公开(公告)号：KR1020130103070A

公开(公告)日：2013-09-23

申请号：KR1020120024411

申请日：2012-03-09

Applicant: 삼성전자주식회사

Inventor： 한상헌 ,  신동익 ,  임진영 ,  현재성 ,  이정욱

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L2924/12041

Abstract: PURPOSE: A semiconductor light emitting device is provided to efficiently inject electrons and to prevent the quality degradation of a crystal by optimizing the structure of an electron injection layer through a superlattice structure and a thick film barrier layer. CONSTITUTION: An active layer (104) is arranged between an n-type semiconductor layer (102) and a p-type semiconductor layer (105). The active layer has a structure which is formed by alternately arranging a quantum well layer and a quantum barrier layer one or more times. An electron injection layer (103) is arranged between the active layer and the n-type semiconductor layer. The electron injection layer includes a superlattice structure and a thick film barrier layer which is formed between the superlattice structure and the active layer. The superlattice structure has a structure which is formed by alternately arranging a superlattice well layer and a superlattice barrier layer one or more times.

Abstract translation: 目的：提供半导体发光器件，以通过超晶格结构和厚膜阻挡层优化电子注入层的结构来有效地注入电子并防止晶体的质量劣化。 构成：在n型半导体层（102）和p型半导体层（105）之间配置有源层（104）。 有源层具有通过交替地将量子阱层和量子势垒层交替排列而形成的结构。 在有源层和n型半导体层之间配置有电子注入层（103）。 电子注入层包括超晶格结构和形成在超晶格结构和有源层之间的厚膜阻挡层。 超晶格结构具有通过交替地布置超晶格阱层和超晶格势垒层而形成的结构一次或多次。

公开(公告)号：KR1020130101297A

公开(公告)日：2013-09-13

申请号：KR1020120022325

申请日：2012-03-05

Applicant: 삼성전자주식회사

Inventor： 심현욱 ,  신동익 ,  김남성 ,  김영선

IPC: H01L33/20

CPC classification number: H01L33/12 ,  H01L33/02 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: PURPOSE: A semiconductor light emitting device is provided to improve luminous efficiency by reducing a stress between a semiconductor layer and a substrate. CONSTITUTION: A substrate (10) includes a through hole (11) and a conductive nanowire (12). The through hole is formed in a thickness direction. At least part of the through hole is filled with the conductive nanowire. A light emitting structure (20) is formed on the substrate. The light emitting structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

Abstract translation: 目的：提供半导体发光器件，通过减小半导体层和衬底之间的应力来提高发光效率。 构成：衬底（10）包括通孔（11）和导电纳米线（12）。 通孔形成在厚度方向上。 通孔的至少一部分填充有导电纳米线。 在基板上形成发光结构（20）。 发光结构包括第一导电型半导体层，有源层和第二导电类型半导体层。

公开(公告)号：KR1020150086689A

公开(公告)日：2015-07-29

申请号：KR1020140006666

申请日：2014-01-20

Applicant: 삼성전자주식회사

Inventor： 사공탄 ,  김병균 ,  신동익 ,  임진영 ,  김영선 ,  윤석호

IPC: H01L33/20 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/10

Abstract: 본발명은반도체발광소자에관한것으로서, 기판상에형성되며내부에결함영역을갖는하부반도체층; 상기하부반도체층상에서상기결함영역과대응되는영역에배치되는캐비티; 상기하부반도체층의적어도일 영역및 상기캐비티를덮도록배치되는캡핑층; 및상기캡핑층상에배치되며, 제1 도전형반도체층, 활성층및 제2 도전형반도체층을포함하는발광구조물;을포함하여, 발광구조물에형성된격자결함이감소되어발광효율이향상되는효과가있다.

Abstract translation: 本发明涉及一种发光装置。 它包括形成在衬底上并具有缺陷区的下半导体层; 空腔，其布置在与所述下半导体层上的所述缺陷区域对应的区域中; 封盖层，其覆盖所述空腔和所述下半导体层的至少一个区域; 以及布置在覆盖层上并包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 通过减少形成发光结构的晶格缺陷可以提高发光效率。

公开(公告)号：KR1020140102880A

公开(公告)日：2014-08-25

申请号：KR1020130016314

申请日：2013-02-15

Applicant: 삼성전자주식회사

Inventor： 한상헌 ,  김남성 ,  김동준 ,  사공탄 ,  신동익 ,  이도영 ,  이정욱

IPC: H01L21/205 ,  H01L33/00

CPC classification number: H01L33/007 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67326 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/32

Abstract: Provided is a method of manufacturing a semiconductor light emitting device which includes a step of forming a light emitting laminate by successively growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate. The step of forming a light emitting laminate includes a first growth process which uses a first susceptor having the mounting surface of a first curvature, a second growth process which uses a second susceptor having the mounting surface of a second curvature which is different from the first curvature, and a transfer process which transfers the substrate from the first susceptor to the second susceptor between the first and the second growth process.

