公开(公告)号：KR100655788B1

公开(公告)日：2006-12-08

申请号：KR1020050057487

申请日：2005-06-30

Applicant: 삼성전자주식회사

Inventor： 이금주 ,  배진혜 ,  황인석

IPC: H01L21/304

Abstract: A method for cleaning a semiconductor device is provided to prevent generation of organic polymer formed on the surface of a lower electrode caused by a residual organic compound by cleaning the organic compound while using an ozone aqueous solution. An oxide layer having an opening is formed. A conductive layer pattern(120) is formed in the opening. The oxide layer is removed by using a metal corrosion avoiding agent, surfactant or a LAL(limulus amebocyte lysate) solution including a mixture of the metal corrosion avoiding agent and the surfactant such that the LAL solution includes an organic compound, hydrogen fluoride ammonium, fluoride hydrogen acid and water. In removing the oxide layer by using the LAL solution, the organic compound absorbed to the surface of the conductive layer pattern is eliminated by using an ozone aqueous solution including ozone of 5~100 ppm and hydrofluoric acid of 0.001~0.02 weight percent. The process for removing the oxide layer and the process for removing the organic compound remaining on the conductive pattern are performed by an in-situ method.

Abstract translation: 提供了一种用于清洁半导体器件的方法，以通过在使用臭氧水溶液的同时清洁有机化合物来防止由残余有机化合物引起的在下电极的表面上形成的有机聚合物的产生。 形成具有开口的氧化物层。 导电层图案（120）形成在开口中。 通过使用包括金属防腐蚀剂和表面活性剂的混合物的金属防锈剂，表面活性剂或LAL（lim a阿米巴细胞裂解物）溶液来去除氧化物层，使得LAL溶液包含有机化合物，氟化氢铵，氟化物 氢酸和水。 在通过使用LAL溶液除去氧化物层时，通过使用包含5〜100ppm的臭氧和0.001〜0.02重量％的氢氟酸的臭氧水溶液来消除吸收到导电层图案表面的有机化合物。 去除氧化物层的工艺和除去留在导电图案上的有机化合物的工艺通过原位方法进行。

公开(公告)号：KR1020170060678A

公开(公告)日：2017-06-02

申请号：KR1020150165120

申请日：2015-11-25

Applicant: 삼성전자주식회사 ,  삼영순화주식회사

Inventor： 김호영 ,  배진혜 ,  한훈 ,  이원준 ,  이창규 ,  백근주 ,  전중익

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: 자성패턴세정조성물은글리콜에테르계열의유기용매, 지방족아민을포함하는분해제, 및유기알칼리계열화합물을포함하는세정촉진제및 킬레이트제중 적어도하나를포함하며, 수계성분이결여된다.

Abstract translation: 磁性图案清洗组合物包括洗涤包含含有有机溶剂，二醇醚类释放的脂族胺，以及有机碱性化合物的启动子序列和螯合剂的分钟中的至少一个，基于水的成分缺乏。

公开(公告)号：KR1020070002233A

公开(公告)日：2007-01-05

申请号：KR1020050057649

申请日：2005-06-30

Applicant: 삼성전자주식회사

Inventor： 배진혜 ,  황인석 ,  정대혁 ,  이금주

IPC: H01L21/302

CPC classification number: G03F7/42 ,  H01L21/67034 ,  H01L21/6704

Abstract: An apparatus for manufacturing a semiconductor is provided to reduce generation of a water spot defect by performing a dry process in a state of keeping a wafer inclined. A process chamber(100) supports a wafer(10) where a photoresist is formed. Vaporized ozone is provided to the process chamber to remove the photoresist. The process chamber changes the photoresist into a water-soluble material by the vaporized ozone. A conveyer(110) conveys the wafer from the process chamber. A drying unit(120) makes the wafer conveyed by the conveyer have a tilt of 20 to 40 degrees. The drying unit removes the water-soluble material from the wafer. The drying unit repeatedly cleans and dries the wafer.

