公开(公告)号：KR1020140020135A

公开(公告)日：2014-02-18

申请号：KR1020120086852

申请日：2012-08-08

Applicant: 삼성전자주식회사

Inventor： 박원호 ,  권혁기 ,  김민섭 ,  김민수 ,  김병호 ,  김의열 ,  박상훈 ,  박지훈 ,  성민지 ,  심효성 ,  전창민 ,  전희석

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/3431 ,  G11C16/3427

Abstract: A method of preventing program disturbances comprises: classifying a first non-selected memory cells which shares a first selected line with a selected memory cell and a second non-selected memory cells which does not share the first selected line with the selected memory cell when the selected memory cell to be programmed is determined among the memory cells; and applying a negative voltage to a second selected lines connected to the second non-selected memory cells when programming the selected memory cells by applying a positive voltage to the fist selected line which is connected to the selected memory cell. [Reference numerals] (AA) Start; (BB) End; (S120) Classifying a first non-selected memory cells which shares a first selected line with a selected memory cell and a second non-selected memory cells which does not share the first selected line with the selected memory cell; (S140) Applying a negative voltage to a second selected lines connected to the second non-selected memory cells when programming the selected memory cells by applying a positive voltage to the fist selected line which is connected to the selected memory cell

Abstract translation: 一种防止程序干扰的方法包括：当所选择的存储器单元共享第一选定行的第一未选择存储器单元和不与所选存储单元共享第一选定行的第二未选择存储单元时，将其分类为 在存储器单元之间确定要编程的选择存储单元; 以及当对连接到所选择的存储单元的第一选定线施加正电压来对所选择的存储单元进行编程时，向连接到第二未选择存储单元的第二选定线施加负电压。 （附图标记）（AA）开始; （BB）结束; （S120）对与所选择的存储器单元共享第一选定行的第一非选择存储器单元和不与所选存储单元共享第一选定行的第二未选择存储单元进行分类; （S140）通过对连接到所选择的存储单元的第一选定线施加正电压来对所选择的存储单元进行编程时，向连接到第二未选择存储单元的第二选定线施加负电压