Abstract:
본 발명은 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법에 관한 것으로, 더욱 상세하게는 반도체 채널층으로 소스/드레인 전극의 측면으로부터 기판에 수평한 방향으로 정렬된 나노와이어(nano wire)를 포함하는 박막 트랜지스터 및 그의 제조방법에 관계한다. 나노와이어, 에피텍셜 성장, 박막 트랜지스터
Abstract:
PURPOSE: A nanopiezoelectric generator and a method for manufacturing the same are provided to improve a piezoelectric effect by forming an insertion structure between a semiconductor piezoelectric material and an interlayer consisting of an insulating material. CONSTITUTION: At least one nanopiezoelectric part (140) is formed between a first electrode (120) and a second electrode (150). The nanopiezoelectric part consists of a semiconductor piezoelectric material. The nanopiezoelectric part has a nanostructure. An interlayer (130) is formed between the first electrode and the nanopiezoelectric part. The interlayer consists of an insulating material.
Abstract:
PURPOSE: A ZnSnO3/ZnO(zinc stannate/zinc oxide) nanowire in a core-shell structure is provided to have excellent piezoelectric characteristic by containing ZnSnO3 in a perovskite crystalline structure, and to apply a nano power-generating device to an environment-friendly field or within the human body. CONSTITUTION: A ZnSnO3/ZnO nanowire(500) includes a core-shell structure formed with a core(510) and a shell(520). The core contains ZnSnO3 and the shell contains ZnO. The ZnSnO3 has a perovskite crystalline structure, and the ZnO has a hexagonal crystalline structure. The ZnSnO3/ZnO nanowire is formed by a thermal chemical vapor deposition(thermal CVD) method. A producing method of the ZnSnO3/ZnO nanowire comprises the following steps: mixing ZnO powder, SnO powder, and carbon powder in a determined ratio; separately inserting the mixed powder and a substrate into a furnace; and heating the mixed powder for growing the ZnSnO3/ZnO nanowire on the substrate.
Abstract:
PURPOSE: A photoelectric device and a manufacturing method thereof are provided to increase a photo current generation amount and efficiency by forming a plurality of electrodes with a horizontal junction structure to be arranged in a horizontal direction. CONSTITUTION: A photoactive layer(20) is formed on a substrate(10) and includes graphene. An electrode structure is formed on the photoactive layer. The electrode structure includes a first electrode(30) and a second electrode(40) which are separated. The first electrode includes a first material doping the photoactive layer with holes. The second electrode includes a second material doping the photoactive layer with electrons.
Abstract:
PURPOSE: An electric energy generating device is provided to generate electric energy by converting light energy into electric energy and generating piezoelectric energy. CONSTITUTION: A semiconductor layer(120) is formed on a first substrate. A plurality of nano wires is formed on the semiconductor layer and has a piezoelectric characteristic. A second substrate(150) is separated from the first substrate. A first electrode(110) is formed under the second substrate and is electrically contacted with the nano wire. The interface of the semiconductor layer and the nano wire forms a pn junction.
Abstract:
PURPOSE: A composition for forming inorganic pattern is provided to form inorganic pattern of nano or micro scale with low cost. CONSTITUTION: A composition for forming inorganic pattern comprises inorganic precursor, stabilizing agent, and solvent. The stabilizing agent is one or more selected from β-diketone and β-keto ester. A method for producing reaction mixture solution (20) of inorganic precursor, stabilizing agent of inorganic precursor and solvent comprises: a step of patterning mixture solution by electrohydrodynamic lithography and a step of evaporating solvent to obtain inorganic pattern.