, 소정 주기마다 센서로부터 검출되는 데이터를 수집하는 단계와, 상기 검출데이터가 각 주기마다 소정 크기 이상으로 변화되는 횟수를 카운트한 결과에 따라 마그네트론의 구동 종료시점을 판정하는 단계를 포함하여 이루어지는 것을 특징으로 한다.
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Patent Agency Ranking
公开(公告)号：KR1020000008033A
公开(公告)日：2000-02-07
申请号：KR1019980027679
申请日：1998-07-09
Applicant: 삼성전자주식회사
Inventor： 박태수
IPC: F24C7/02
Abstract: PURPOSE: A cooking chamber of a microwave oven is provided to shorten the cooking time by rapidly circulating heat inside of a cooking chamber and to equally cooking food by extending the contact area of heat with food. CONSTITUTION: A cooking chamber of a microwave oven has:a cooking chamber(33) provided inside of a case(31) to cook food by heating it; a wave guide(35) placed on the right upper area of the cooking chamber to guide high frequency; a magnetron(37) installed on the end part of the wave guide to generate high frequency; a cooling fan(39) installed on the inner upper area of the case to cool the magnetron; a turn table(41) provided to equally boil food; and a cooking stand(43) placed on the upper area of the turn table to accept food desired to be cooked.
Abstract translation: 目的：提供微波炉的烹饪室，以通过快速循环烹饪室内的热量来缩短烹饪时间，并通过延长食物的接触面积来平均烹饪食物。 构成：微波炉的烹饪室具有：设置在壳体内部的烹饪室（33），通过加热烹饪食物; 放置在烹饪室右上方的波导（35）引导高频; 安装在波导端部的磁控管（37）产生高频; 安装在壳体的上部上部以冷却磁控管的冷却风扇（39）; 设置为平均煮沸食物的转台（41）; 以及放置在转台上部区域上的烹饪台（43），以接收所需烹饪食物。
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公开(公告)号：KR2019980025461U
公开(公告)日：1998-08-05
申请号：KR2019960038256
申请日：1996-11-04
Applicant: 삼성전자주식회사
IPC: A61L2/12
CPC classification number: A61L2/12 , A61L2/07 , A61L2202/23
Abstract: 본고안은전자렌지를이용한젖병소독장치에관한것으로서, 조리실(3)의내측에물이수용된젖병(33)을안착시켜가열소독할때에상기물이끓어넘치는것을방지하도록상기젖병(33)의내측에지속적으로기포를발생시키는기포발생수단(100)이구비된것을특징으로하며, 젖병(33)의내측에지속적으로기포를발생시키는기포발생수단(100)을충진시킴에따라고주파에의해젖병(33) 소독시에상기젖병(33)의내측에수용된물이갑자기끓어넘치는현상을효과적으로방지할수 있다.
Abstract translation: 作为使用微波的瓶子杀菌装置中，当通过安装在瓶33上的加热杀菌，容纳在烹饪室（3）的瓶（33）内的内部的水的内纸，以防止溢出的水烧开 根据锡金通过高频连续地供给瓶子的两个气泡生成装置，用于产生气泡以非特征在于，填充的连续气泡产生装置100 100在瓶33的内部产生气泡（33 ），包含在灭菌过程中瓶33内可突然有效地烧开水防止全面发展。
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公开(公告)号：KR1020030082238A
公开(公告)日：2003-10-22
申请号：KR1020020020887
申请日：2002-04-17
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: H01L21/76807 , H01L21/02112 , H01L21/02118 , H01L21/02164 , H01L21/31116 , H01L21/312 , H01L21/3121 , H01L21/3127 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A method for fabricating a dual damascene interconnection using a low dielectric layer is provided to simplify a fabricating process and prevent ashing damage to an insulation layer made of organic polymer by using only one hard mask layer. CONSTITUTION: A lower insulation layer, an upper etch stop layer and a hard mask layer(325) are sequentially formed on a semiconductor substrate having a lower conductive layer. The hard mask layer and the upper insulation layer are patterned to form an interconnection groove in the hard mask layer and the upper insulation layer such that the interconnection groove exposes a predetermined region of the upper etch stop layer. A spacer(340) is formed on the sidewall of the interconnection groove. A photoresist layer pattern(345) having an opening(347) crossing the interconnection groove is formed on the semiconductor substrate having the spacer. The upper etch stop layer and the lower interconnection that are exposed by the opening are sequentially etched to form a hole in the lower insulation layer such that the hole exposes a predetermined region of the lower conductive layer. The patterned hard mask layer and the spacer are removed. An interconnection fills the interconnection groove and the inside of the hole.
