-
公开(公告)号：KR1020080075728A
公开(公告)日：2008-08-19
申请号：KR1020070015023
申请日：2007-02-13
Applicant: 삼성전자주식회사
IPC: H01L21/31 , H01L21/3213
CPC classification number: H01L21/76816 , H01L21/02041 , H01L21/76831 , H01L21/76837
Abstract: A method of forming a semiconductor device having a low dielectric material is provided to decrease an RC-delay in a high integrity semiconductor device by forming a protective film for preventing a change of a dielectric constant of a low dielectric constant material. An insulation film is formed on a semiconductor substrate(100). A photoresist pattern is formed on the insulation film. The insulation film is patterned by using the photo photoresist pattern as a mask, such that a groove(109) is formed to penetrate the insulation film. After the groove is formed, a carbon-based protection film is formed on an upper surface of the photo photoresist pattern, a bottom surface of the groove, and a sidewall of the groove. A protective film pattern(112) is formed on the sidewall of the groove by etching the protective film.
Abstract translation: 提供一种形成具有低电介质材料的半导体器件的方法，通过形成用于防止低介电常数材料的介电常数变化的保护膜来降低高完整性半导体器件中的RC延迟。 在半导体衬底（100）上形成绝缘膜。 在绝缘膜上形成光刻胶图形。 通过使用光致抗蚀剂图案作为掩模来对绝缘膜进行图案化，使得形成凹槽（109）以穿透绝缘膜。 在形成凹槽之后，在光致抗蚀剂图案的上表面，凹槽的底表面和凹槽的侧壁上形成碳基保护膜。 通过蚀刻保护膜，在凹槽的侧壁上形成保护膜图案（112）。
-
公开(公告)号：KR1020070049380A
公开(公告)日：2007-05-11
申请号：KR1020050106486
申请日：2005-11-08
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: 하드 마스크막 패턴 형성 방법에서, 대상물 상에 다이아몬드상 탄소막을 형성한다. 상기 다이아몬드상 탄소막 상에 포토레지스트막을 형성한다. 상기 포토레지스트막에 포토리소그래피 공정을 수행하여 포토레지스트막 패턴을 형성한다. 상기 다이아몬드상 탄소막에 상기 포토레지스트막 패턴을 식각 마스크막 패턴으로 사용하는 식각 공정을 수행하여 다이아몬드상 탄소막 패턴을 형성한다. 따라서 하드 마스크막 패턴의 투명도를 증가시켜 얼라인 공정의 마진을 증가시킬 수 있다. 또한, 하드 마스크막 패턴의 식각 내구성을 증가시키며 식각 부산물의 발생을 최소화 할 수 있다. 이와 더불어 하드 마스크막 패턴이 후속하여 완전히 제거되지 않더라도 전기적 단락을 발생시키지 않을 수 있다.
-
公开(公告)号：KR100781542B1
公开(公告)日：2007-12-03
申请号：KR1020060051383
申请日：2006-06-08
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0337 , H01L21/0276
Abstract: A method for forming fine patterns of semiconductor devices is provided to develop easily high performance semiconductor devices by forming stably fine patterns without exchanging exposure equipment. A first mask pattern for exposing selectively a lower material film is formed(S110). An intermediate material film pattern is formed on overall surfaces of the first mask pattern and the exposed lower material film(S120). A mask layer covers an upper surface of the intermediate material film pattern. By thinning a surface portion of the mask layer, a second mask pattern, which the upper surface of the intermediate material film pattern is partially exposed, is formed(S130). The exposed intermediate material film pattern is removed until a surface of a lower material film, thereby exposing the first mask pattern(S140). Patterning is performed on the lower material film by using the first and second mask patterns as a patterning mask(S150). Then, the first and second mask patterns are removed(S160).
Abstract translation: 提供一种用于形成精细图案的半导体器件的方法，以通过在不交换曝光设备的情况下形成稳定的精细图案来开发容易的高性能半导体器件。 形成用于选择性地曝光下部材料膜的第一掩模图案（S110）。 在第一掩模图案和暴露的下部材料膜的整个表面上形成中间材料膜图案（S120）。 掩模层覆盖中间材料膜图案的上表面。 通过使掩模层的表面部分变薄，形成中间材料膜图案的上表面部分露出的第二掩模图案（S130）。 去除暴露的中间材料膜图案直到下部材料膜的表面，从而暴露第一掩模图案（S140）。 通过使用第一和第二掩模图案作为图案掩模，在下部材料膜上进行图案化（S150）。 然后，去除第一和第二掩模图案（S160）。
-
-
-
Search Results
4
records
(took 0.017 seconds)