Abstract translation: 提供半导体制造装置，通过在保持晶片倾斜的状态下进行干法处理，减少水斑缺陷的产生。 处理室（100）支撑形成光致抗蚀剂的晶片（10）。 将蒸发的臭氧提供到处理室以除去光致抗蚀剂。 处理室通过蒸发的臭氧将光致抗蚀剂改变成水溶性材料。 输送机（110）从处理室传送晶片。 干燥单元（120）使得由输送机输送的晶片具有20至40度的倾斜度。 干燥装置从晶片上去除水溶性物质。 干燥单元反复清洁并干燥晶片。

公开(公告)号：KR1020150074487A

公开(公告)日：2015-07-02

申请号：KR1020130162314

申请日：2013-12-24

Applicant: 삼성전자주식회사

Inventor： 배진혜 ,  이원준 ,  정성윤 ,  정택동

IPC: H01L21/66 ,  G11C11/15

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10

Abstract: 식각부산물검출방법에있어서, 기판상에팔라듐(Pd)을포함하는자성막을형성한다. 상기자성막을식각하여자성막패턴을형성한다. 브롬화알킬화합물을포함하는혼합물을자성막패턴표면에접촉시킨다. 기판및 혼합물사이의전류변화를측정하여, 자성막패턴표면에형성된식각부산물을검출한다.

Abstract translation: 在用于检测蚀刻副产物的方法中，在衬底上形成具有Pd的磁性层。 通过蚀刻磁性层形成磁性层图案。 包括烷基溴化物的混合物与磁性层图案的表面接触。 通过测量衬底和混合物之间的电流变化来检测形成在磁性层图案的表面上的蚀刻副产物。

公开(公告)号：KR1020080076024A

公开(公告)日：2008-08-20

申请号：KR1020070015404

申请日：2007-02-14

Applicant: 삼성전자주식회사

Inventor： 배성진 ,  정대혁 ,  이금주 ,  곽병용 ,  배진혜 ,  이진이

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/76838

Abstract: A method of manufacturing a non-volatile memory device is provided to prevent voids from being formed between a control gate and a dielectric film by chemically cleaning the dielectric film using an APM(Ammonia and Peroxide Mixture) solution or a chemical solution containing ozone and fluoric acid. A device isolation pattern for defining an active area is formed on a substrate(100). A tunnel insulation film is formed on the active area. A floating gate(120) having an upper surface higher than the device isolation pattern is formed on the active area. Dielectric layers(124) are successively formed along a profile of the device isolation pattern and the floating gate. A surface of the dielectric layer is chemically cleansed. A control gate is formed on the dielectric layer. The dielectric layer has an ONO(Oxide-Nitride-Oxide) stack structure.

Abstract translation: 提供一种制造非易失性存储器件的方法，以通过使用APM（氨和过氧化物混合物）溶液或含有臭氧和氟化物的化学溶液化学清洁电介质膜来防止在控制栅极和电介质膜之间形成空隙 酸。 在衬底（100）上形成用于限定有源区的器件隔离图案。 在有源区域上形成隧道绝缘膜。 在有源区域上形成具有高于器件隔离图案的上表面的浮动栅极（120）。 电介质层（124）沿着器件隔离图案和浮动栅极的轮廓依次形成。 介电层的表面被化学清洗。 在电介质层上形成控制栅极。 介电层具有ONO（氧化氮 - 氮化物 - 氧化物）堆叠结构。

公开(公告)号：KR100829597B1

公开(公告)日：2008-05-14

申请号：KR1020060110900

申请日：2006-11-10

Applicant: 삼성전자주식회사

Inventor： 이금주 ,  배진혜 ,  강대근

IPC: H01L21/304

CPC classification number: C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  H01L21/02071 ,  H01L21/28061 ,  H01L21/28247 ,  H01L29/6656

Abstract: A method for cleaning and manufacturing a semiconductor device are provided to obtain an ideal profile of a structure pattern by completely removing particles from the structure pattern of the semiconductor device. Particles, which are attached to a gate pattern, are removed without consuming a gate pattern containing a metal by using a first cleaning solution containing O3 water(S210). Remained particles are removed by using a second cleaning solution containing NH4OH, H2O2, and DI(Deionized) water(S220). The metal is tungsten silicide. An ozone concentration of the O3 water lies between 10 and 100 ppm. The removing process using the second cleaning solution is performed at a temperature between 0 and 50 °C. The second cleaning water contains HF.

Abstract translation: 提供了一种用于清洁和制造半导体器件的方法，以通过从半导体器件的结构图案中完全去除颗粒来获得结构图案的理想轮廓。 通过使用含有O 3水的第一清洗溶液（S210），除去连接到栅极图案的颗粒，而不消耗含有金属的栅极图案。 通过使用含有NH 4 OH，H 2 O 2和DI（去离子水）的第二清洗溶液除去剩余的颗粒（S220）。 金属是硅化钨。 O 3水的臭氧浓度在10ppm和100ppm之间。 使用第二清洗溶液的去除方法在0至50℃的温度下进行。 第二清洗水含有HF。