Abstract translation: 目的：提供一种使用低介电层制造双镶嵌互连的方法，以简化制造工艺，并通过仅使用一个硬掩模层防止由有机聚合物制成的绝缘层的灰化损伤。 构成：在具有下导电层的半导体衬底上依次形成下绝缘层，上蚀刻停止层和硬掩模层（325）。 将硬掩模层和上绝缘层图案化以在硬掩模层和上绝缘层中形成互连槽，使得互连槽暴露上蚀刻停止层的预定区域。 间隔物（340）形成在互连槽的侧壁上。 在具有间隔物的半导体衬底上形成具有与互连槽相交的开口（347）的光致抗蚀剂图案（345）。 依次蚀刻由开口暴露的上蚀刻停止层和下互连，以在下绝缘层中形成孔，使得孔暴露下导电层的预定区域。 去除图案化的硬掩模层和间隔物。 互连填充互连槽和孔的内部。
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公开(公告)号：KR100389005B1
公开(公告)日：2003-06-25
申请号：KR1020000000019
申请日：2000-01-03
Applicant: 삼성전자주식회사
IPC: F24C7/02
CPC classification number: H05B6/705 , H05B6/707 , H05B6/76 , Y02B40/146
Abstract: A microwave oven has a standing wave magnetic field detecting device. The device oven includes a sensor (500; 556; 600; 700; 800) having a loop portion which is protrudes into a waveguide (10) of the microwave oven. One end of the loop is grounded to the outside face of a wall of the waveguide (10).
Abstract translation: 微波炉具有驻波磁场检测装置。 装置炉包括具有突出到微波炉的波导（10）中的环部分的传感器（500; 556; 600; 700; 800）。 环路的一端接地到波导管壁（10）的外表面。 ＆lt;图像＆GT;
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公开(公告)号：KR100259152B1
公开(公告)日：2000-06-15
申请号：KR1019980010145
申请日：1998-03-24
Applicant: 삼성전자주식회사
IPC: F24C7/08
Abstract: PURPOSE: A device for automatically detecting load of a microwave oven is provided to automatically cook foods in a proper condition by detecting load changed according to an amount of foods. CONSTITUTION: A device for automatically detecting load of a microwave oven includes a load detecting part(31) for detecting a plurality of prescribed voltages through voltage and current induced to a second coil of a high-pressure transducer and a micom(32) receiving a predetermined voltage detected from the load detecting part for determining an amount of load inserted into a cooking chamber. The load detecting part has a high-pressure condenser connected to an end of the second coil of the high-pressure transducer and a resistance connected to the other end, and a pair of resistances and a high-pressure diode connected in parallel to the high-pressure condenser.
Abstract translation: 目的：提供一种用于自动检测微波炉负荷的装置，通过检测根据食物量变化的负荷，自动烹饪食物。 构成：用于自动检测微波炉的负载的装置包括：负载检测部（31），用于通过感应到高压换能器的第二线圈的电压和电流来检测多个规定电压;以及微机（32），其接收 从负载检测部检测到的用于确定插入到烹饪室中的负载量的预定电压。 负载检测部具有与高压换能器的第二线圈的端部连接的高压电容器和与另一端连接的电阻，以及与高电平连接的一对电阻和高压二极管 压力冷凝器。
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