公开(公告)号：KR1020120040761A

公开(公告)日：2012-04-30

申请号：KR1020100083066

申请日：2010-08-26

Applicant: 삼성전자주식회사

Inventor： 성충기 ,  김광복 ,  김경현 ,  신재진 ,  손현호

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/32137 ,  H01L21/02068 ,  H01L21/28273 ,  H01L21/31116 ,  H01L27/11521 ,  H01L21/76205

Abstract: PURPOSE: A method for manufacturing a non-volatile memory device is provided to reduce the interference between adjacent memory cells in one string by obtaining a separation distance between the adjacent cells. CONSTITUTION: Provided is a substrate forming a charge storage layer(150). The charge storage layer is electrically separated with an element isolation film(130). The element isolation film is recessed to make a top part of the element isolation film lower than the top part of the charge storage layer. Both sides of the charge storage layer exposed by the element isolation film is dried and washed by using a cleaning agent. The cleaning agent includes a NF3 gas.

Abstract translation: 目的：提供一种用于制造非易失性存储器件的方法，通过获得相邻单元之间的间隔距离来减小一个串中的相邻存储单元之间的干扰。 构成：提供形成电荷存储层（150）的基板。 电荷存储层与元件隔离膜（130）电隔离。 元件隔离膜凹入以使元件隔离膜的顶部低于电荷存储层的顶部。 通过元件隔离膜暴露的电荷存储层的两侧被干燥并使用清洁剂洗涤。 清洁剂包括NF 3气体。

公开(公告)号：KR1020150088941A

公开(公告)日：2015-08-04

申请号：KR1020140008916

申请日：2014-01-24

Applicant: 삼성전자주식회사

Inventor： 엄대홍 ,  김경현 ,  손현호

IPC: H01L21/302 ,  H01L21/677

CPC classification number: H01L21/67781 ,  H01L21/67778

Abstract: 본실시형태에따른습식세정장치는, 반도체웨이퍼를탑재하는풉(FOUP) 및더미웨이퍼를탑재하는스토커(stocker)가로딩및 언로딩되는로드유닛; 로딩된상기풉에서상기반도체웨이퍼를꺼내어웨이퍼가이드에탑재하거나상기웨이퍼가이드에서상기풉으로재탑재하는웨이퍼이송로봇; 로딩된상기스토커에서상기더미웨이퍼를꺼내어상기웨이퍼가이드의상기반도체웨이퍼가탑재되지않은빈 슬롯에탑재하거나상기웨이퍼가이드에서상기스토커로재탑재하는더미이송로봇; 및상기반도체웨이퍼와더미웨이퍼가채워진상기웨이퍼가이드를공급받아상기반도체웨이퍼에대한세정공정을수행하는공정챔버를포함할수 있다.

Abstract translation: 根据本发明的实施例的湿式清洁装置可以包括：装载和卸载用于装载伪晶片的储料器的负载单元和用于加载半导体晶片的前开口统一容器（FOUP）; 晶片传送机器人，其通过从加载的FOUP拾取半导体晶片或从晶片引导件重新加载FOUP将半导体晶片装载在晶片引导件上; 从装载的缠绕器拾取虚设晶片的虚拟传送机器人将其装载到未装载晶片引导件的半导体晶片的空槽中，或者重新加载晶片引导件上的缠绕器; 以及处理室，其接收填充有半导体晶片和虚设晶片的晶片引导件，并对半导体晶片执行清洁处理。

公开(公告)号：KR1020080088246A

公开(公告)日：2008-10-02

申请号：KR1020070030949

申请日：2007-03-29

Applicant: 삼성전자주식회사

Inventor： 배진혜 ,  이금주 ,  손현호 ,  황인석

IPC: H01L21/304

Abstract: A method for cleaning a semiconductor substrate is provided to enhance a yield and reliability in a manufacturing process by removing fully impurities without causing damage of a metal layer pattern. An impurity removal process is performed to remove residues of a first impurity on a semiconductor substrate including a metal layer pattern by using an organic or inorganic strip solution(S10). A removal process is performed to remove the residual organic or inorganic strip solution and residues of a second impurity on the semiconductor substrate by using a cleaning solution including nitrogen(S11). Megasonic energy is applied to the cleaning solution including the nitrogen. The cleaning solution is deionized water having density of nitrogen gas of 10 ppm to 20 ppm.

Abstract translation: 提供了一种用于清洁半导体衬底的方法，以通过完全去除杂质而不造成金属层图案的损坏来提高制造工艺中的成品率和可靠性。 通过使用有机或无机条状溶液，进行杂质去除处理以除去包括金属层图案的半导体衬底上的第一杂质残留物（S10）。 通过使用包含氮的清洗溶液，去除残留的有机或无机条状溶液和半导体衬底上的第二杂质的残留物（S11）。 将超声波能量施加到包括氮气的清洁溶液中。 清洗液是氮浓度为10ppm〜20ppm的去离子水。