公开(公告)号：KR1020070069605A

公开(公告)日：2007-07-03

申请号：KR1020050131922

申请日：2005-12-28

Applicant: 삼성전자주식회사

Inventor： 박평선 ,  김정수 ,  김봉수 ,  김영남

IPC: H01L21/67

CPC classification number: H01L22/12 ,  G01N21/8851 ,  G01N2021/8874

Abstract: A method for detecting defects on a semiconductor wafer is provided to accurately measure the size of a defect depending upon a type of the defect by classifying the defect into particle defect and pit defect. Defects existing on a surface of a wafer are classified, and then a curve representing a size of each defect is prepared. The size of each defect is measured by using the curve. The curve comprises a calibration curve prepared by using a laser scattering volume reflected from the defect. The defect comprises a falling defect dropped from the surface of the wafer and a defect dug on the surface.

Abstract translation: 提供了一种用于检测半导体晶片上的缺陷的方法，以通过将缺陷分类为颗粒缺陷和凹坑缺陷来精确地测量取决于缺陷类型的缺陷尺寸。 将存在于晶片表面上的缺陷分类，然后准备表示每个缺陷的尺寸的曲线。 通过使用曲线测量每个缺陷的尺寸。 该曲线包括通过使用从缺陷反射的激光散射体积制备的校准曲线。 该缺陷包括从晶片表面掉落的下落缺陷和在表面上挖出的缺陷。

公开(公告)号：KR1020050012616A

公开(公告)日：2005-02-02

申请号：KR1020030051750

申请日：2003-07-26

Applicant: 삼성전자주식회사

Inventor： 박평선 ,  고영민 ,  강호성

IPC: H01L21/66

Abstract: PURPOSE: An inspection method for semiconductor device is provided to reduce stress applied to a photoresist by measuring automatically an alternate area adjacent to an original measurement area. CONSTITUTION: A measuring position of a semiconductor substrate that a same-shaped unit pattern is repeatedly formed thereon is decided(S105). A first measuring position is detected and measured(S110). If the first measuring position is not detected or measured(S115), a first adjacent area adjacent to the first measuring position is detected(S120). The first adjacent area is measured(S125). A second measuring position is detected and measured(S130). If the second measuring position is not detected or measured(135), a second adjacent area adjacent to the second measuring position is detected(S140). The second adjacent area is measured(S145).

Abstract translation: 目的：提供半导体器件的检查方法，以通过自动测量与原始测量区域相邻的交替区域来减少施加到光致抗蚀剂上的应力。 结构：决定在其上重复形成相同形状的单位图形的半导体衬底的测量位置（S105）。 检测并测量第一测量位置（S110）。 如果未检测或测量第一测量位置（S115），则检测与第一测量位置相邻的第一相邻区域（S120）。 测量第一相邻区域（S125）。 检测并测量第二测量位置（S130）。 如果未检测或测量第二测量位置（135），则检测与第二测量位置相邻的第二相邻区域（S140）。 测量第二相邻区域（S145）。

公开(公告)号：KR1020040072780A

公开(公告)日：2004-08-19

申请号：KR1020030008408

申请日：2003-02-11

Applicant: 삼성전자주식회사

Inventor： 박평선 ,  고영민

IPC: H01L21/66

Abstract: PURPOSE: A method for measuring thickness of a thin film is provided to set up a reference value and measure the thickness by using an X-ray reflectometry and an X-ray fluorescence spectroscopy. CONSTITUTION: X-rays are irradiated on a surface of a reference wafer including a reference thin film(S100). The thickness of the reference thin film is measured by using the X-rays reflected from the reference wafer(S200). A reference value is set up by using the measured thickness of the reference thin film(S300). The X-rays are irradiated on the surface of a target wafer including a thin film as a measuring target(S400). The intensity of fluorescent X-rays generated from the target wafer is measured(S500). The thickness of the target thin film is measured by comparing the measured intensity with the reference value(S600).

Abstract translation: 目的：提供一种测量薄膜厚度的方法，以通过X射线反射计和X射线荧光光谱法建立参考值并测量厚度。 构成：将X射线照射在包括参考薄膜的参考晶片的表面上（S100）。 通过使用从参考晶片反射的X射线来测量参考薄膜的厚度（S200）。 通过使用测量的参考薄膜的厚度来建立参考值（S300）。 将X射线照射在包含作为测定对象物的薄膜的目标晶片的表面上（S400）。 测量从目标晶片产生的荧光X射线的强度（S500）。 通过将测量的强度与参考值进行比较来测量目标薄膜的厚度（S600）。