Abstract translation: 提供一种制造半导体发光器件的方法，其包括通过在衬底上连续生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光层叠体的步骤。 形成发光层叠体的步骤包括使用具有第一曲率的安装表面的第一基座的第一生长工艺，使用第二基座的第二生长工艺，所述第二基座具有与第一曲率不同的第二曲率的安装表面 曲率以及在第一和第二生长过程之间将衬底从第一感受器传送到第二感受器的转移过程。

公开(公告)号：KR1020130005495A

公开(公告)日：2013-01-16

申请号：KR1020110066925

申请日：2011-07-06

Applicant: 삼성전자주식회사

Inventor： 심현욱 ,  이동주 ,  신동익 ,  김영선 ,  천주영 ,  손유리

IPC: H01L33/36

CPC classification number: H01L33/025 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

Abstract: PURPOSE: A nitride semiconductor light emitting diode is provided to improve the crystallization of a contact layer by inserting at least one doped p-type nitride film having low concentration on a contact layer. CONSTITUTION: A light emitting structure includes a p-type nitride semiconductor layer(16) and an n-type nitride semiconductor layer(14). The light emitting structure includes an active layer(15) formed between the semiconductor layers. A p-type electrode is electrically connected to the p-type nitride semiconductor layer. An n-type electrode is electrically connected to the n-type nitride semiconductor layer. A contact layer(17) is positioned between the p-type nitride semiconductor layer and the p-type electrode.

Abstract translation: 目的：提供氮化物半导体发光二极管，以通过在接触层上插入至少一种具有低浓度的掺杂p型氮化物膜来改善接触层的结晶。 构成：发光结构包括p型氮化物半导体层（16）和n型氮化物半导体层（14）。 发光结构包括形成在半导体层之间的有源层（15）。 p型电极与p型氮化物半导体层电连接。 n型电极与n型氮化物半导体层电连接。 接触层（17）位于p型氮化物半导体层和p型电极之间。

公开(公告)号：KR1020130066870A

公开(公告)日：2013-06-21

申请号：KR1020110133592

申请日：2011-12-13

Applicant: 삼성전자주식회사

Inventor： 김남성 ,  신동익 ,  심현욱 ,  김동준 ,  김영선 ,  양정승

IPC: H01L33/14

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: PURPOSE: A semiconductor light emitting device is provided to improve doping efficiency by blocking a p-type dopant diffused to an active layer. CONSTITUTION: An active layer(103) is arranged between n-type and p-type semiconductor layers. The active layer alternatively arranges a quantum-well layer and a quantum barrier layer one or more times. An electron blocking layer(105) is arranged between the active layer and the p-type semiconductor layer. A capping layer(104) is arranged between the active layer and the electron blocking layer. The capping layer prevents p-type dopant elements from being injected into the active layer.

Abstract translation: 目的：提供半导体发光器件以通过阻挡扩散到有源层的p型掺杂剂来提高掺杂效率。 构成：在n型和p型半导体层之间配置有源层（103）。 有源层交替地将量子阱层和量子势垒层布置一次或多次。 在有源层和p型半导体层之间设置电子阻挡层（105）。 覆盖层（104）布置在有源层和电子阻挡层之间。 封盖层防止将p型掺杂剂元素注入到有源层中。

公开(公告)号：KR1020120128961A

公开(公告)日：2012-11-28

申请号：KR1020110046932

申请日：2011-05-18

Applicant: 삼성전자주식회사

Inventor： 신영철 ,  김태훈 ,  심현욱 ,  신동익

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/32

Abstract: PURPOSE: A semiconductor light emitting device and a method for manufacturing the same are provided to improve optical power by forming a concavo-convex structure in the interface of a semiconductor layer. CONSTITUTION: A concavo-convex structure(30) is on a substrate. The material of the concavo-convex structure is different from that of the substrate. The concavo-convex structure includes a recess part(30a) and a protrusion part(30b). The recess part surrounds the protrusion part. A light emitting structure(20) is formed on the concavo-convex structure. The light emitting structure comprises a first conductivity type semiconductor layer(21), an active layer(22), and a second conductive semiconductor layer(23).

Abstract translation: 目的：提供半导体发光器件及其制造方法，以通过在半导体层的界面中形成凹凸结构来提高光功率。 构成：凹凸结构（30）在基板上。 凹凸结构的材料与基板的材料不同。 凹凸结构包括凹部（30a）和突出部（30b）。 凹部包围突起部。 在凹凸结构上形成发光结构（20）。 发光结构包括第一导电类型半导体层（21），有源层（22）和第二导电半导体层（23）。