公开(公告)号：KR102054819B1

公开(公告)日：2019-12-11

申请号：KR1020130057814

申请日：2013-05-22

Applicant: 삼성전자주식회사

Inventor： 정성윤 ,  배진혜 ,  권형준 ,  박종철 ,  이원준

IPC: H01L21/8242 ,  H01L27/108

公开(公告)号：KR1020130063807A

公开(公告)日：2013-06-17

申请号：KR1020110130376

申请日：2011-12-07

Applicant: 삼성전자주식회사

Inventor： 한재종 ,  권성운 ,  배진혜 ,  이공수 ,  정성훈 ,  강윤구 ,  안호균

IPC: H01L27/10

CPC classification number: H01L45/1233 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/141

Abstract: PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form semiconductor patterns having fine and uniform widths in the opening part of a mold having a fine width. CONSTITUTION: A lower line(105) is formed in a y-axis direction on a semiconductor substrate(100). An upper line(190) is formed in an x-axis direction vertical to the lower line. A selection element is arranged in the crossing region of the upper line and the lower line. A memory element(180) is arranged between the selection element and the upper line. The selection element includes a semiconductor pattern(160) having a first and a second sidewall.

Abstract translation: 目的：提供一种半导体器件及其制造方法，以在具有微细宽度的模具的开口部分中形成具有精细且均匀宽度的半导体图案。 构成：在半导体衬底（100）上沿y轴方向形成下线（105）。 在垂直于下线的x轴方向上形成上线（190）。 选择元件布置在上线和下线的交叉区域中。 存储元件（180）布置在选择元件和上线之间。 选择元件包括具有第一和第二侧壁的半导体图案（160）。

公开(公告)号：KR1020100082170A

公开(公告)日：2010-07-16

申请号：KR1020090001529

申请日：2009-01-08

Applicant: 삼성전자주식회사

Inventor： 이몽섭 ,  황인석 ,  이금주 ,  배진혜 ,  최보우 ,  이승재

IPC: H01L21/3105 ,  H01L21/762

CPC classification number: H01L21/3125 ,  C08G77/62 ,  C09D183/02 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/76229

Abstract: PURPOSE: Methods for forming a silicon oxide layer pattern and an element isolation layer are provided to form the silicon oxide layer pattern on a pre-set position by preventing the rapid volume change of a spin-on-glass layer. CONSTITUTION: A spin-on-glass composition is applied on an object in order to form a spin-on-glass layer(S10). A pre-baking process is implemented with respect to the spin-on-glass layer(S20). A hardening process is implemented to the pre-baked spin-on-glass layer under a high pressure(S30). A main-baking process is implemented to the hardened spin-on-glass layer. A silicon oxide layer pattern is formed on the object(S40).

Abstract translation: 目的：提供用于形成氧化硅层图案和元件隔离层的方法，以通过防止旋涂玻璃层的快速体积变化在预设位置上形成氧化硅层图案。 构成：将旋涂玻璃组合物施加在物体上以形成旋涂玻璃层（S10）。 相对于旋涂玻璃层实施预烘焙处理（S20）。 在高压下对预烘焙旋涂玻璃层进行硬化处理（S30）。 对硬化的旋涂玻璃层进行主烘焙处理。 在物体上形成氧化硅层图案（S40）。

公开(公告)号：KR1020080088246A

公开(公告)日：2008-10-02

申请号：KR1020070030949

申请日：2007-03-29

Applicant: 삼성전자주식회사

Inventor： 배진혜 ,  이금주 ,  손현호 ,  황인석

IPC: H01L21/304

Abstract: A method for cleaning a semiconductor substrate is provided to enhance a yield and reliability in a manufacturing process by removing fully impurities without causing damage of a metal layer pattern. An impurity removal process is performed to remove residues of a first impurity on a semiconductor substrate including a metal layer pattern by using an organic or inorganic strip solution(S10). A removal process is performed to remove the residual organic or inorganic strip solution and residues of a second impurity on the semiconductor substrate by using a cleaning solution including nitrogen(S11). Megasonic energy is applied to the cleaning solution including the nitrogen. The cleaning solution is deionized water having density of nitrogen gas of 10 ppm to 20 ppm.

Abstract translation: 提供了一种用于清洁半导体衬底的方法，以通过完全去除杂质而不造成金属层图案的损坏来提高制造工艺中的成品率和可靠性。 通过使用有机或无机条状溶液，进行杂质去除处理以除去包括金属层图案的半导体衬底上的第一杂质残留物（S10）。 通过使用包含氮的清洗溶液，去除残留的有机或无机条状溶液和半导体衬底上的第二杂质的残留物（S11）。 将超声波能量施加到包括氮气的清洁溶液中。 清洗液是氮浓度为10ppm〜20ppm的去离子水。